BYQ28EF-200HE3_A/P
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Vishay General Semiconductor - Diodes Division BYQ28EF-200HE3_A/P

Manufacturer No:
BYQ28EF-200HE3_A/P
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY GP 200V 5A ITO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28EF-200HE3_A/P, manufactured by Vishay General Semiconductor, is a high-performance diode array designed for various industrial and automotive applications. This component features a pair of diodes with a common cathode configuration, making it ideal for high-frequency switching and pulse-width modulation. With its robust specifications and reliable performance, it is well-suited for demanding environments.

Key Specifications

Specification Value
Manufacturer Vishay General Semiconductor
Package TO-220FP-3
Description Diode Array 1 Pair Common Cathode 200 V 5A Through Hole
Vr - Reverse Voltage 200 V
If - Forward Current 10 A
Type Fast Recovery Rectifiers
Configuration Dual Common Cathode
Vf - Forward Voltage 1.25 V
Max Surge Current 55 A
Ir - Reverse Current 10 uA
Recovery Time 25 ns
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
Mounting Style Through Hole
RoHS True
Qualification AEC-Q101

Key Features

  • High-Speed Switching and Blocking Capabilities: Ideal for reliable rectification in high-frequency applications.
  • Dual Common Cathode Configuration: Enhances versatility in circuit designs.
  • Fast Recovery Time: 25 ns recovery time ensures efficient performance in switching applications.
  • High Forward Current and Surge Current Capability: Supports up to 10 A forward current and 55 A surge current.
  • Wide Operating Temperature Range: Operates from -40 °C to +150 °C, making it suitable for various environmental conditions.
  • AEC-Q101 Qualified: Meets automotive industry standards for reliability and performance.

Applications

  • Industrial Automation and Control Systems: Used in high-power rectification and switching applications.
  • Automotive Systems: Suitable for power conversion in LED headlights, dashboard displays, and electronic control units (ECUs).
  • Power Conversion and Rectification: Ideal for high-efficiency power conversion in various industrial and consumer electronics.
  • Telecommunications Equipment: Used in power supply and signal processing applications.

Q & A

  1. What is the reverse voltage rating of the BYQ28EF-200HE3_A/P diode array?

    The reverse voltage rating is 200 V.

  2. What is the forward current capability of this diode array?

    The forward current capability is up to 10 A.

  3. What is the recovery time of the BYQ28EF-200HE3_A/P diode array?

    The recovery time is 25 ns.

  4. What is the maximum operating temperature for this component?

    The maximum operating temperature is +150 °C.

  5. Is the BYQ28EF-200HE3_A/P RoHS compliant?

    Yes, it is RoHS compliant.

  6. What is the qualification standard for this diode array?

    It is AEC-Q101 qualified.

  7. What type of mounting style does this component use?

    It uses a through-hole mounting style.

  8. What are some common applications for the BYQ28EF-200HE3_A/P diode array?

    Common applications include industrial automation, automotive systems, power conversion, and telecommunications equipment.

  9. What is the package type of the BYQ28EF-200HE3_A/P diode array?

    The package type is TO-220FP-3.

  10. What is the forward voltage drop of this diode array?

    The forward voltage drop is 1.25 V.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:ITO-220AB
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Similar Products

Part Number BYQ28EF-200HE3_A/P BYQ28EB-200HE3_A/P BYQ28EF-100HE3_A/P
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 100 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V 10 µA @ 100 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Through Hole Surface Mount Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 Full Pack, Isolated Tab
Supplier Device Package ITO-220AB TO-263AB (D²PAK) ITO-220AB

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