BAT54-HE3-18
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Vishay General Semiconductor - Diodes Division BAT54-HE3-18

Manufacturer No:
BAT54-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54-HE3-18 is a Schottky diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the BAT54 series, known for its low turn-on voltage and fast switching capabilities. The BAT54-HE3-18 is specifically designed for high-performance applications, including automotive, industrial, and consumer electronics. It is AEC-Q101 qualified, ensuring reliability and compliance with automotive standards. The device is packaged in a SOT-23-3 case, making it suitable for surface mount applications.

Key Specifications

Parameter Value Unit
Forward Continuous Current (IF) 200 mA
Repetitive Peak Forward Current (IFRM) 300 mA
Surge Forward Current (IFSM) (tp < 1 s) 600 mA
Reverse Breakdown Voltage (VBR) 30 V
Forward Voltage (VF) at IF = 0.1 mA 240 mV
Forward Voltage (VF) at IF = 1 mA 320 mV
Reverse Recovery Time (trr) 5 ns
Diode Capacitance (CD) at VR = 1 V, f = 1 MHz 10 pF
Thermal Resistance Junction to Ambient Air (RthJA) 430 K/W
Junction Temperature (Tj) 125 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Operating Temperature Range (Top) -55 to +125 °C
Package SOT-23-3
Mounting Type Surface Mount

Key Features

  • Low turn-on voltage and fast switching capabilities.
  • AEC-Q101 qualified for automotive applications.
  • RoHS-compliant and meets UL 94 V-0 flammability rating.
  • Moisture Sensitivity Level (MSL) 1.
  • High surge forward current capability (600 mA for tp < 1 s).
  • Low forward voltage (e.g., 240 mV at IF = 0.1 mA).
  • Fast reverse recovery time (5 ns).
  • Low diode capacitance (10 pF at VR = 1 V, f = 1 MHz).

Applications

  • Automotive electronics: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial electronics: Used in high-performance industrial applications requiring fast switching and low forward voltage.
  • Consumer electronics: Ideal for rectification, polarity protection, or signal switching in consumer devices.
  • Computing and telecommunications: Used in high-speed interface solutions and EMI filtering.

Q & A

  1. What is the maximum forward continuous current of the BAT54-HE3-18?

    The maximum forward continuous current is 200 mA.

  2. What is the reverse breakdown voltage of the BAT54-HE3-18?

    The reverse breakdown voltage is 30 V.

  3. What is the typical forward voltage at 1 mA for the BAT54-HE3-18?

    The typical forward voltage at 1 mA is 320 mV.

  4. What is the reverse recovery time of the BAT54-HE3-18?

    The reverse recovery time is 5 ns.

  5. What is the thermal resistance junction to ambient air for the BAT54-HE3-18?

    The thermal resistance junction to ambient air is 430 K/W.

  6. Is the BAT54-HE3-18 RoHS-compliant?
  7. What is the storage temperature range for the BAT54-HE3-18?

    The storage temperature range is -65 to +150 °C.

  8. What is the operating temperature range for the BAT54-HE3-18?

    The operating temperature range is -55 to +125 °C.

  9. What package type is used for the BAT54-HE3-18?

    The package type is SOT-23-3.

  10. Is the BAT54-HE3-18 suitable for surface mount applications?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:125°C (Max)
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Similar Products

Part Number BAT54-HE3-18 BAT54W-HE3-18 BAT54-E3-18 BAT54-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOD-123 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOD-123 SOT-23-3 SOT-23-3
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

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