1N4004GPE-M3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPE-M3/73

Manufacturer No:
1N4004GPE-M3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPE-M3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various applications requiring reliable and efficient rectification. The 1N4004GPE-M3/73 is housed in a DO-204AL (DO-41) package and is known for its robust performance and durability.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 400 V
Maximum RMS Voltage (VRMS) 280 V
Maximum DC Blocking Voltage (VDC) 400 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A (8.3 ms single half sine-wave) A
Maximum Instantaneous Forward Voltage (VF) @ IF = 1 A 1.1 V
Maximum DC Reverse Current (IR) @ VR = 400 V 5.0 μA μA
Operating Junction and Storage Temperature Range -50 to +150 °C °C
Package DO-204AL (DO-41), Axial
Mounting Type Through Hole
Junction Capacitance @ VR = 4 V, f = 1 MHz 15 pF pF

Key Features

  • High Voltage Capability: The 1N4004GPE-M3/73 can handle a maximum repetitive peak reverse voltage of 400 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 1.1 V at 1 A, this diode minimizes power losses during operation.
  • High Surge Current Capability: It can withstand a peak forward surge current of 30 A for 8.3 ms, ensuring reliability under transient conditions.
  • Broad Operating Temperature Range: The diode operates within a junction temperature range of -50 to +150 °C, making it versatile for various environmental conditions.
  • Compact Packaging: The DO-204AL (DO-41) package is compact and suitable for through-hole mounting, facilitating easy integration into various circuits.

Applications

The 1N4004GPE-M3/73 is designed for general-purpose rectification and is commonly used in:

  • Power supplies and DC power systems.
  • Inverters and converters.
  • Freewheeling diode applications.
  • Automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPE-M3/73?

    400 V.

  2. What is the maximum average forward rectified current of this diode?

    1.0 A.

  3. What is the maximum instantaneous forward voltage at 1 A?

    1.1 V.

  4. What is the operating junction temperature range of the 1N4004GPE-M3/73?

    -50 to +150 °C.

  5. What type of package does the 1N4004GPE-M3/73 come in?

    DO-204AL (DO-41), Axial.

  6. What is the typical junction capacitance of this diode?

    15 pF at 4 V, 1 MHz.

  7. Can the 1N4004GPE-M3/73 handle high surge currents?

    Yes, it can withstand a peak forward surge current of 30 A for 8.3 ms.

  8. What are common applications for the 1N4004GPE-M3/73?

    Power supplies, inverters, converters, and freewheeling diode applications.

  9. Is the 1N4004GPE-M3/73 suitable for high-voltage applications?

    Yes, it is designed to handle high voltages up to 400 V.

  10. What is the mounting type of the 1N4004GPE-M3/73?

    Through Hole.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
582

Please send RFQ , we will respond immediately.

Same Series
1N4001-E3/54
1N4001-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002-E3/53
1N4002-E3/53
DIODE GEN PURP 100V 1A DO204AL
1N4006-E3/54
1N4006-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4004-E3/73
1N4004-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4002E-E3/54
1N4002E-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003E-E3/54
1N4003E-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4005-E3/73
1N4005-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4005E-E3/73
1N4005E-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4006E-E3/73
1N4006E-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4002E-E3/53
1N4002E-E3/53
DIODE GEN PURP 100V 1A DO204AL
1N4003-E3/53
1N4003-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4005GP-M3/73
1N4005GP-M3/73
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4004GPE-M3/73 1N4004GP-M3/73 1N4004GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F

Related Product By Brand

SM6T15A-E3/52
SM6T15A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T150AHM3_A/H
SM6T150AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T33CAHE3/5B
SM6T33CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T18CAHM3/H
SM15T18CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BAT54C-HE3-08
BAT54C-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
MBRB2060CTHE3_B/P
MBRB2060CTHE3_B/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AB
BAT54-E3-08
BAT54-E3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAS86-M-08
BAS86-M-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX84C3V9-HE3-08
BZX84C3V9-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX84B2V7-E3-18
BZX84B2V7-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 300MW SOT23-3
BZX384C8V2-G3-18
BZX384C8V2-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 200MW SOD323