Overview
The BAS16WS-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is known for its fast recovery time and low forward voltage drop. It is part of the BAS16 series, which is widely used in various electronic circuits requiring efficient and reliable switching performance.
Key Specifications
Parameter | Test Condition | Symbol | Value | Unit |
---|---|---|---|---|
Reverse Voltage | Tamb = 25 °C | VR | 75 | V |
Repetitive Peak Reverse Voltage | Tamb = 25 °C | VRRM | 100 | V |
Forward Current (Continuous) | Tamb = 25 °C | IF | 250 | mA |
Non-Repetitive Peak Forward Current | t = 1 μs | IFSM | 2 A | |
Power Dissipation | Tamb = 25 °C | Ptot | 200 | mW |
Thermal Resistance Junction to Ambient Air | Tamb = 25 °C | RthJA | 650 | K/W |
Junction Temperature | Tj | 150 | °C | |
Forward Voltage | IF = 1 mA | Vf | 0.715 | V |
Leakage Current | VR = 75 V, Tj = 150 °C | IR | 50 μA | |
Diode Capacitance | VR = 0 V, f = 1 MHz | Cd | 2 pF | |
Reverse Recovery Time | IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω | tRR | 6 ns |
Key Features
- Silicon Epitaxial Planar Diode: Ensures high reliability and performance.
- Fast Switching Diode: Ideal for high-speed switching applications with a reverse recovery time of 6 ns.
- AEC-Q101 Qualified: Available for automotive applications, ensuring compliance with automotive standards.
- Low Forward Voltage Drop: Minimizes power loss and heat generation.
- Small Package Size (SOD-323): Suitable for compact and surface-mount designs.
- Wide Operating Temperature Range: From -55 °C to 150 °C, making it versatile for various environments.
Applications
- Automotive Electronics: Due to its AEC-Q101 qualification, it is suitable for use in automotive systems.
- Consumer Electronics: Used in various consumer electronic devices requiring fast switching and low power consumption.
- Industrial Control Systems: Ideal for high-speed switching in industrial control circuits.
- Telecommunications: Used in telecommunications equipment for efficient signal switching.
Q & A
- What is the maximum reverse voltage of the BAS16WS-G3-08 diode?
The maximum reverse voltage is 75 V, and the repetitive peak reverse voltage is 100 V.
- What is the continuous forward current rating of this diode?
The continuous forward current rating is 250 mA.
- What is the reverse recovery time of the BAS16WS-G3-08?
The reverse recovery time is 6 ns.
- What is the junction temperature range for this diode?
The junction temperature range is from -55 °C to 150 °C.
- Is the BAS16WS-G3-08 AEC-Q101 qualified?
Yes, it is available with AEC-Q101 qualification for automotive applications.
- What is the package type of the BAS16WS-G3-08?
The package type is SOD-323.
- What is the thermal resistance junction to ambient air for this diode?
The thermal resistance junction to ambient air is 650 K/W.
- What is the maximum power dissipation of the BAS16WS-G3-08?
The maximum power dissipation is 200 mW.
- What is the typical forward voltage drop at 1 mA?
The typical forward voltage drop at 1 mA is 0.715 V.
- What is the diode capacitance at 0 V and 1 MHz?
The diode capacitance at 0 V and 1 MHz is 2 pF.