1N5406GP-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N5406GP-E3/54

Manufacturer No:
1N5406GP-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5406GP-E3/54 is a standard recovery rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed to handle high current and voltage requirements, making it suitable for various industrial and commercial applications. It is part of Vishay's extensive range of diodes and rectifiers, known for their reliability and performance in different market segments, including automotive, industrial, and consumer electronics.

Key Specifications

ParameterValue
Current Rating (Io)3 A
Peak Reverse Voltage (Vrrm)600 V
Forward Voltage Drop (Vf)1.2 V (typical at 3 A)
Reverse Recovery Time (trr)>500 ns
Package TypeTape & Reel (TR)
Operating Temperature Range-65°C to +150°C

Key Features

  • High current rating of 3 A, making it suitable for applications requiring substantial current handling.
  • Peak reverse voltage of 600 V, providing robust protection against reverse voltage spikes.
  • Standard recovery time, which is greater than 500 ns, suitable for general-purpose rectification applications.
  • Low forward voltage drop of 1.2 V at 3 A, minimizing power losses during operation.
  • Tape & Reel packaging for easy integration into automated assembly processes.

Applications

The 1N5406GP-E3/54 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Rectification circuits in industrial and commercial equipment.
  • Automotive systems requiring high reliability and performance.
  • Consumer electronics where robust rectification is necessary.

Q & A

  1. What is the current rating of the 1N5406GP-E3/54 diode?
    The current rating of the 1N5406GP-E3/54 diode is 3 A.
  2. What is the peak reverse voltage of the 1N5406GP-E3/54 diode?
    The peak reverse voltage of the 1N5406GP-E3/54 diode is 600 V.
  3. What is the typical forward voltage drop of the 1N5406GP-E3/54 diode?
    The typical forward voltage drop of the 1N5406GP-E3/54 diode is 1.2 V at 3 A.
  4. What is the recovery time of the 1N5406GP-E3/54 diode?
    The recovery time of the 1N5406GP-E3/54 diode is greater than 500 ns.
  5. What is the package type of the 1N5406GP-E3/54 diode?
    The package type of the 1N5406GP-E3/54 diode is Tape & Reel (TR).
  6. What is the operating temperature range of the 1N5406GP-E3/54 diode?
    The operating temperature range of the 1N5406GP-E3/54 diode is -65°C to +150°C.
  7. In which applications is the 1N5406GP-E3/54 diode commonly used?
    The 1N5406GP-E3/54 diode is commonly used in power supplies, DC-DC converters, industrial and commercial equipment, automotive systems, and consumer electronics.
  8. Why is the 1N5406GP-E3/54 diode suitable for high-current applications?
    The 1N5406GP-E3/54 diode is suitable for high-current applications due to its 3 A current rating and robust construction.
  9. How does the 1N5406GP-E3/54 diode protect against reverse voltage spikes?
    The 1N5406GP-E3/54 diode protects against reverse voltage spikes with its peak reverse voltage rating of 600 V.
  10. What are the benefits of using the 1N5406GP-E3/54 diode in automated assembly processes?
    The benefits include easy integration due to its Tape & Reel packaging, which is compatible with automated assembly systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:30pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

$0.83
601

Please send RFQ , we will respond immediately.

Same Series
1N4007GPE-E3/54
1N4007GPE-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4007GP-E3/54
1N4007GP-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPE-E3/54
1N4004GPE-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4003GPE-E3/54
1N4003GPE-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4007GPE-E3/73
1N4007GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N5406GP-E3/54
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4005GPEHE3/73
1N4005GPEHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4006GP-E3/73
1N4006GP-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4006GPHE3/54
1N4006GPHE3/54
DIODE GEN PURP 800V 1A DO204AL
1N4004GPE-E3/93
1N4004GPE-E3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/53
1N4007GPEHE3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N5406GP-E3/54 1N5407GP-E3/54 1N5408GP-E3/54 1N5404GP-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V 1000 V 400 V
Current - Average Rectified (Io) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 3 A 1.2 V @ 3 A 1.2 V @ 3 A 1.2 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 30pF @ 4V, 1MHz 30pF @ 4V, 1MHz 30pF @ 4V, 1MHz 30pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

SM6T33CA-M3/52
SM6T33CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T220CAHM3_A/I
SM6T220CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T100AHE3/57T
SM15T100AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
BYQ28E-200HE3/45
BYQ28E-200HE3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO220AB
MBR1545CT801HE3/45
MBR1545CT801HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
BAS16D-E3-08
BAS16D-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
MBR10100-E3/4W
MBR10100-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BZX84C3V3-HE3-18
BZX84C3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX384B15-E3-18
BZX384B15-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX384B27-E3-08
BZX384B27-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 200MW SOD323