1N4002GP-M3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GP-M3/54

Manufacturer No:
1N4002GP-M3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GP-M3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various electronic applications requiring reliable and efficient rectification. The 1N4002GP-M3/54 is specifically designed for use in power supplies, inverters, converters, and as freewheeling diodes in consumer electronics.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS Voltage VRMS 70 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Typical Reverse Recovery Time trr 2.0 μs μs
Typical Junction Capacitance CJ 8.0 pF pF
Operating Junction and Storage Temperature Range TJ -50°C to 150°C °C
Package DO-204AL (DO-41)
Mounting Type Through Hole

Key Features

  • General Purpose Rectification: Suitable for use in power supplies, inverters, converters, and as freewheeling diodes.
  • High Voltage Ratings: Available with peak reverse voltage ratings from 50V to 1000V, making it versatile for various applications.
  • High Surge Current Capability: Can handle peak forward surge currents up to 30A for 8.3 ms.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1V at 1A.
  • Low Reverse Current: Maximum DC reverse current of 5.0 μA at rated DC blocking voltage.
  • Wide Operating Temperature Range: Operates from -50°C to 150°C.
  • RoHS Compliant: Meets RoHS standards, ensuring environmental compliance.
  • UL 94 V-0 Flammability Rating: The molding compound meets UL 94 V-0 flammability rating, enhancing safety.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage power flow.
  • Freewheeling Diodes: Acts as freewheeling diodes in motor control and other inductive load applications.
  • Consumer Electronics: Commonly used in various consumer electronic devices requiring reliable rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage for the 1N4002GP-M3/54 diode?

    The maximum repetitive peak reverse voltage (VRRM) for the 1N4002GP-M3/54 is 100V.

  2. What is the maximum average forward rectified current for this diode?

    The maximum average forward rectified current (IF(AV)) is 1.0A.

  3. What is the peak forward surge current rating for the 1N4002GP-M3/54?

    The peak forward surge current (IFSM) is 30A for an 8.3 ms sine-wave.

  4. What is the maximum instantaneous forward voltage drop for this diode?

    The maximum instantaneous forward voltage (VF) is 1.1V at 1A.

  5. What is the operating junction temperature range for the 1N4002GP-M3/54?

    The operating junction temperature range is from -50°C to 150°C.

  6. Is the 1N4002GP-M3/54 RoHS compliant?

    Yes, the 1N4002GP-M3/54 is RoHS compliant.

  7. What type of package does the 1N4002GP-M3/54 come in?

    The diode comes in a DO-204AL (DO-41) package.

  8. What is the typical reverse recovery time for this diode?

    The typical reverse recovery time (trr) is 2.0 μs.

  9. What is the typical junction capacitance of the 1N4002GP-M3/54?

    The typical junction capacitance (CJ) is 8.0 pF at 4V and 1 MHz.

  10. What are some common applications for the 1N4002GP-M3/54 diode?

    Common applications include power supplies, inverters, converters, and as freewheeling diodes in consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
515

Please send RFQ , we will respond immediately.

Same Series
3002869
3002869
CONN TERM BLK INSUL SLEEVE BLACK
1N4001GPHM3/54
1N4001GPHM3/54
DIODE GEN PURP 50V 1A DO204AL
1N4001GP-M3/54
1N4001GP-M3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-M3/54
1N4002GPE-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GP-M3/54
1N4003GP-M3/54
DIODE GEN PURP 200V 1A DO204AL
1N4004GPHM3/54
1N4004GPHM3/54
DIODE GEN PURP 400V 1A DO204AL
1N4005GPHM3/54
1N4005GPHM3/54
DIODE GEN PURP 600V 1A DO204AL
1N4005GP-M3/54
1N4005GP-M3/54
DIODE GEN PURP 600V 1A DO204AL
1N4006GP-M3/54
1N4006GP-M3/54
DIODE GEN PURP 800V 1A DO204AL
1N4007GP-M3/54
1N4007GP-M3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4002GP-M3/54
1N4002GP-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GPHM3/54
1N4003GPHM3/54
DIODE GEN PURP 200V 1A DO204AL

Similar Products

Part Number 1N4002GP-M3/54 1N4002GPE-M3/54 1N4002GPHM3/54 1N4003GP-M3/54 1N4004GP-M3/54 1N4001GP-M3/54 1N4002GP-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 200 V 400 V 50 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 50 V 5 µA @ 100 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -55°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

SM6T15A-E3/52
SM6T15A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T36A-E3/57T
SM15T36A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T22CA-E3/9AT
SM15T22CA-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM6T200AHE3/5B
SM6T200AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AA
SM15T200AHM3/H
SM15T200AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
1N4148W-G3-08
1N4148W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BYW29-200-E3/45
BYW29-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BAT43W-G3-08
BAT43W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BZX84C39-HE3-08
BZX84C39-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX84B4V7-G3-08
BZX84B4V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3