1N4001GPEHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GPEHE3/54

Manufacturer No:
1N4001GPEHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPEHE3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 through 1N4007 series, which are widely used in various applications requiring rectification of power supplies, inverters, converters, and freewheeling diodes. The 1N4001GP is specifically rated for a maximum repetitive peak reverse voltage of 50 V and a maximum average forward rectified current of 1 A, making it suitable for a range of electrical and electronic systems.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 50 V
Maximum RMS Voltage VRMS 35 V
Maximum DC Blocking Voltage VDC 50 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Typical Junction Capacitance CJ 8.0 pF
Package DO-41 (DO-204AL)
Operating Junction Temperature TJ -55 to 175 °C

Key Features

  • High Current Capability: The diode can handle a maximum average forward rectified current of 1 A and a peak forward surge current of 30 A for 8.3 ms.
  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.1 V, which is beneficial for reducing power losses.
  • Surge Overload Rating: It is capable of withstanding surge currents up to 30 A peak.
  • Lead Free Finish and RoHS Compliant: The diode is lead-free and compliant with RoHS standards, making it suitable for modern electronic designs.
  • Glass Passivated Die Construction: This construction enhances the diode's reliability and performance.
  • Molded Plastic Case with UL Flammability Classification 94V-0: Ensures safety and durability in various operating conditions.

Applications

  • General Purpose Rectification: Suitable for rectification in power supplies, inverters, and converters.
  • Freewheeling Diodes: Often used in applications requiring freewheeling diodes to protect against back EMF.
  • Consumer Electronics: Used in various consumer electronic devices that require reliable rectification.
  • Industrial and Automotive Systems: Due to its robust specifications, it is also used in industrial and automotive applications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4001GP diode?

    The maximum repetitive peak reverse voltage is 50 V.

  2. What is the maximum average forward rectified current of the 1N4001GP diode?

    The maximum average forward rectified current is 1 A.

  3. What is the peak forward surge current rating of the 1N4001GP diode?

    The peak forward surge current rating is 30 A for 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of the 1N4001GP diode?

    The maximum instantaneous forward voltage is 1.1 V.

  5. Is the 1N4001GP diode RoHS compliant?
  6. What is the operating junction temperature range of the 1N4001GP diode?

    The operating junction temperature range is -55 to 175 °C.

  7. What type of package does the 1N4001GP diode come in?

    The diode comes in a DO-41 (DO-204AL) package.

  8. What are some common applications of the 1N4001GP diode?

    Common applications include general purpose rectification, freewheeling diodes, consumer electronics, and industrial and automotive systems.

  9. What is the typical junction capacitance of the 1N4001GP diode?

    The typical junction capacitance is 8.0 pF at 4.0 V and 1 MHz.

  10. Does the 1N4001GP diode meet any specific flammability standards?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
49

Please send RFQ , we will respond immediately.

Same Series
1N4005GP-E3/54
1N4005GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4004GP-E3/54
1N4004GP-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4002GP-E3/54
1N4002GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4007GP-E3/73
1N4007GP-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4002GP-E3/73
1N4002GP-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4005GPEHE3/73
1N4005GPEHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4004GPEHE3/54
1N4004GPEHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/54
1N4007GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4002GPEHE3/91
1N4002GPEHE3/91
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GPHE3/53
1N4007GPHE3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPE-E3/91
1N4004GPE-E3/91
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number 1N4001GPEHE3/54 1N4002GPEHE3/54 1N4001GPHE3/54 1N4001GPE-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 100 V 50 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM6T24CA-E3/52
SM6T24CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM6T100A-E3/52
SM6T100A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM6T200CA-M3/52
SM6T200CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AA
SM6T30CAHM3_A/H
SM6T30CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T22AHM3_A/H
SM15T22AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T22CA-E3/9AT
SM15T22CA-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T22AHE3/9AT
SM15T22AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T12AHE3_A/H
SM15T12AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
MBR1545CT/45
MBR1545CT/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO220AB
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BZX84C39-HE3-08
BZX84C39-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX384B3V0-G3-08
BZX384B3V0-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323