1N4007GPHM3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GPHM3/73

Manufacturer No:
1N4007GPHM3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GPHM3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001-1N4007 series, known for its high current capability and low-forward voltage drop. It is widely used in various applications requiring reliable and efficient rectification of power supplies, inverters, converters, and freewheeling diodes.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 1000 V
Maximum RMS Voltage VRMS 700 V
Maximum DC Blocking Voltage VDC 1000 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Forward Voltage @ IF = 1.0 A VF 1.1 V
Reverse Leakage Current @ Vr IR 5.0 μA @ 1000 V μA
Typical Junction Capacitance Cj 15 pF @ 4 V, 1 MHz pF
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C °C
Package DO-204AL (DO-41)
Mounting Type Through Hole

Key Features

  • High Current Capability and Low-Forward Voltage Drop: The 1N4007GPHM3/73 can handle high current with minimal voltage drop, making it efficient for power rectification.
  • Surge Overload Rating: It has a peak forward surge current rating of 30 A for 8.3 ms single half sine-wave, ensuring robustness against transient overloads.
  • Low Reverse Leakage Current: With a reverse leakage current of 5.0 μA at 1000 V, it minimizes power loss in reverse bias conditions.
  • Lead-Free Finish and RoHS Compliance: The diode is lead-free and RoHS compliant, making it suitable for modern electronic designs.
  • Wide Operating Temperature Range: It operates reliably over a temperature range of -50 to +150 °C, making it versatile for various environments.

Applications

  • General Purpose Rectification: Suitable for rectification in power supplies, inverters, converters, and freewheeling diodes.
  • Automotive Systems: Used in automotive applications such as power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Industrial and Consumer Electronics: Applicable in industrial and consumer electronics for polarity protection, signal switching, and voltage regulation.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007GPHM3/73?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4007GPHM3/73?

    The peak forward surge current rating is 30 A for an 8.3 ms single half sine-wave.

  4. What is the forward voltage drop at 1.0 A current?

    The forward voltage drop at 1.0 A current is 1.1 V.

  5. Is the 1N4007GPHM3/73 RoHS compliant?

    Yes, the diode is RoHS compliant and has a lead-free finish.

  6. What is the typical junction capacitance of this diode?

    The typical junction capacitance is 15 pF at 4 V and 1 MHz.

  7. What is the operating temperature range of the 1N4007GPHM3/73?

    The operating temperature range is -50 to +150 °C.

  8. What type of package does the 1N4007GPHM3/73 come in?

    The diode comes in a DO-204AL (DO-41) package.

  9. What are some common applications of the 1N4007GPHM3/73?

    Common applications include general purpose rectification, automotive systems, and industrial and consumer electronics.

  10. What is the reverse leakage current at the rated DC blocking voltage?

    The reverse leakage current is 5.0 μA at 1000 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Same Series
1N4005-E3/54
1N4005-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4002E-E3/54
1N4002E-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4005E-E3/54
1N4005E-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4006-E3/73
1N4006-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4003-E3/73
1N4003-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4005E-E3/73
1N4005E-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4004E-E3/73
1N4004E-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4001GP-M3/73
1N4001GP-M3/73
DIODE GEN PURP 50V 1A DO204AL
1N4003GP-M3/73
1N4003GP-M3/73
DIODE GEN PURP 200V 1A DO204AL
1N4004GP-M3/73
1N4004GP-M3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005E-E3/53
1N4005E-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4006-E3/53
1N4006-E3/53
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4007GPHM3/73 1N4007GP-M3/73 1N4007GPHE3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

SM6T39A-E3/52
SM6T39A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SMA6J5.0A-E3/61
SMA6J5.0A-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 13.4VC DO214AC
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAT85S-TAP
BAT85S-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
1N4007-E3/54
1N4007-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAT54WS-G3-08
BAT54WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
1N4937GPEHE3/91
1N4937GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BZX84B6V8-HE3-08
BZX84B6V8-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 300MW SOT23-3
BZX84C4V3-E3-08
BZX84C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX384C4V3-E3-08
BZX384C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 200MW SOD323
BZX384C13-HE3-18
BZX384C13-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 200MW SOD323
BZX84C36-G3-08
BZX84C36-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 300MW SOT23-3