1N4004GPHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPHE3/73

Manufacturer No:
1N4004GPHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPHE3/73 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is designed for use in power supplies, inverters, converters, and freewheeling diode applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 400 V
Maximum RMS Voltage VRMS 280 V
Maximum DC Blocking Voltage VDC 400 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ -50 to 150 °C
Package DO-204AL (DO-41)

Key Features

  • High Reverse Voltage Capability: The 1N4004GPHE3/73 can handle a maximum repetitive peak reverse voltage of 400 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 1.1 V at 1 A, this diode minimizes power loss during forward conduction.
  • High Surge Current Capability: The diode can withstand a peak forward surge current of 45 A for a short duration, ensuring robustness against transient conditions.
  • Wide Operating Temperature Range: It operates reliably over a temperature range of -50°C to 150°C, making it versatile for various environmental conditions.
  • RoHS Compliant: The 1N4004GPHE3/73 is RoHS compliant, ensuring it meets environmental regulations.

Applications

The 1N4004GPHE3/73 is designed for use in a variety of applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diode applications.
  • Automotive and industrial power systems.
  • Consumer electronics requiring reliable rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPHE3/73?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current capability of the 1N4004GPHE3/73?

    The diode can withstand a peak forward surge current of 45 A for a short duration.

  4. What is the operating temperature range of this diode?

    The operating temperature range is -50°C to 150°C.

  5. Is the 1N4004GPHE3/73 RoHS compliant?

    Yes, the 1N4004GPHE3/73 is RoHS compliant.

  6. What type of package does the 1N4004GPHE3/73 come in?

    The diode comes in a DO-204AL (DO-41) package.

  7. What are some common applications of the 1N4004GPHE3/73?

    Common applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diode applications.

  8. What is the maximum instantaneous forward voltage of this diode?

    The maximum instantaneous forward voltage is 1.1 V at 1 A.

  9. Can the 1N4004GPHE3/73 be used in automotive applications?

    Yes, it can be used in automotive and industrial power systems due to its robust specifications.

  10. What is the typical reverse recovery time of the 1N4004GPHE3/73?

    The typical reverse recovery time is 2.0 μs.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
522

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/54
1N4001GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N5404GP-E3/54
1N5404GP-E3/54
DIODE GEN PURP 400V 3A DO201AD
1N5406GP-E3/54
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD
1N4001GPE-E3/73
1N4001GPE-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4001GPHE3/73
1N4001GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002GP-E3/73
1N4002GP-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4004GPEHE3/54
1N4004GPEHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4005GPEHE3/53
1N4005GPEHE3/53
DIODE GEN PURP 600V 1A DO204AL
1N5407GP-E3/73
1N5407GP-E3/73
DIODE GEN PURP 800V 3A DO201AD

Similar Products

Part Number 1N4004GPHE3/73 1N4005GPHE3/73 1N4004GPHM3/73 1N4003GPHE3/73 1N4004GP-E3/73 1N4004GPEHE3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 200 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs - 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

SM6T12A-M3/5B
SM6T12A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T12A-M3/57T
SM15T12A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T22AHM3_A/H
SM15T22AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T33AHE3/57T
SM15T33AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM6T18AHE3/52
SM6T18AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
STPS1045BTRL
STPS1045BTRL
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 10A DPAK
BZX84C4V3-E3-08
BZX84C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84C4V3-E3-18
BZX84C4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84B4V3-E3-18
BZX84B4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84B3V3-HE3-18
BZX84B3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX384C20-G3-18
BZX384C20-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 200MW SOD323
BZX84B4V3-G3-08
BZX84B4V3-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3