BAS16WS-G3-08
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Vishay General Semiconductor - Diodes Division BAS16WS-G3-08

Manufacturer No:
BAS16WS-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD323
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The BAS16WS-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is known for its fast recovery time and low forward voltage drop. It is part of the BAS16 series, which is widely used in various electronic circuits requiring efficient and reliable switching performance.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage Tamb = 25 °C VR 75 V
Repetitive Peak Reverse Voltage Tamb = 25 °C VRRM 100 V
Forward Current (Continuous) Tamb = 25 °C IF 250 mA
Non-Repetitive Peak Forward Current t = 1 μs IFSM 2 A
Power Dissipation Tamb = 25 °C Ptot 200 mW
Thermal Resistance Junction to Ambient Air Tamb = 25 °C RthJA 650 K/W
Junction Temperature Tj 150 °C
Forward Voltage IF = 1 mA Vf 0.715 V
Leakage Current VR = 75 V, Tj = 150 °C IR 50 μA
Diode Capacitance VR = 0 V, f = 1 MHz Cd 2 pF
Reverse Recovery Time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω tRR 6 ns

Key Features

  • Silicon Epitaxial Planar Diode: Ensures high reliability and performance.
  • Fast Switching Diode: Ideal for high-speed switching applications with a reverse recovery time of 6 ns.
  • AEC-Q101 Qualified: Available for automotive applications, ensuring compliance with automotive standards.
  • Low Forward Voltage Drop: Minimizes power loss and heat generation.
  • Small Package Size (SOD-323): Suitable for compact and surface-mount designs.
  • Wide Operating Temperature Range: From -55 °C to 150 °C, making it versatile for various environments.

Applications

  • Automotive Electronics: Due to its AEC-Q101 qualification, it is suitable for use in automotive systems.
  • Consumer Electronics: Used in various consumer electronic devices requiring fast switching and low power consumption.
  • Industrial Control Systems: Ideal for high-speed switching in industrial control circuits.
  • Telecommunications: Used in telecommunications equipment for efficient signal switching.

Q & A

  1. What is the maximum reverse voltage of the BAS16WS-G3-08 diode?

    The maximum reverse voltage is 75 V, and the repetitive peak reverse voltage is 100 V.

  2. What is the continuous forward current rating of this diode?

    The continuous forward current rating is 250 mA.

  3. What is the reverse recovery time of the BAS16WS-G3-08?

    The reverse recovery time is 6 ns.

  4. What is the junction temperature range for this diode?

    The junction temperature range is from -55 °C to 150 °C.

  5. Is the BAS16WS-G3-08 AEC-Q101 qualified?

    Yes, it is available with AEC-Q101 qualification for automotive applications.

  6. What is the package type of the BAS16WS-G3-08?

    The package type is SOD-323.

  7. What is the thermal resistance junction to ambient air for this diode?

    The thermal resistance junction to ambient air is 650 K/W.

  8. What is the maximum power dissipation of the BAS16WS-G3-08?

    The maximum power dissipation is 200 mW.

  9. What is the typical forward voltage drop at 1 mA?

    The typical forward voltage drop at 1 mA is 0.715 V.

  10. What is the diode capacitance at 0 V and 1 MHz?

    The diode capacitance at 0 V and 1 MHz is 2 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
BAS16WS-G3-18
BAS16WS-G3-18
DIODE GEN PURP 75V 250MA SOD323

Similar Products

Part Number BAS16WS-G3-08 BAS16WS-G3-18 BAS16WS-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C 150°C (Max)

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