1N4007GP-E3/53
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GP-E3/53

Manufacturer No:
1N4007GP-E3/53
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GP-E3/53 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, known for its reliability and versatility in various electronic applications. It is designed for use in power supplies, inverters, converters, and as freewheeling diodes in consumer and industrial settings.

Key Specifications

Parameter Value Unit
Maximum DC Reverse Voltage (Vr) 1000 V
Maximum RMS Voltage (Vrms) 700 V
Maximum Average Forward Rectified Current (If(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A
Maximum Instantaneous Forward Voltage (Vf) @ 1 A 1.1 V
Reverse Recovery Time (trr) 2.0 μs
Junction Capacitance @ 4V, 1MHz 8.0 pF
Operating Junction and Storage Temperature Range -65°C to 175°C °C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole

Key Features

  • High Reverse Voltage Capability: Up to 1000 V, making it suitable for high-voltage applications.
  • High Forward Current Rating: Maximum average forward rectified current of 1.0 A.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1 A.
  • Fast Recovery Time: Typical reverse recovery time of 2.0 μs.
  • Wide Operating Temperature Range: From -65°C to 175°C.
  • Standard Recovery Time: Greater than 500 ns, suitable for general-purpose applications.
  • Through-Hole Mounting: DO-204AL (DO-41) axial package for easy integration into various circuits.

Applications

  • Power Supplies: Used in rectification and filtering stages.
  • Inverters and Converters: Suitable for DC-DC and DC-AC conversion applications.
  • Freewheeling Diodes: Used to protect against back EMF in inductive loads.
  • Consumer Electronics: Found in various consumer devices requiring rectification and voltage regulation.
  • Industrial Electronics: Used in control circuits, motor drives, and other industrial applications.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4007GP-E3/53 diode?

    The maximum DC reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007GP-E3/53 diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the typical reverse recovery time of the 1N4007GP-E3/53 diode?

    The typical reverse recovery time is 2.0 μs.

  4. What is the operating junction and storage temperature range of the 1N4007GP-E3/53 diode?

    The operating junction and storage temperature range is from -65°C to 175°C.

  5. What type of package does the 1N4007GP-E3/53 diode come in?

    The diode comes in a DO-204AL (DO-41) axial package.

  6. What is the maximum instantaneous forward voltage of the 1N4007GP-E3/53 diode at 1 A?

    The maximum instantaneous forward voltage at 1 A is 1.1 V.

  7. What is the typical junction capacitance of the 1N4007GP-E3/53 diode?

    The typical junction capacitance is 8.0 pF at 4 V and 1 MHz.

  8. What are some common applications of the 1N4007GP-E3/53 diode?

    Common applications include power supplies, inverters, converters, and as freewheeling diodes in consumer and industrial electronics.

  9. Is the 1N4007GP-E3/53 diode RoHS compliant?

    Yes, the 1N4007GP-E3/53 diode is RoHS compliant.

  10. What is the peak forward surge current rating of the 1N4007GP-E3/53 diode?

    The peak forward surge current rating is 30 A for an 8.3 ms single half sine-wave superimposed on rated load.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
432

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/73
1N4001GP-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-E3/54
1N4002GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4005GPE-E3/54
1N4005GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4007GP-E3/73
1N4007GP-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4002GPE-E3/73
1N4002GPE-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4001GPEHE3/54
1N4001GPEHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4005GPEHE3/54
1N4005GPEHE3/54
DIODE GEN PURP 600V 1A DO204AL
1N4007GPEHE3/54
1N4007GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL
1N4005GPEHE3/53
1N4005GPEHE3/53
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4007GP-E3/53 1N4007GP-E3/54 1N4007GP-E3/73 1N4007GPE-E3/53 1N4007GPHE3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

SM6T36A-M3/52
SM6T36A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T36CA-M3/52
SM6T36CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T39CAHE3_A/H
SM6T39CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T36AHE3/5B
SM6T36AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM15T22CAHE3_A/H
SM15T22CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T39AHM3/H
SM15T39AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
1N4148W-G3-08
1N4148W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
1N4007GPHE3/73
1N4007GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX384C10-E3-08
BZX384C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323
BZX84C62-E3-18
BZX84C62-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX384C20-E3-18
BZX384C20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 200MW SOD323
BZX84B4V3-E3-18
BZX84B4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3