MURS260-E3/52T
  • Share:

Vishay General Semiconductor - Diodes Division MURS260-E3/52T

Manufacturer No:
MURS260-E3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260-E3/52T is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-performance applications requiring fast recovery times and high reliability. It is part of the MURS260 series, which is ideal for use in consumer, computer, and telecommunication systems. The device features a glass passivated pallet chip junction and is optimized for automated placement, making it suitable for high-volume manufacturing processes.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load) IFSM 35 A
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °C VF 1.45 V
Maximum Reverse Recovery Time trr 50 ns (typical), 75 ns (maximum) ns
Package - SMB (DO-214AA) -

Key Features

  • Glass Passivated Pallet Chip Junction: Ensures high reliability and durability.
  • Ultrafast Reverse Recovery Time: With a typical recovery time of 50 ns and a maximum of 75 ns, this diode is ideal for high-frequency applications.
  • Ideal for Automated Placement: Designed for surface-mount technology, making it suitable for automated manufacturing processes.
  • RoHS-Compliant: Meets the RoHS (Restriction of Hazardous Substances) standards, ensuring environmental compliance.
  • AEC-Q101 Qualified: Available in versions that meet the AEC-Q101 automotive qualification standard for reliability and performance in automotive applications.
  • Flammability Rating: The molding compound meets UL 94 V-0 flammability rating, ensuring safety in various applications.

Applications

The MURS260-E3/52T diode is versatile and can be used in a variety of applications, including:

  • Consumer Electronics: Suitable for use in power supplies, DC-DC converters, and other consumer electronic devices.
  • Computer Systems: Used in power management and rectification circuits within computer systems.
  • Telecommunication Systems: Ideal for use in telecommunication equipment due to its high reliability and fast recovery times.
  • Automotive Systems: AEC-Q101 qualified versions make it suitable for automotive applications requiring high reliability and performance.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260-E3/52T diode?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 2.0 A at a lead temperature of 125 °C.

  3. What is the typical reverse recovery time of the MURS260-E3/52T diode?

    The typical reverse recovery time is 50 ns, with a maximum of 75 ns.

  4. What is the operating junction and storage temperature range of this diode?

    The operating junction and storage temperature range is -65 to +175 °C.

  5. Is the MURS260-E3/52T diode RoHS-compliant?
  6. What package type does the MURS260-E3/52T diode use?
  7. What are the typical applications of the MURS260-E3/52T diode?
  8. Does the MURS260-E3/52T diode meet automotive qualification standards?
  9. What is the maximum forward surge current of the MURS260-E3/52T diode?
  10. What is the maximum instantaneous forward voltage of the MURS260-E3/52T diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.56
707

Please send RFQ , we will respond immediately.

Same Series
MURS260-E3/52T
MURS260-E3/52T
DIODE GEN PURP 600V 2A DO214AA
MURS240HE3_A/H
MURS240HE3_A/H
DIODE GEN PURP 400V 2A DO214AA
MURS240HE3_A/I
MURS240HE3_A/I
DIODE GEN PURP 400V 2A DO214AA
MURS260HE3_A/H
MURS260HE3_A/H
DIODE GEN PURP 600V 2A DO214AA

Similar Products

Part Number MURS260-E3/52T MURS260-E3/5BT MURS260-M3/52T MURS260HE3/52T MURS160-E3/52T MURS240-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 400 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A 1.25 V @ 1 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - 10pF @ 4V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SM15T36A-M3/9AT
SM15T36A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T24AHE3/9AT
SM15T24AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM15T68AHE3_A/H
SM15T68AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T7V5CAHE3_A/I
SM6T7V5CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
MBRD340TRR
MBRD340TRR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DPAK
BAS40-02V-V-G-08
BAS40-02V-V-G-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 120MA SOD523
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX84C51-G3-18
BZX84C51-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX384C6V8-G3-18
BZX384C6V8-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323