1N4004GPE-M3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPE-M3/73

Manufacturer No:
1N4004GPE-M3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPE-M3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various applications requiring reliable and efficient rectification. The 1N4004GPE-M3/73 is housed in a DO-204AL (DO-41) package and is known for its robust performance and durability.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 400 V
Maximum RMS Voltage (VRMS) 280 V
Maximum DC Blocking Voltage (VDC) 400 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A (8.3 ms single half sine-wave) A
Maximum Instantaneous Forward Voltage (VF) @ IF = 1 A 1.1 V
Maximum DC Reverse Current (IR) @ VR = 400 V 5.0 μA μA
Operating Junction and Storage Temperature Range -50 to +150 °C °C
Package DO-204AL (DO-41), Axial
Mounting Type Through Hole
Junction Capacitance @ VR = 4 V, f = 1 MHz 15 pF pF

Key Features

  • High Voltage Capability: The 1N4004GPE-M3/73 can handle a maximum repetitive peak reverse voltage of 400 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 1.1 V at 1 A, this diode minimizes power losses during operation.
  • High Surge Current Capability: It can withstand a peak forward surge current of 30 A for 8.3 ms, ensuring reliability under transient conditions.
  • Broad Operating Temperature Range: The diode operates within a junction temperature range of -50 to +150 °C, making it versatile for various environmental conditions.
  • Compact Packaging: The DO-204AL (DO-41) package is compact and suitable for through-hole mounting, facilitating easy integration into various circuits.

Applications

The 1N4004GPE-M3/73 is designed for general-purpose rectification and is commonly used in:

  • Power supplies and DC power systems.
  • Inverters and converters.
  • Freewheeling diode applications.
  • Automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPE-M3/73?

    400 V.

  2. What is the maximum average forward rectified current of this diode?

    1.0 A.

  3. What is the maximum instantaneous forward voltage at 1 A?

    1.1 V.

  4. What is the operating junction temperature range of the 1N4004GPE-M3/73?

    -50 to +150 °C.

  5. What type of package does the 1N4004GPE-M3/73 come in?

    DO-204AL (DO-41), Axial.

  6. What is the typical junction capacitance of this diode?

    15 pF at 4 V, 1 MHz.

  7. Can the 1N4004GPE-M3/73 handle high surge currents?

    Yes, it can withstand a peak forward surge current of 30 A for 8.3 ms.

  8. What are common applications for the 1N4004GPE-M3/73?

    Power supplies, inverters, converters, and freewheeling diode applications.

  9. Is the 1N4004GPE-M3/73 suitable for high-voltage applications?

    Yes, it is designed to handle high voltages up to 400 V.

  10. What is the mounting type of the 1N4004GPE-M3/73?

    Through Hole.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
582

Please send RFQ , we will respond immediately.

Same Series
1N4007E-E3/73
1N4007E-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4004-E3/54
1N4004-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4006-E3/54
1N4006-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4004-E3/53
1N4004-E3/53
DIODE GEN PURP 400V 1A DO204AL
1N4004-E3/73
1N4004-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4003-E3/73
1N4003-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4007E-E3/53
1N4007E-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4002E-E3/73
1N4002E-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4003E-E3/53
1N4003E-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4004GPE-M3/73
1N4004GPE-M3/73
DIODE GEN PURP 400V 1A DO204AL
1N4004GP-M3/73
1N4004GP-M3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005E-E3/53
1N4005E-E3/53
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4004GPE-M3/73 1N4004GP-M3/73 1N4004GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL

Related Product By Brand

SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T22AHE3/9AT
SM15T22AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
MUR420-E3/73
MUR420-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
1N4007GPHE3/54
1N4007GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
1N4007GPHM3/54
1N4007GPHM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX384B75-E3-08
BZX384B75-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX84C47-E3-18
BZX84C47-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 47V 300MW SOT23-3
BZX84C62-E3-18
BZX84C62-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84B12-HE3-08
BZX84B12-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84B18-HE3-08
BZX84B18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84B7V5-G3-08
BZX84B7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3