1N4007GPHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GPHE3/73

Manufacturer No:
1N4007GPHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GPHE3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various applications requiring reliable and efficient rectification. The 1N4007GPHE3/73 is known for its robust performance, low forward voltage drop, and high forward surge capability, making it suitable for a broad range of electrical and electronic systems.

Key Specifications

ParameterValueUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)1000V
Maximum RMS Voltage (VRMS)700V
Maximum DC Blocking Voltage (VDC)1000V
Maximum Average Forward Rectified Current (IF(AV))1.0A
Peak Forward Surge Current (IFSM) - 8.3 ms sine-wave30A
Peak Forward Surge Current (IFSM) - square wave, tp = 1 ms45A
Maximum Instantaneous Forward Voltage (VF) at 1 A1.1V
Maximum DC Reverse Current (IR) at rated DC blocking voltage5.0 μAμA
Operating Junction and Storage Temperature Range-50 to +150°C
PackageDO-204AL (DO-41), Axial
Mounting TypeThrough Hole
Junction Capacitance at 4 V, 1 MHz15 pFpF

Key Features

  • Low forward voltage drop of 1.1 V at 1 A, reducing power losses.
  • High forward surge capability, with peak forward surge current up to 45 A for a square wave with tp = 1 ms.
  • High maximum repetitive peak reverse voltage of 1000 V, ensuring robust protection against reverse voltage.
  • Low leakage current of 5.0 μA at rated DC blocking voltage.
  • Wide operating junction and storage temperature range from -50°C to +150°C.
  • RoHS-compliant and meets JESD 201 class 1A whisker test.

Applications

The 1N4007GPHE3/73 is suitable for various applications, including:

  • General-purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Automotive systems, such as power conversion for LED headlights and electronic control units (ECUs).
  • Industrial and consumer electronics requiring reliable rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007GPHE3/73?
    The maximum repetitive peak reverse voltage (VRRM) is 1000 V.
  2. What is the maximum average forward rectified current of this diode?
    The maximum average forward rectified current (IF(AV)) is 1.0 A.
  3. What is the peak forward surge current for an 8.3 ms sine-wave?
    The peak forward surge current (IFSM) for an 8.3 ms sine-wave is 30 A.
  4. What is the maximum instantaneous forward voltage at 1 A?
    The maximum instantaneous forward voltage (VF) at 1 A is 1.1 V.
  5. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is from -50°C to +150°C.
  6. Is the 1N4007GPHE3/73 RoHS-compliant?
    Yes, the 1N4007GPHE3/73 is RoHS-compliant.
  7. What is the package type of the 1N4007GPHE3/73?
    The package type is DO-204AL (DO-41), axial.
  8. What is the mounting type of this diode?
    The mounting type is through-hole.
  9. What is the junction capacitance at 4 V, 1 MHz?
    The junction capacitance at 4 V, 1 MHz is 15 pF.
  10. What are some common applications of the 1N4007GPHE3/73?
    Common applications include general-purpose rectification in power supplies, inverters, converters, and freewheeling diodes, as well as automotive and industrial electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
564

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/73
1N4001GP-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4005GP-E3/54
1N4005GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4003GP-E3/54
1N4003GP-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4001GPE-E3/54
1N4001GPE-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4005GPE-E3/54
1N4005GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4007GPE-E3/73
1N4007GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4005GPEHE3/73
1N4005GPEHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4001GPHE3/54
1N4001GPHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4001GPEHE3/91
1N4001GPEHE3/91
DIODE GEN PURP 50V 1A DO204AL
1N4007GP-E3/53
1N4007GP-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPE-E3/53
1N4007GPE-E3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007GPHE3/73 1N4007GPHM3/73 1N4006GPHE3/73 1N4007GP-E3/73 1N4007GPEHE3/73 1N4007GPHE3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs - 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB

Related Product By Brand

SM15T39A-E3/9AT
SM15T39A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T15A-E3/57T
SM15T15A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM6T15CAHM3_A/I
SM6T15CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T10CAHM3/H
SM6T10CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
BAT54S-HE3-08
BAT54S-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
MURB1620CTTRL
MURB1620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX384C5V1-HE3-08
BZX384C5V1-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 200MW SOD323
BZX84C4V7-E3-18
BZX84C4V7-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX84C27-G3-08
BZX84C27-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3