BYQ28EB-200HE3_A/P
  • Share:

Vishay General Semiconductor - Diodes Division BYQ28EB-200HE3_A/P

Manufacturer No:
BYQ28EB-200HE3_A/P
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY GP 200V 5A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28EB-200HE3_A/P is a dual ultrafast recovery rectifier diode array produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast recovery times and high reliability. The diode array is packaged in a TO-263AB (D2PAK) case, making it suitable for surface mount applications. It is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnit
Maximum DC Reverse VoltageVDC200V
Maximum Average Forward Rectified Current per DiodeIF(AV)5A
Peak Forward Surge Current per DiodeIFSM55A
Reverse Recovery Time per Diodetrr25ns
Forward Voltage Drop per DiodeVf1.1V @ 5 A
Operating Junction Temperature RangeTj-40 to +150°C
Package TypeTO-263AB (D2PAK)

Key Features

  • Ultrafast recovery times: The BYQ28EB-200HE3_A/P features recovery times of less than 25 ns, making it suitable for high-speed switching applications.
  • High reliability: Qualified to AEC-Q101 standards, this diode array is designed for use in automotive and other high-reliability applications.
  • Low forward voltage drop: With a maximum forward voltage drop of 1.1 V at 5 A, this diode minimizes power losses.
  • High surge current capability: The diode can handle peak forward surge currents up to 55 A.
  • Wide operating temperature range: The diode operates from -40°C to +150°C, making it versatile for various environmental conditions.

Applications

The BYQ28EB-200HE3_A/P is primarily used in switching applications, including power supplies, motor control circuits, and other high-frequency switching environments. Its fast recovery times and high reliability make it an excellent choice for automotive systems, industrial power supplies, and other demanding applications.

Q & A

  1. What is the maximum DC reverse voltage of the BYQ28EB-200HE3_A/P?
    The maximum DC reverse voltage is 200 V.
  2. What is the average forward rectified current per diode?
    The average forward rectified current per diode is 5 A.
  3. What is the peak forward surge current per diode?
    The peak forward surge current per diode is 55 A.
  4. What is the reverse recovery time per diode?
    The reverse recovery time per diode is 25 ns.
  5. What is the forward voltage drop per diode at 5 A?
    The forward voltage drop per diode at 5 A is 1.1 V.
  6. What is the operating junction temperature range?
    The operating junction temperature range is -40°C to +150°C.
  7. What package type is used for the BYQ28EB-200HE3_A/P?
    The package type is TO-263AB (D2PAK).
  8. Is the BYQ28EB-200HE3_A/P qualified for automotive use?
    Yes, it is AEC-Q101 qualified.
  9. What are the primary applications of the BYQ28EB-200HE3_A/P?
    The primary applications include switching applications, power supplies, motor control circuits, and other high-frequency switching environments.
  10. What is the lead free status of the BYQ28EB-200HE3_A/P?
    The component contains lead but is RoHS compliant.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
0 Remaining View Similar

In Stock

$0.77
1,061

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BYQ28EB-200HE3_A/P BYQ28EF-200HE3_A/P BYQ28EB-100HE3_A/P BYQ28EB-200HE3_A/I
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 100 V 200 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V 10 µA @ 100 V 10 µA @ 200 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 Full Pack, Isolated Tab TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK) ITO-220AB TO-263AB (D²PAK) TO-263AB (D²PAK)

Related Product By Categories

BAT54C-HF
BAT54C-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
BAV99S-AU_R1_000A1
BAV99S-AU_R1_000A1
Panjit International Inc.
SOT-363, SWITCHING
BAV199-AQ
BAV199-AQ
Diotec Semiconductor
DIODE SOT-23 85V 0.14A 3NS
BAS40-04LT1G
BAS40-04LT1G
onsemi
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAV23C-7-F
BAV23C-7-F
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
BAV23C-G3-18
BAV23C-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
STPS20150CFP
STPS20150CFP
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V TO220F
MURB1620CT
MURB1620CT
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
MBR1545CT/45
MBR1545CT/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO220AB
MURB1620CT-T-F
MURB1620CT-T-F
Diodes Incorporated
DIODE ARRAY GP 200V 16A D2PAK
STPS30150CG
STPS30150CG
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
MBR2545CT-7HE3/45
MBR2545CT-7HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB

Related Product By Brand

SM15T36AHE3_A/I
SM15T36AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T24AHE3/9AT
SM15T24AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
MBR2545CT-7HE3/45
MBR2545CT-7HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BAS85-GS08
BAS85-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD80
BAT43WS-HE3-18
BAT43WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BAS40LTH-G3-08
BAS40LTH-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX84C13-G3-08
BZX84C13-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3