1N4004GPHM3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPHM3/73

Manufacturer No:
1N4004GPHM3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPHM3/73 is a general-purpose plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. Although this specific part is listed as obsolete and no longer manufactured, it belongs to the 1N400x series, which is widely used in various electrical applications. These diodes are known for their reliability and versatility in rectification tasks.

Key Specifications

ParameterSymbol1N4004Unit
Maximum Repetitive Peak Reverse VoltageVRRM400V
Maximum RMS VoltageVRMS280V
Maximum DC Blocking VoltageVDC400V
Maximum Average Forward Rectified CurrentIF(AV)1.0A
Peak Forward Surge Current (8.3 ms sine-wave)IFSM30A
Peak Forward Surge Current (square wave, tp = 1 ms)IFSM45A
Maximum Instantaneous Forward VoltageVF1.1V
Maximum DC Reverse Current at Rated DC Blocking VoltageIR5.0 μAμA
Operating Junction and Storage Temperature RangeTJ, TSTG-50 to +150°C
PackageDO-41 (DO-204AL)

Key Features

  • Low forward voltage drop of 1.1 V
  • Low leakage current of 5.0 μA
  • High forward surge capability
  • Solder dip 275 °C max. for 10 s, per JESD 22-B106
  • RoHS-compliant, commercial grade
  • Molded epoxy body with UL 94 V-0 flammability rating
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The 1N4004 diode is suitable for general-purpose rectification in power supplies, inverters, converters, and freewheeling diode applications. It is also used in various industrial, automotive, and consumer electronics where reliable and efficient rectification is required.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004 diode?
    The maximum repetitive peak reverse voltage of the 1N4004 diode is 400 V.
  2. What is the maximum average forward rectified current of the 1N4004 diode?
    The maximum average forward rectified current of the 1N4004 diode is 1.0 A.
  3. What is the peak forward surge current of the 1N4004 diode for an 8.3 ms sine-wave?
    The peak forward surge current of the 1N4004 diode for an 8.3 ms sine-wave is 30 A.
  4. What is the maximum instantaneous forward voltage of the 1N4004 diode?
    The maximum instantaneous forward voltage of the 1N4004 diode is 1.1 V.
  5. What is the operating junction and storage temperature range of the 1N4004 diode?
    The operating junction and storage temperature range of the 1N4004 diode is -50 to +150 °C.
  6. Is the 1N4004 diode RoHS-compliant?
    Yes, the 1N4004 diode is RoHS-compliant.
  7. What type of package does the 1N4004 diode come in?
    The 1N4004 diode comes in a DO-41 (DO-204AL) package.
  8. What are some typical applications of the 1N4004 diode?
    The 1N4004 diode is typically used in power supplies, inverters, converters, and freewheeling diode applications.
  9. What is the flammability rating of the 1N4004 diode's molded epoxy body?
    The molded epoxy body of the 1N4004 diode meets the UL 94 V-0 flammability rating.
  10. Is the 1N4004GPHM3/73 part still in production?
    No, the 1N4004GPHM3/73 part is listed as obsolete and no longer manufactured.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
41

Please send RFQ , we will respond immediately.

Same Series
1N4002-E3/53
1N4002-E3/53
DIODE GEN PURP 100V 1A DO204AL
1N4003-E3/54
1N4003-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4006-E3/54
1N4006-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4004-E3/73
1N4004-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4001-E3/73
1N4001-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4005-E3/73
1N4005-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4001E-E3/73
1N4001E-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002GP-M3/73
1N4002GP-M3/73
DIODE GEN PURP 100V 1A DO204AL
1N4003GP-M3/73
1N4003GP-M3/73
DIODE GEN PURP 200V 1A DO204AL
1N4005GPHM3/73
1N4005GPHM3/73
DIODE GEN PURP 600V 1A DO204AL
1N4005GP-M3/73
1N4005GP-M3/73
DIODE GEN PURP 600V 1A DO204AL
1N4007GP-M3/73
1N4007GP-M3/73
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4004GPHM3/73 1N4005GPHM3/73 1N4004GP-M3/73 1N4004GPHE3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM6T24CA-M3/5B
SM6T24CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM6T12AHE3_A/I
SM6T12AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T30AHE3_A/H
SM15T30AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM15T7V5AHE3_A/H
SM15T7V5AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BAT42W-G3-08
BAT42W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS86-M-08
BAS86-M-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MUR120/54
MUR120/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
BZX84B3V9-E3-08
BZX84B3V9-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX84B13-HE3-08
BZX84B13-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3
BZX384C75-G3-18
BZX384C75-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX84B7V5-G3-08
BZX84B7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3