BYQ28EB-200HE3_A/P
  • Share:

Vishay General Semiconductor - Diodes Division BYQ28EB-200HE3_A/P

Manufacturer No:
BYQ28EB-200HE3_A/P
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY GP 200V 5A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28EB-200HE3_A/P is a dual ultrafast recovery rectifier diode array produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast recovery times and high reliability. The diode array is packaged in a TO-263AB (D2PAK) case, making it suitable for surface mount applications. It is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnit
Maximum DC Reverse VoltageVDC200V
Maximum Average Forward Rectified Current per DiodeIF(AV)5A
Peak Forward Surge Current per DiodeIFSM55A
Reverse Recovery Time per Diodetrr25ns
Forward Voltage Drop per DiodeVf1.1V @ 5 A
Operating Junction Temperature RangeTj-40 to +150°C
Package TypeTO-263AB (D2PAK)

Key Features

  • Ultrafast recovery times: The BYQ28EB-200HE3_A/P features recovery times of less than 25 ns, making it suitable for high-speed switching applications.
  • High reliability: Qualified to AEC-Q101 standards, this diode array is designed for use in automotive and other high-reliability applications.
  • Low forward voltage drop: With a maximum forward voltage drop of 1.1 V at 5 A, this diode minimizes power losses.
  • High surge current capability: The diode can handle peak forward surge currents up to 55 A.
  • Wide operating temperature range: The diode operates from -40°C to +150°C, making it versatile for various environmental conditions.

Applications

The BYQ28EB-200HE3_A/P is primarily used in switching applications, including power supplies, motor control circuits, and other high-frequency switching environments. Its fast recovery times and high reliability make it an excellent choice for automotive systems, industrial power supplies, and other demanding applications.

Q & A

  1. What is the maximum DC reverse voltage of the BYQ28EB-200HE3_A/P?
    The maximum DC reverse voltage is 200 V.
  2. What is the average forward rectified current per diode?
    The average forward rectified current per diode is 5 A.
  3. What is the peak forward surge current per diode?
    The peak forward surge current per diode is 55 A.
  4. What is the reverse recovery time per diode?
    The reverse recovery time per diode is 25 ns.
  5. What is the forward voltage drop per diode at 5 A?
    The forward voltage drop per diode at 5 A is 1.1 V.
  6. What is the operating junction temperature range?
    The operating junction temperature range is -40°C to +150°C.
  7. What package type is used for the BYQ28EB-200HE3_A/P?
    The package type is TO-263AB (D2PAK).
  8. Is the BYQ28EB-200HE3_A/P qualified for automotive use?
    Yes, it is AEC-Q101 qualified.
  9. What are the primary applications of the BYQ28EB-200HE3_A/P?
    The primary applications include switching applications, power supplies, motor control circuits, and other high-frequency switching environments.
  10. What is the lead free status of the BYQ28EB-200HE3_A/P?
    The component contains lead but is RoHS compliant.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
0 Remaining View Similar

In Stock

$0.77
1,061

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BYQ28EB-200HE3_A/P BYQ28EF-200HE3_A/P BYQ28EB-100HE3_A/P BYQ28EB-200HE3_A/I
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 100 V 200 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V 10 µA @ 100 V 10 µA @ 200 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 Full Pack, Isolated Tab TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK) ITO-220AB TO-263AB (D²PAK) TO-263AB (D²PAK)

Related Product By Categories

PMEG4010CPA,115
PMEG4010CPA,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V 3HUSON
BAV99WT1G
BAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SC70-3
BAT54ADW-7-F
BAT54ADW-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAS40DW-06-7-F
BAS40DW-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAT54BRW-7
BAT54BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAS 40-07 B6327
BAS 40-07 B6327
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT143
MBR6045PTG
MBR6045PTG
onsemi
DIODE ARRAY SCHOTTKY 45V SOT93
BAW 56W H6327
BAW 56W H6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAW56W/DG/B3X
BAW56W/DG/B3X
Nexperia USA Inc.
DIODE SWITCHING SOT363
NRVBD660CTT4G
NRVBD660CTT4G
onsemi
DIODE ARRAY SCHOTTKY 60V 3A DPAK
BAT54AHYT116
BAT54AHYT116
Rohm Semiconductor
30V, 200MA, SOT-23, ANODE COMMON
BAV99T116
BAV99T116
Rohm Semiconductor
DIODE ARRAY GP 75V 215MA SSD3

Related Product By Brand

SM15T39A-E3/9AT
SM15T39A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T12A-E3/5B
SM6T12A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T12A-E3/9AT
SM15T12A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T33AHE3/57T
SM15T33AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM15T12AHM3_A/H
SM15T12AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
BAV23C-G3-08
BAV23C-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
BAT43WS-HE3-18
BAT43WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX84B3V3-HE3-08
BZX84B3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3