1N4002GPHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPHE3/54

Manufacturer No:
1N4002GPHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPHE3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various applications requiring rectification of power supplies, inverters, converters, and freewheeling diodes. The 1N4002GPHE3/54 is specifically designed to handle a maximum repetitive peak reverse voltage (VRRM) of 100 V and a maximum average forward rectified current (IF(AV)) of 1.0 A. It is packaged in a DO-41 (DO-204AL) case, making it suitable for through-hole mounting.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS Voltage VRMS 70 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Typical Junction Capacitance CJ 15 pF pF
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C °C
Package DO-41 (DO-204AL)

Key Features

  • General Purpose Rectification: Suitable for use in power supplies, inverters, converters, and freewheeling diodes applications.
  • High Surge Current Capability: Can handle peak forward surge currents up to 30 A for 8.3 ms single half sine-wave.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1.0 A.
  • High Temperature Operation: Operating junction and storage temperature range from -50 °C to +150 °C.
  • RoHS Compliant: Meets RoHS standards, ensuring environmental compliance.
  • Flammability Rating: Molding compound meets UL 94 V-0 flammability rating.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Suitable for use in inverter and converter circuits where high reliability and efficiency are required.
  • Freewheeling Diodes: Often used as freewheeling diodes to protect against back EMF in inductive loads.
  • Automotive and Industrial Systems: Can be used in various automotive and industrial applications due to its robust specifications and reliability.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the 1N4002GPHE3/54 diode?

    The maximum repetitive peak reverse voltage (VRRM) is 100 V.

  2. What is the maximum average forward rectified current (IF(AV)) of this diode?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the peak forward surge current (IFSM) rating for this diode?

    The peak forward surge current (IFSM) is 30 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage (VF) of the 1N4002GPHE3/54 diode?

    The maximum instantaneous forward voltage (VF) is 1.1 V at 1.0 A.

  5. Is the 1N4002GPHE3/54 diode RoHS compliant?

    Yes, the 1N4002GPHE3/54 diode is RoHS compliant.

  6. What is the operating junction and storage temperature range for this diode?

    The operating junction and storage temperature range is from -50 °C to +150 °C.

  7. What type of package does the 1N4002GPHE3/54 diode come in?

    The diode comes in a DO-41 (DO-204AL) package.

  8. What are some common applications for the 1N4002GPHE3/54 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diodes in various systems.

  9. Does the 1N4002GPHE3/54 meet any specific flammability ratings?

    Yes, the molding compound meets the UL 94 V-0 flammability rating.

  10. What is the typical junction capacitance of the 1N4002GPHE3/54 diode?

    The typical junction capacitance is 15 pF at 4.0 V and 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
136

Please send RFQ , we will respond immediately.

Same Series
1N4005GP-E3/54
1N4005GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4002GP-E3/54
1N4002GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GPE-E3/54
1N4003GPE-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4003GP-E3/73
1N4003GP-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N5406GP-E3/54
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4004GPEHE3/54
1N4004GPEHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/53
1N4007GPEHE3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/53
1N4007GPHE3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPE-E3/91
1N4004GPE-E3/91
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number 1N4002GPHE3/54 1N4003GPHE3/54 1N4002GPHM3/54 1N4001GPHE3/54 1N4002GP-E3/54 1N4002GPEHE3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 100 V 50 V 100 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs - 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

SM6T18CAHE3_A/I
SM6T18CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T6V8CAHM3_A/H
SM6T6V8CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM6T39CAHE3/5B
SM6T39CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAT54C-BO-G3-18
BAT54C-BO-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHTKY DL 30V 200MA SOT23
BAS40-00-G3-18
BAS40-00-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 200MA SOT23
BAT54WS-G3-08
BAT54WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4004GPE-M3/73
1N4004GPE-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BZX384C4V3-E3-08
BZX384C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 200MW SOD323
BZX84C30-E3-18
BZX84C30-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX384C13-E3-18
BZX384C13-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 200MW SOD323