1N4004GP-M3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GP-M3/73

Manufacturer No:
1N4004GP-M3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GP-M3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for use in various applications such as power supplies, inverters, converters, and freewheeling diodes. It is part of the 1N400x series, which is widely used for rectification in consumer and industrial electronics.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 400 V
Maximum RMS Voltage VRMS 280 V
Maximum DC Blocking Voltage VDC 400 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C
Package DO-41 (DO-204AL)

Key Features

  • High surge current capability.
  • Low forward voltage drop (VF = 1.1 V at IF = 1 A).
  • High reverse voltage rating (VRRM = 400 V).
  • Low reverse leakage current (IR = 5.0 μA at VDC = 400 V).
  • Standard recovery time, suitable for general-purpose applications.
  • Through-hole mounting in DO-41 (DO-204AL) package.
  • Wide operating junction and storage temperature range (-50°C to +150°C).

Applications

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes in consumer and industrial electronics.
  • Rectification in DC power supplies and switching circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GP-M3/73 diode?

    The maximum repetitive peak reverse voltage (VRRM) is 400 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the peak forward surge current rating for the 1N4004GP-M3/73?

    The peak forward surge current (IFSM) is 30 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of this diode?

    The maximum instantaneous forward voltage (VF) is 1.1 V at IF = 1 A.

  5. What is the operating junction and storage temperature range for this component?

    The operating junction and storage temperature range is -50°C to +150°C.

  6. In what package is the 1N4004GP-M3/73 diode available?

    The diode is available in the DO-41 (DO-204AL) package.

  7. What are some common applications for the 1N4004GP-M3/73 diode?

    Common applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diodes in consumer and industrial electronics.

  8. What is the reverse recovery time of the 1N4004GP-M3/73 diode?

    The typical reverse recovery time (trr) is 2.0 μs.

  9. How much is the maximum DC reverse current at the rated DC blocking voltage?

    The maximum DC reverse current (IR) is 5.0 μA at VDC = 400 V.

  10. What is the thermal resistance of the 1N4004GP-M3/73 diode?

    The typical thermal resistance (RθJA) is 55 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
245

Please send RFQ , we will respond immediately.

Same Series
1N4003E-E3/73
1N4003E-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4002-E3/54
1N4002-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4006-E3/73
1N4006-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4003-E3/73
1N4003-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4007-E3/73
1N4007-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4005-E3/73
1N4005-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4005E-E3/73
1N4005E-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4003-E3/53
1N4003-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4003GP-M3/73
1N4003GP-M3/73
DIODE GEN PURP 200V 1A DO204AL
1N4004GP-M3/73
1N4004GP-M3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005E-E3/53
1N4005E-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GP-M3/73
1N4007GP-M3/73
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4004GP-M3/73 1N4004GPE-M3/73 1N4004GPHM3/73 1N4005GP-M3/73 1N4002GP-M3/73 1N4003GP-M3/73 1N4004GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA

Related Product By Brand

SM6T15A-M3/5B
SM6T15A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T33CAHM3_A/H
SM15T33CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM6T150AHM3/I
SM6T150AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
BAV99-HE3-08
BAV99-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 150MA SOT23
BAV70-E3-18
BAV70-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 125MA SOT23
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
LL4150-M-08
LL4150-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 600MA SOD80
BAT54WS-G3-08
BAT54WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BZX384C3V3-HE3-08
BZX384C3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX84C30-E3-18
BZX84C30-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84C8V2-HE3-18
BZX84C8V2-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3