1N4002GP-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GP-E3/54

Manufacturer No:
1N4002GP-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GP-E3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the SUPERECTIFIER series and is designed for use in various applications such as power supplies, inverters, converters, and freewheeling diodes. It is suitable for both consumer and automotive applications due to its robust specifications and reliability.

Key Specifications

ParameterValueUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)100V
Maximum RMS Voltage (VRMS)70V
Maximum DC Blocking Voltage (VDC)100V
Maximum Average Forward Rectified Current (IF(AV))1.0A
Peak Forward Surge Current (IFSM)30A
Maximum Instantaneous Forward Voltage (VF)1.1V
Maximum DC Reverse Current (IR)5.0μA
Typical Reverse Recovery Time (trr)2.0μs
Typical Junction Capacitance (CJ)8.0pF
Operating Junction and Storage Temperature Range-65 to +175°C
PackageDO-41 (DO-204AL)
Mounting TypeThrough Hole

Key Features

  • RoHS-compliant and lead-free, ensuring environmental compliance.
  • Molded epoxy over glass body with a UL 94 V-0 flammability rating.
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • Meets JESD 201 class 1A whisker test.
  • High surge current capability.
  • Low reverse leakage current.
  • Standard recovery time greater than 500 ns.

Applications

The 1N4002GP-E3/54 is versatile and can be used in a variety of applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Consumer electronics.
  • Automotive electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4002GP-E3/54? The maximum repetitive peak reverse voltage is 100 V.
  2. What is the maximum average forward rectified current? The maximum average forward rectified current is 1.0 A.
  3. What is the peak forward surge current rating? The peak forward surge current rating is 30 A.
  4. What is the typical reverse recovery time? The typical reverse recovery time is 2.0 μs.
  5. Is the 1N4002GP-E3/54 RoHS-compliant? Yes, it is RoHS-compliant and lead-free.
  6. What is the operating junction and storage temperature range? The operating junction and storage temperature range is -65 to +175 °C.
  7. What type of package does the 1N4002GP-E3/54 come in? It comes in a DO-41 (DO-204AL) package.
  8. What is the mounting type of the 1N4002GP-E3/54? It is a through-hole mount.
  9. What are some common applications for the 1N4002GP-E3/54? Common applications include general purpose rectification, inverters, converters, freewheeling diodes, consumer electronics, and automotive electronics.
  10. What is the maximum DC reverse current at rated DC blocking voltage? The maximum DC reverse current at rated DC blocking voltage is 5.0 μA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.51
322

Please send RFQ , we will respond immediately.

Same Series
1N4005GP-E3/54
1N4005GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4007GP-E3/54
1N4007GP-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4005GP-E3/73
1N4005GP-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4003GPHE3/73
1N4003GPHE3/73
DIODE GEN PURP 200V 1A DO204AL
1N4004GP-E3/73
1N4004GP-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPEHE3/73
1N4005GPEHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/54
1N4004GPEHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/54
1N4007GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4005GPE-E3/53
1N4005GPE-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GPE-E3/91
1N4007GPE-E3/91
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4002GP-E3/54 1N4004GP-E3/54 1N4003GP-E3/54 1N4002GPE-E3/54 1N4002GPHE3/54 1N4002GP-M3/54 1N4001GP-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 400 V 200 V 100 V 100 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76

Related Product By Brand

SM6T220A-M3/52
SM6T220A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T15CAHM3_A/I
SM6T15CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T39CAHE3/52
SM6T39CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T10CAHE3_A/H
SM6T10CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
MBR20H100CTG-E3/4W
MBR20H100CTG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DUAL CC TO220
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
MUR420-M3/54
MUR420-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX384B2V4-HE3-08
BZX384B2V4-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84C3V9-G3-08
BZX84C3V9-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3