1N4001GPHM3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GPHM3/54

Manufacturer No:
1N4001GPHM3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPHM3/54 diode, produced by Vishay General Semiconductor - Diodes Division, is a widely used component in electronic circuits. It belongs to the 1N400x series and is known for its reliability and versatility. This diode is primarily used for converting alternating current (AC) to direct current (DC) and is indispensable in power supply circuits. With its robust construction, it can handle a peak repetitive reverse voltage of 50V and an average forward current of up to 1A, making it suitable for low-to-moderate current applications such as power supplies, chargers, and adapters.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (V_R) 50 V
RMS Reverse Voltage (V_RMS) 35 V
Average Forward Current (I_F) 1 A
Non-Repetitive Peak Forward Surge Current (I_FSM) 30 A (8.3ms half-sine wave)
Forward Voltage (V_F) 1.1 V at 1A
Reverse Current (I_R) 5µA at 50V
Power Dissipation (P_D) 2.5 W
Operating Temperature Range -65°C to +150°C
Storage Temperature Range -65°C to +150°C
Reverse Recovery Time (t_rr) 2µs

Key Features

  • High Surge Current Capability: The diode can handle a peak current of 30A during power surges or startup conditions, protecting electronic components against short-term overloads.
  • Low Forward Voltage Drop: A forward current of 1A results in a forward voltage drop of 1.1V, making it energy-efficient and reducing thermal management requirements.
  • High Reverse Voltage Rating: It can handle repetitive reverse voltages of up to 50V, providing reliable performance in circuits with moderate voltage levels.
  • Low Reverse Leakage Current: At 50V, the diode has a minimal reverse leakage current of 5µA, indicating high efficiency in blocking reverse current.
  • High Average Forward Current: It can handle an average forward current of 1A, making it suitable for rectifying power in low-to-moderate current applications.
  • Robust Thermal Management: The diode operates safely within a temperature range of -65°C to +150°C, supporting reliability in various applications.
  • Fast Recovery Time: The diode has a fast recovery time of 2µs, reducing switching losses and making it suitable for high-speed switching applications.
  • DO-41 Package: The diode is housed in a DO-41 package, which is versatile and easy to use in both through-hole and surface-mount applications.
  • Durability and Reliability: Known for its rugged design, the 1N4001 diode ensures consistent performance over time, making it a reliable choice for long-term projects.

Applications

The 1N4001GPHM3/54 diode is widely used in various electronic applications, including:

  • Power Supplies: It is essential for converting AC to DC in power supply circuits.
  • Chargers and Adapters: Suitable for low-to-moderate current applications.
  • Consumer Electronics: Used in a variety of consumer electronic devices due to its robust construction and reliable performance.
  • Industrial Systems: Its ability to operate over a wide temperature range makes it suitable for industrial applications.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001GPHM3/54 diode?

    The peak repetitive reverse voltage is up to 50V.

  2. What is the average forward current capacity of the 1N4001GPHM3/54 diode?

    The average forward current capacity is up to 1A.

  3. What is the non-repetitive peak forward surge current of the 1N4001GPHM3/54 diode?

    The non-repetitive peak forward surge current is 30A (8.3ms half-sine wave).

  4. What is the forward voltage drop of the 1N4001GPHM3/54 diode at 1A?

    The forward voltage drop is 1.1V at 1A.

  5. What is the reverse current of the 1N4001GPHM3/54 diode at 50V?

    The reverse current is 5µA at 50V.

  6. What is the operating temperature range of the 1N4001GPHM3/54 diode?

    The operating temperature range is -65°C to +150°C.

  7. What is the storage temperature range of the 1N4001GPHM3/54 diode?

    The storage temperature range is -65°C to +150°C.

  8. What is the reverse recovery time of the 1N4001GPHM3/54 diode?

    The reverse recovery time is 2µs.

  9. In what type of package is the 1N4001GPHM3/54 diode housed?

    The diode is housed in a DO-41 package.

  10. Why is the 1N4001GPHM3/54 diode preferred in electronic projects?

    It is preferred due to its rugged design, consistent performance, and reliability over time.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
80

Please send RFQ , we will respond immediately.

Same Series
3002869
3002869
CONN TERM BLK INSUL SLEEVE BLACK
1N4001GP-M3/54
1N4001GP-M3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-M3/54
1N4002GPE-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GP-M3/54
1N4003GP-M3/54
DIODE GEN PURP 200V 1A DO204AL
1N4004GPHM3/54
1N4004GPHM3/54
DIODE GEN PURP 400V 1A DO204AL
1N4004GP-M3/54
1N4004GP-M3/54
DIODE GEN PURP 400V 1A DO204AL
1N4005GPHM3/54
1N4005GPHM3/54
DIODE GEN PURP 600V 1A DO204AL
1N4006GP-M3/54
1N4006GP-M3/54
DIODE GEN PURP 800V 1A DO204AL
1N4007GPHM3/54
1N4007GPHM3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4007GP-M3/54
1N4007GP-M3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4002GP-M3/54
1N4002GP-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GPHM3/54
1N4003GPHM3/54
DIODE GEN PURP 200V 1A DO204AL

Similar Products

Part Number 1N4001GPHM3/54 1N4002GPHM3/54 1N4003GPHM3/54 1N4001GP-M3/54 1N4001GPHE3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 100 V 200 V 50 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T15CA-M3/52
SM6T15CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T150AHM3_A/I
SM6T150AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T6V8CAHM3_A/H
SM6T6V8CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM6T33CAHM3_A/H
SM6T33CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T18AHM3_A/I
SM15T18AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAS40-05-G3-18
BAS40-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
BAS21-E3-18
BAS21-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
LL4150-M-08
LL4150-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 600MA SOD80
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX384C5V1-HE3-08
BZX384C5V1-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 200MW SOD323
BZX84B24-E3-08
BZX84B24-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3