1N4002GPE-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPE-E3/54

Manufacturer No:
1N4002GPE-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPE-E3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for use in a wide range of applications, including power supplies, inverters, converters, and freewheeling diodes. It features a robust construction and meets various industry standards, making it a reliable choice for both consumer and automotive applications.

Key Specifications

ParameterValueUnit
Voltage - Peak Reverse (Max)100V
Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5µA@ 100V
Reverse Recovery Time (trr)>500ns, > 200mA (Io)
Capacitance @ Vr, F8pF@ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseDO-204AL (DO-41), Axial
Operating Temperature - Junction-65°C ~ 175°C
RoHS StatusRohs Compliant

Key Features

  • Superectifier Structure: Designed for high reliability and performance.
  • High Peak Reverse Voltage: Up to 100V, making it suitable for various power supply and rectification applications.
  • Low Forward Voltage Drop: Maximum forward voltage of 1.1V at 1A, reducing power losses.
  • Low Reverse Leakage Current: 5µA at 100V, ensuring minimal current leakage.
  • Standard Recovery Time: Greater than 500ns, suitable for standard recovery applications.
  • Rohs Compliant and Lead-Free: Meets environmental and safety standards.
  • Wide Operating Temperature Range: From -65°C to 175°C, suitable for diverse environmental conditions.

Applications

The 1N4002GPE-E3/54 diode is versatile and can be used in a variety of applications, including:

  • Power Supplies: For rectification and voltage regulation.
  • Inverters and Converters: In DC-DC and DC-AC conversion circuits.
  • Freewheeling Diodes: To protect against back EMF in inductive loads.
  • Consumer Electronics: In devices such as TVs, radios, and other household appliances.
  • Automotive Electronics: In vehicle electrical systems and accessories.

Q & A

  1. What is the maximum peak reverse voltage of the 1N4002GPE-E3/54 diode?
    The maximum peak reverse voltage is 100V.
  2. What is the maximum average forward rectified current of the 1N4002GPE-E3/54 diode?
    The maximum average forward rectified current is 1A.
  3. What is the forward voltage drop of the 1N4002GPE-E3/54 diode at 1A?
    The forward voltage drop is 1.1V at 1A.
  4. What is the reverse recovery time of the 1N4002GPE-E3/54 diode?
    The reverse recovery time is greater than 500ns, with a current of more than 200mA.
  5. Is the 1N4002GPE-E3/54 diode RoHS compliant?
    Yes, the diode is RoHS compliant and lead-free.
  6. What is the operating temperature range of the 1N4002GPE-E3/54 diode?
    The operating temperature range is from -65°C to 175°C.
  7. What type of package does the 1N4002GPE-E3/54 diode come in?
    The diode comes in a DO-204AL (DO-41) or axial package.
  8. What are some common applications of the 1N4002GPE-E3/54 diode?
    Common applications include power supplies, inverters, converters, freewheeling diodes, consumer electronics, and automotive electronics.
  9. What is the capacitance of the 1N4002GPE-E3/54 diode at 4V and 1MHz?
    The capacitance is 8pF at 4V and 1MHz.
  10. Is the 1N4002GPE-E3/54 diode suitable for high-reliability applications?
    Yes, it features a superectifier structure designed for high reliability.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.18
1,895

Please send RFQ , we will respond immediately.

Same Series
1N4004GPE-E3/54
1N4004GPE-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4007GP-E3/73
1N4007GP-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPE-E3/73
1N4001GPE-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4001GPEHE3/73
1N4001GPEHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/73
1N4007GPHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4002GPHE3/54
1N4002GPHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4001GPE-E3/91
1N4001GPE-E3/91
DIODE GEN PURP 50V 1A DO204AL
1N4007GPE-E3/91
1N4007GPE-E3/91
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4002GPE-E3/54 1N4003GPE-E3/54 1N4002GPEHE3/54 1N4002GPE-M3/54 1N4001GPE-E3/54 1N4002GP-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Obsolete Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 100 V 100 V 50 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T10CAHE3_A/H
SM6T10CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T22CAHM3/I
SM6T22CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
BAT54A-HE3-18
BAT54A-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
MURS260HE3_A/I
MURS260HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MUR420-M3/54
MUR420-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84C56-E3-18
BZX84C56-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 56V 300MW SOT23-3
BZX384C13-E3-18
BZX384C13-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 200MW SOD323
BZX84C27-G3-08
BZX84C27-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3
BZX84C8V2-G3-08
BZX84C8V2-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3