1N4004GPHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPHE3/73

Manufacturer No:
1N4004GPHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPHE3/73 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is designed for use in power supplies, inverters, converters, and freewheeling diode applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 400 V
Maximum RMS Voltage VRMS 280 V
Maximum DC Blocking Voltage VDC 400 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ -50 to 150 °C
Package DO-204AL (DO-41)

Key Features

  • High Reverse Voltage Capability: The 1N4004GPHE3/73 can handle a maximum repetitive peak reverse voltage of 400 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 1.1 V at 1 A, this diode minimizes power loss during forward conduction.
  • High Surge Current Capability: The diode can withstand a peak forward surge current of 45 A for a short duration, ensuring robustness against transient conditions.
  • Wide Operating Temperature Range: It operates reliably over a temperature range of -50°C to 150°C, making it versatile for various environmental conditions.
  • RoHS Compliant: The 1N4004GPHE3/73 is RoHS compliant, ensuring it meets environmental regulations.

Applications

The 1N4004GPHE3/73 is designed for use in a variety of applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diode applications.
  • Automotive and industrial power systems.
  • Consumer electronics requiring reliable rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPHE3/73?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current capability of the 1N4004GPHE3/73?

    The diode can withstand a peak forward surge current of 45 A for a short duration.

  4. What is the operating temperature range of this diode?

    The operating temperature range is -50°C to 150°C.

  5. Is the 1N4004GPHE3/73 RoHS compliant?

    Yes, the 1N4004GPHE3/73 is RoHS compliant.

  6. What type of package does the 1N4004GPHE3/73 come in?

    The diode comes in a DO-204AL (DO-41) package.

  7. What are some common applications of the 1N4004GPHE3/73?

    Common applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diode applications.

  8. What is the maximum instantaneous forward voltage of this diode?

    The maximum instantaneous forward voltage is 1.1 V at 1 A.

  9. Can the 1N4004GPHE3/73 be used in automotive applications?

    Yes, it can be used in automotive and industrial power systems due to its robust specifications.

  10. What is the typical reverse recovery time of the 1N4004GPHE3/73?

    The typical reverse recovery time is 2.0 μs.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
522

Please send RFQ , we will respond immediately.

Same Series
1N4005GP-E3/54
1N4005GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4004GPE-E3/54
1N4004GPE-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N5404GP-E3/54
1N5404GP-E3/54
DIODE GEN PURP 400V 3A DO201AD
1N4001GPHE3/73
1N4001GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4003GPHE3/73
1N4003GPHE3/73
DIODE GEN PURP 200V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/73
1N4007GPHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4002GPHE3/54
1N4002GPHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4005GPEHE3/54
1N4005GPEHE3/54
DIODE GEN PURP 600V 1A DO204AL
1N4007GPHE3/54
1N4007GPHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4007GP-E3/53
1N4007GP-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/53
1N4007GPHE3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4004GPHE3/73 1N4005GPHE3/73 1N4004GPHM3/73 1N4003GPHE3/73 1N4004GP-E3/73 1N4004GPEHE3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 200 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs - 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SM6T12CA-M3/5B
SM6T12CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T33A-M3/9AT
SM15T33A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM6T220CAHE3/5B
SM6T220CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T6V8CAHM3_A/I
SM15T6V8CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
BAV23C-G3-08
BAV23C-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
LL4148-M-18
LL4148-M-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
BAS20-G3-08
BAS20-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
1N4740A-TR
1N4740A-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 1.3W DO41
BZX384B15-HE3-08
BZX384B15-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX84B4V7-G3-08
BZX84B4V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX84B6V2-G3-08
BZX84B6V2-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW SOT23-3
BZX384B3V0-G3-08
BZX384B3V0-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323