MURS260-E3/52T
  • Share:

Vishay General Semiconductor - Diodes Division MURS260-E3/52T

Manufacturer No:
MURS260-E3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260-E3/52T is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-performance applications requiring fast recovery times and high reliability. It is part of the MURS260 series, which is ideal for use in consumer, computer, and telecommunication systems. The device features a glass passivated pallet chip junction and is optimized for automated placement, making it suitable for high-volume manufacturing processes.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load) IFSM 35 A
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °C VF 1.45 V
Maximum Reverse Recovery Time trr 50 ns (typical), 75 ns (maximum) ns
Package - SMB (DO-214AA) -

Key Features

  • Glass Passivated Pallet Chip Junction: Ensures high reliability and durability.
  • Ultrafast Reverse Recovery Time: With a typical recovery time of 50 ns and a maximum of 75 ns, this diode is ideal for high-frequency applications.
  • Ideal for Automated Placement: Designed for surface-mount technology, making it suitable for automated manufacturing processes.
  • RoHS-Compliant: Meets the RoHS (Restriction of Hazardous Substances) standards, ensuring environmental compliance.
  • AEC-Q101 Qualified: Available in versions that meet the AEC-Q101 automotive qualification standard for reliability and performance in automotive applications.
  • Flammability Rating: The molding compound meets UL 94 V-0 flammability rating, ensuring safety in various applications.

Applications

The MURS260-E3/52T diode is versatile and can be used in a variety of applications, including:

  • Consumer Electronics: Suitable for use in power supplies, DC-DC converters, and other consumer electronic devices.
  • Computer Systems: Used in power management and rectification circuits within computer systems.
  • Telecommunication Systems: Ideal for use in telecommunication equipment due to its high reliability and fast recovery times.
  • Automotive Systems: AEC-Q101 qualified versions make it suitable for automotive applications requiring high reliability and performance.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260-E3/52T diode?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 2.0 A at a lead temperature of 125 °C.

  3. What is the typical reverse recovery time of the MURS260-E3/52T diode?

    The typical reverse recovery time is 50 ns, with a maximum of 75 ns.

  4. What is the operating junction and storage temperature range of this diode?

    The operating junction and storage temperature range is -65 to +175 °C.

  5. Is the MURS260-E3/52T diode RoHS-compliant?
  6. What package type does the MURS260-E3/52T diode use?
  7. What are the typical applications of the MURS260-E3/52T diode?
  8. Does the MURS260-E3/52T diode meet automotive qualification standards?
  9. What is the maximum forward surge current of the MURS260-E3/52T diode?
  10. What is the maximum instantaneous forward voltage of the MURS260-E3/52T diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.56
707

Please send RFQ , we will respond immediately.

Same Series
MURS260-E3/52T
MURS260-E3/52T
DIODE GEN PURP 600V 2A DO214AA
MURS240HE3_A/H
MURS240HE3_A/H
DIODE GEN PURP 400V 2A DO214AA
MURS240HE3_A/I
MURS240HE3_A/I
DIODE GEN PURP 400V 2A DO214AA
MURS260HE3_A/H
MURS260HE3_A/H
DIODE GEN PURP 600V 2A DO214AA

Similar Products

Part Number MURS260-E3/52T MURS260-E3/5BT MURS260-M3/52T MURS260HE3/52T MURS160-E3/52T MURS240-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 400 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A 1.25 V @ 1 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - 10pF @ 4V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T24CA-M3/5B
SM6T24CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM6T150AHM3_A/I
SM6T150AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM15T30AHM3_A/I
SM15T30AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T10AHE3/5B
SM6T10AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T7V5CAHE3_A/I
SM6T7V5CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
BAT54-E3-18
BAT54-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAT54WS-G3-08
BAT54WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
MUR420-M3/54
MUR420-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
1N4937GPEHE3/91
1N4937GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84B3V3-HE3-08
BZX84B3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84B22-G3-18
BZX84B22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3