1N4001GPHM3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GPHM3/54

Manufacturer No:
1N4001GPHM3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPHM3/54 diode, produced by Vishay General Semiconductor - Diodes Division, is a widely used component in electronic circuits. It belongs to the 1N400x series and is known for its reliability and versatility. This diode is primarily used for converting alternating current (AC) to direct current (DC) and is indispensable in power supply circuits. With its robust construction, it can handle a peak repetitive reverse voltage of 50V and an average forward current of up to 1A, making it suitable for low-to-moderate current applications such as power supplies, chargers, and adapters.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (V_R) 50 V
RMS Reverse Voltage (V_RMS) 35 V
Average Forward Current (I_F) 1 A
Non-Repetitive Peak Forward Surge Current (I_FSM) 30 A (8.3ms half-sine wave)
Forward Voltage (V_F) 1.1 V at 1A
Reverse Current (I_R) 5µA at 50V
Power Dissipation (P_D) 2.5 W
Operating Temperature Range -65°C to +150°C
Storage Temperature Range -65°C to +150°C
Reverse Recovery Time (t_rr) 2µs

Key Features

  • High Surge Current Capability: The diode can handle a peak current of 30A during power surges or startup conditions, protecting electronic components against short-term overloads.
  • Low Forward Voltage Drop: A forward current of 1A results in a forward voltage drop of 1.1V, making it energy-efficient and reducing thermal management requirements.
  • High Reverse Voltage Rating: It can handle repetitive reverse voltages of up to 50V, providing reliable performance in circuits with moderate voltage levels.
  • Low Reverse Leakage Current: At 50V, the diode has a minimal reverse leakage current of 5µA, indicating high efficiency in blocking reverse current.
  • High Average Forward Current: It can handle an average forward current of 1A, making it suitable for rectifying power in low-to-moderate current applications.
  • Robust Thermal Management: The diode operates safely within a temperature range of -65°C to +150°C, supporting reliability in various applications.
  • Fast Recovery Time: The diode has a fast recovery time of 2µs, reducing switching losses and making it suitable for high-speed switching applications.
  • DO-41 Package: The diode is housed in a DO-41 package, which is versatile and easy to use in both through-hole and surface-mount applications.
  • Durability and Reliability: Known for its rugged design, the 1N4001 diode ensures consistent performance over time, making it a reliable choice for long-term projects.

Applications

The 1N4001GPHM3/54 diode is widely used in various electronic applications, including:

  • Power Supplies: It is essential for converting AC to DC in power supply circuits.
  • Chargers and Adapters: Suitable for low-to-moderate current applications.
  • Consumer Electronics: Used in a variety of consumer electronic devices due to its robust construction and reliable performance.
  • Industrial Systems: Its ability to operate over a wide temperature range makes it suitable for industrial applications.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001GPHM3/54 diode?

    The peak repetitive reverse voltage is up to 50V.

  2. What is the average forward current capacity of the 1N4001GPHM3/54 diode?

    The average forward current capacity is up to 1A.

  3. What is the non-repetitive peak forward surge current of the 1N4001GPHM3/54 diode?

    The non-repetitive peak forward surge current is 30A (8.3ms half-sine wave).

  4. What is the forward voltage drop of the 1N4001GPHM3/54 diode at 1A?

    The forward voltage drop is 1.1V at 1A.

  5. What is the reverse current of the 1N4001GPHM3/54 diode at 50V?

    The reverse current is 5µA at 50V.

  6. What is the operating temperature range of the 1N4001GPHM3/54 diode?

    The operating temperature range is -65°C to +150°C.

  7. What is the storage temperature range of the 1N4001GPHM3/54 diode?

    The storage temperature range is -65°C to +150°C.

  8. What is the reverse recovery time of the 1N4001GPHM3/54 diode?

    The reverse recovery time is 2µs.

  9. In what type of package is the 1N4001GPHM3/54 diode housed?

    The diode is housed in a DO-41 package.

  10. Why is the 1N4001GPHM3/54 diode preferred in electronic projects?

    It is preferred due to its rugged design, consistent performance, and reliability over time.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
80

Please send RFQ , we will respond immediately.

Same Series
1N4001GPHM3/54
1N4001GPHM3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-M3/54
1N4002GPE-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4002GPHM3/54
1N4002GPHM3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GP-M3/54
1N4003GP-M3/54
DIODE GEN PURP 200V 1A DO204AL
1N4004GPHM3/54
1N4004GPHM3/54
DIODE GEN PURP 400V 1A DO204AL
1N4005GPE-M3/54
1N4005GPE-M3/54
DIODE GEN PURP 600V 1A DO204AL
1N4005GPHM3/54
1N4005GPHM3/54
DIODE GEN PURP 600V 1A DO204AL
1N4005GP-M3/54
1N4005GP-M3/54
DIODE GEN PURP 600V 1A DO204AL
1N4006GP-M3/54
1N4006GP-M3/54
DIODE GEN PURP 800V 1A DO204AL
1N4007GPHM3/54
1N4007GPHM3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4007GP-M3/54
1N4007GP-M3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4003GPHM3/54
1N4003GPHM3/54
DIODE GEN PURP 200V 1A DO204AL

Similar Products

Part Number 1N4001GPHM3/54 1N4002GPHM3/54 1N4003GPHM3/54 1N4001GP-M3/54 1N4001GPHE3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 100 V 200 V 50 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T10AHE3_A/H
SM6T10AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T220AHE3_A/H
SM6T220AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T200CA-M3/52
SM6T200CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AA
SM15T33AHE3/57T
SM15T33AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
MURS140-M3/52T
MURS140-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO214AA
SS14HE3/5AT
SS14HE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
1N4007GPHM3/54
1N4007GPHM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX384B3V0-E3-08
BZX384B3V0-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323
BZX84B18-HE3-08
BZX84B18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX384B36-G3-18
BZX384B36-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 200MW SOD323