BYQ28EB-200HE3_A/P
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Vishay General Semiconductor - Diodes Division BYQ28EB-200HE3_A/P

Manufacturer No:
BYQ28EB-200HE3_A/P
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY GP 200V 5A TO263AB
Delivery:
Payment:
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Product Introduction

Overview

The BYQ28EB-200HE3_A/P is a dual ultrafast recovery rectifier diode array produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast recovery times and high reliability. The diode array is packaged in a TO-263AB (D2PAK) case, making it suitable for surface mount applications. It is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnit
Maximum DC Reverse VoltageVDC200V
Maximum Average Forward Rectified Current per DiodeIF(AV)5A
Peak Forward Surge Current per DiodeIFSM55A
Reverse Recovery Time per Diodetrr25ns
Forward Voltage Drop per DiodeVf1.1V @ 5 A
Operating Junction Temperature RangeTj-40 to +150°C
Package TypeTO-263AB (D2PAK)

Key Features

  • Ultrafast recovery times: The BYQ28EB-200HE3_A/P features recovery times of less than 25 ns, making it suitable for high-speed switching applications.
  • High reliability: Qualified to AEC-Q101 standards, this diode array is designed for use in automotive and other high-reliability applications.
  • Low forward voltage drop: With a maximum forward voltage drop of 1.1 V at 5 A, this diode minimizes power losses.
  • High surge current capability: The diode can handle peak forward surge currents up to 55 A.
  • Wide operating temperature range: The diode operates from -40°C to +150°C, making it versatile for various environmental conditions.

Applications

The BYQ28EB-200HE3_A/P is primarily used in switching applications, including power supplies, motor control circuits, and other high-frequency switching environments. Its fast recovery times and high reliability make it an excellent choice for automotive systems, industrial power supplies, and other demanding applications.

Q & A

  1. What is the maximum DC reverse voltage of the BYQ28EB-200HE3_A/P?
    The maximum DC reverse voltage is 200 V.
  2. What is the average forward rectified current per diode?
    The average forward rectified current per diode is 5 A.
  3. What is the peak forward surge current per diode?
    The peak forward surge current per diode is 55 A.
  4. What is the reverse recovery time per diode?
    The reverse recovery time per diode is 25 ns.
  5. What is the forward voltage drop per diode at 5 A?
    The forward voltage drop per diode at 5 A is 1.1 V.
  6. What is the operating junction temperature range?
    The operating junction temperature range is -40°C to +150°C.
  7. What package type is used for the BYQ28EB-200HE3_A/P?
    The package type is TO-263AB (D2PAK).
  8. Is the BYQ28EB-200HE3_A/P qualified for automotive use?
    Yes, it is AEC-Q101 qualified.
  9. What are the primary applications of the BYQ28EB-200HE3_A/P?
    The primary applications include switching applications, power supplies, motor control circuits, and other high-frequency switching environments.
  10. What is the lead free status of the BYQ28EB-200HE3_A/P?
    The component contains lead but is RoHS compliant.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
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Similar Products

Part Number BYQ28EB-200HE3_A/P BYQ28EF-200HE3_A/P BYQ28EB-100HE3_A/P BYQ28EB-200HE3_A/I
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 100 V 200 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V 10 µA @ 100 V 10 µA @ 200 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Surface Mount Through Hole Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 Full Pack, Isolated Tab TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK) ITO-220AB TO-263AB (D²PAK) TO-263AB (D²PAK)

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