1N4001GPHE3/73
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Vishay General Semiconductor - Diodes Division 1N4001GPHE3/73

Manufacturer No:
1N4001GPHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPHE3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400xGP series, designed for use in various applications requiring rectification, such as power supplies, inverters, converters, and freewheeling diodes. The device is housed in a DO-41 (DO-204AL) package, which is a molded epoxy body meeting the UL 94 V-0 flammability rating. The terminals are matte tin plated and solderable according to J-STD-002 and JESD 22-B102 standards. This diode is RoHS-compliant and meets the JESD 201 class 1A whisker test.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 50 V
Maximum RMS Voltage VRMS 35 V
Maximum DC Blocking Voltage VDC 50 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C
Typical Junction Capacitance CJ 8.0 pF
Typical Thermal Resistance RθJA 55 °C/W

Key Features

  • General Purpose Rectification: Suitable for use in power supplies, inverters, converters, and freewheeling diode applications.
  • DO-41 Package: Molded epoxy body with UL 94 V-0 flammability rating.
  • RoHS Compliance: Meets RoHS standards and JESD 201 class 1A whisker test.
  • High Surge Current Capability: Can handle peak forward surge currents up to 45 A for 1 ms square waveform.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1 A.
  • Low Reverse Current: Maximum DC reverse current of 5.0 μA at rated DC blocking voltage.

Applications

  • Power Supplies: Used in rectification stages of power supplies.
  • Inverters and Converters: Suitable for use in inverter and converter circuits.
  • Freewheeling Diodes: Often used as freewheeling diodes to protect against back EMF.
  • Consumer Electronics: Found in various consumer electronic devices requiring rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4001GPHE3/73 diode?

    The maximum repetitive peak reverse voltage (VRRM) is 50 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the peak forward surge current capability of the 1N4001GPHE3/73?

    The peak forward surge current (IFSM) is 30 A for an 8.3 ms sine-wave and 45 A for a 1 ms square waveform.

  4. What is the maximum instantaneous forward voltage of this diode?

    The maximum instantaneous forward voltage (VF) is 1.1 V at 1 A.

  5. Is the 1N4001GPHE3/73 diode RoHS compliant?
  6. What is the operating junction and storage temperature range of this diode?

    The operating junction and storage temperature range is -50 to +150 °C.

  7. What is the typical junction capacitance of the 1N4001GPHE3/73 diode?

    The typical junction capacitance (CJ) is 8.0 pF at 4.0 V and 1 MHz.

  8. What is the typical thermal resistance of this diode?

    The typical thermal resistance (RθJA) is 55 °C/W.

  9. In what package is the 1N4001GPHE3/73 diode available?

    The diode is available in a DO-41 (DO-204AL) package.

  10. What are some common applications of the 1N4001GPHE3/73 diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number 1N4001GPHE3/73 1N4002GPHE3/73 1N4003GPHE3/73 1N4001GP-E3/73 1N4001GPEHE3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 100 V 200 V 50 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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