BAT54-E3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAT54-E3-18

Manufacturer No:
BAT54-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54C-E3-18, produced by Vishay General Semiconductor - Diodes Division, is a small signal Schottky diode array designed for a variety of applications requiring low forward voltage drop and fast switching times. This component is part of the BAT54 series, which includes single and dual diodes in different configurations. The BAT54C-E3-18 specifically features a common cathode configuration, making it suitable for applications where high efficiency and low power loss are critical.

Key Specifications

Parameter Test Condition Symbol Value Unit
Repetitive Peak Reverse Voltage - VRRM 30 V
Forward Continuous Current - IF 200 mA
Repetitive Peak Forward Current - IFRM 300 mA
Surge Forward Current (tp < 1 s) - IFSM 600 mA
Power Dissipation - Ptot 150 mW
Thermal Resistance Junction to Ambient Air - RthJA 650 K/W
Maximum Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C
Operating Temperature Range - Top -55 to +125 °C
Reverse Breakdown Voltage Tested with 100 μA pulses V(BR) 30 V
Leakage Current VR = 25 V IR 2 μA
Forward Voltage IF = 0.1 mA Vf 240 mV
Forward Voltage IF = 1 mA Vf 320 mV
Forward Voltage IF = 10 mA Vf 400 mV
Forward Voltage IF = 100 mA Vf 800 mV
Diode Capacitance VR = 1 V, f = 1 MHz CD 10 pF
Reverse Recovery Time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5 ns

Key Features

  • Low Forward Voltage Drop: The BAT54C-E3-18 features very low forward voltage drop, typically 240 mV at 0.1 mA, which makes it highly efficient in applications requiring minimal power loss.
  • Fast Switching Times: With a reverse recovery time of 5 ns, this diode is suitable for high-frequency applications where fast switching is critical.
  • Common Cathode Configuration: The BAT54C-E3-18 is configured as a common cathode diode array, making it ideal for applications that require this specific configuration.
  • AEC-Q101 Qualified and RoHS Compliant: This diode is qualified to the AEC-Q101 standard and is RoHS compliant, ensuring it meets stringent automotive and environmental standards.
  • PN Junction Guard Ring Protection: The diode is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
  • Compact SOT-23 Package: The component is packaged in a compact SOT-23-3 package, which is suitable for surface mount applications and saves space on the PCB.

Applications

  • Automotive Systems: The BAT54C-E3-18 is widely used in automotive systems, including power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
  • Consumer Electronics: It is used in various consumer electronics such as smartphones, tablets, and other portable devices where low power consumption and high efficiency are required.
  • Telecommunications Equipment: The diode is suitable for telecommunications equipment due to its fast switching times and low forward voltage drop.
  • Computing and Industrial Applications: It is also used in computing devices and industrial applications where reliable and efficient power management is necessary.

Q & A

  1. What is the repetitive peak reverse voltage of the BAT54C-E3-18?

    The repetitive peak reverse voltage (VRRM) is 30 V.

  2. What is the forward continuous current rating of the BAT54C-E3-18?

    The forward continuous current (IF) is 200 mA.

  3. What is the typical forward voltage drop at 0.1 mA for the BAT54C-E3-18?

    The typical forward voltage drop at 0.1 mA is 240 mV.

  4. Is the BAT54C-E3-18 AEC-Q101 qualified?
  5. What is the reverse recovery time of the BAT54C-E3-18?

    The reverse recovery time (trr) is 5 ns.

  6. What is the maximum junction temperature for the BAT54C-E3-18?

    The maximum junction temperature (Tj) is 125°C.

  7. What is the storage temperature range for the BAT54C-E3-18?

    The storage temperature range (Tstg) is -65°C to +150°C.

  8. What is the operating temperature range for the BAT54C-E3-18?

    The operating temperature range (Top) is -55°C to +125°C.

  9. What type of package does the BAT54C-E3-18 use?

    The BAT54C-E3-18 is packaged in a SOT-23-3 surface mount package.

  10. Is the BAT54C-E3-18 RoHS compliant?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.29
3,258

Please send RFQ , we will respond immediately.

Same Series
BAT54A-E3-18
BAT54A-E3-18
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54A-E3-08
BAT54A-E3-08
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54S-HE3-08
BAT54S-HE3-08
DIODE SCHOTTKY 30V 200MA SOT23
BAT54A-HE3-18
BAT54A-HE3-18
DIODE SCHOTTKY 30V 200MA SOT23
BAT54C-E3-08
BAT54C-E3-08
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54S-E3-08
BAT54S-E3-08
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54C-HE3-08
BAT54C-HE3-08
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54C-E3-18
BAT54C-E3-18
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54S-E3-18
BAT54S-E3-18
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54S-HE3-18
BAT54S-HE3-18
DIODE SCHOTTKY 30V 200MA SOT23
BAT54-HE3-08
BAT54-HE3-08
DIODE SCHOTTKY 30V 200MA SOT23
BAT54-E3-08
BAT54-E3-08
DIODE SCHOTTKY 30V 200MA SOT23

Similar Products

Part Number BAT54-E3-18 BAT54-HE3-18 BAT54W-E3-18 BAT54-G3-18 BAT54-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOD-123 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOD-123 SOT-23-3 SOT-23-3
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

SM6T68CA-M3/5B
SM6T68CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T10CAHM3/H
SM6T10CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MURD620CTTR
MURD620CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 3A DPAK
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
LL4150-M-08
LL4150-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 600MA SOD80
BAT54W-HE3-08
BAT54W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C16-E3-08
BZX84C16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84C8V2-HE3-18
BZX84C8V2-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX384C6V8-HE3-08
BZX384C6V8-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323