MURS260-E3/52T
  • Share:

Vishay General Semiconductor - Diodes Division MURS260-E3/52T

Manufacturer No:
MURS260-E3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260-E3/52T is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-performance applications requiring fast recovery times and high reliability. It is part of the MURS260 series, which is ideal for use in consumer, computer, and telecommunication systems. The device features a glass passivated pallet chip junction and is optimized for automated placement, making it suitable for high-volume manufacturing processes.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load) IFSM 35 A
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °C VF 1.45 V
Maximum Reverse Recovery Time trr 50 ns (typical), 75 ns (maximum) ns
Package - SMB (DO-214AA) -

Key Features

  • Glass Passivated Pallet Chip Junction: Ensures high reliability and durability.
  • Ultrafast Reverse Recovery Time: With a typical recovery time of 50 ns and a maximum of 75 ns, this diode is ideal for high-frequency applications.
  • Ideal for Automated Placement: Designed for surface-mount technology, making it suitable for automated manufacturing processes.
  • RoHS-Compliant: Meets the RoHS (Restriction of Hazardous Substances) standards, ensuring environmental compliance.
  • AEC-Q101 Qualified: Available in versions that meet the AEC-Q101 automotive qualification standard for reliability and performance in automotive applications.
  • Flammability Rating: The molding compound meets UL 94 V-0 flammability rating, ensuring safety in various applications.

Applications

The MURS260-E3/52T diode is versatile and can be used in a variety of applications, including:

  • Consumer Electronics: Suitable for use in power supplies, DC-DC converters, and other consumer electronic devices.
  • Computer Systems: Used in power management and rectification circuits within computer systems.
  • Telecommunication Systems: Ideal for use in telecommunication equipment due to its high reliability and fast recovery times.
  • Automotive Systems: AEC-Q101 qualified versions make it suitable for automotive applications requiring high reliability and performance.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260-E3/52T diode?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 2.0 A at a lead temperature of 125 °C.

  3. What is the typical reverse recovery time of the MURS260-E3/52T diode?

    The typical reverse recovery time is 50 ns, with a maximum of 75 ns.

  4. What is the operating junction and storage temperature range of this diode?

    The operating junction and storage temperature range is -65 to +175 °C.

  5. Is the MURS260-E3/52T diode RoHS-compliant?
  6. What package type does the MURS260-E3/52T diode use?
  7. What are the typical applications of the MURS260-E3/52T diode?
  8. Does the MURS260-E3/52T diode meet automotive qualification standards?
  9. What is the maximum forward surge current of the MURS260-E3/52T diode?
  10. What is the maximum instantaneous forward voltage of the MURS260-E3/52T diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.56
707

Please send RFQ , we will respond immediately.

Same Series
MURS260-E3/52T
MURS260-E3/52T
DIODE GEN PURP 600V 2A DO214AA
MURS240HE3_A/H
MURS240HE3_A/H
DIODE GEN PURP 400V 2A DO214AA
MURS240HE3_A/I
MURS240HE3_A/I
DIODE GEN PURP 400V 2A DO214AA
MURS260HE3_A/H
MURS260HE3_A/H
DIODE GEN PURP 600V 2A DO214AA

Similar Products

Part Number MURS260-E3/52T MURS260-E3/5BT MURS260-M3/52T MURS260HE3/52T MURS160-E3/52T MURS240-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 400 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A 1.25 V @ 1 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - 10pF @ 4V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T33CA-M3/52
SM6T33CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T220CA-E3/5B
SM6T220CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T12A-E3/9AT
SM15T12A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM6T39CAHE3/5B
SM6T39CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T68CAHM3/H
SM15T68CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
1N4004GPE-E3/54
1N4004GPE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
ZM4742A-GS18
ZM4742A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 1W DO213AB
BZX84B2V4-HE3-08
BZX84B2V4-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 300MW SOT23-3
BZX84C51-G3-18
BZX84C51-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3