1N4004GPEHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPEHE3/73

Manufacturer No:
1N4004GPEHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPEHE3/73 is a standard recovery rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose rectification and is widely used in various applications such as power supplies, inverters, converters, and freewheeling diodes. It features a glass passivated junction and is housed in a DO-41 (DO-204AL) package, making it suitable for through-hole mounting.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 400 V
Maximum RMS Voltage VRMS 280 V
Maximum DC Blocking Voltage VDC 400 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (tp = 8.3 ms) IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C
Package DO-41 (DO-204AL)
Mounting Style Through Hole

Key Features

  • High Current Capability: The diode can handle a maximum average forward rectified current of 1.0 A and a peak forward surge current of up to 30 A for 8.3 ms.
  • Low Forward Voltage Drop: It has a maximum instantaneous forward voltage of 1.1 V, ensuring efficient operation.
  • Surge Overload Rating: The diode is capable of withstanding surge overload conditions, making it robust for various applications.
  • Lead Free Finish and RoHS Compliant: The diode is lead-free and compliant with RoHS standards, ensuring environmental safety.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -50°C to +150°C, making it suitable for diverse environments.
  • Glass Passivated Junction: The glass passivated junction construction enhances the diode's reliability and performance.

Applications

The 1N4004GPEHE3/73 diode is versatile and can be used in a variety of applications, including:

  • Power Supplies: For rectification and voltage regulation.
  • Inverters and Converters: To convert AC to DC or DC to AC efficiently.
  • Freewheeling Diodes: To protect circuits from back EMF in inductive loads.
  • Automotive and Industrial Systems: Due to its robustness and wide operating temperature range.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPEHE3/73 diode?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4004GPEHE3/73 diode?

    The peak forward surge current rating is 30 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of this diode?

    The maximum instantaneous forward voltage is 1.1 V.

  5. Is the 1N4004GPEHE3/73 diode RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  6. What is the operating temperature range of the 1N4004GPEHE3/73 diode?

    The operating temperature range is -50°C to +150°C.

  7. What type of package does the 1N4004GPEHE3/73 diode come in?

    The diode is housed in a DO-41 (DO-204AL) package.

  8. What are some common applications for the 1N4004GPEHE3/73 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diodes in automotive and industrial systems.

  9. Does the 1N4004GPEHE3/73 diode have any special construction features?

    Yes, it features a glass passivated junction construction.

  10. What is the typical thermal resistance of the 1N4004GPEHE3/73 diode?

    The typical thermal resistance (RθJA) is 50 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
121

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/73
1N4001GP-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002GP-E3/54
1N4002GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4005GPE-E3/54
1N4005GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4003GP-E3/73
1N4003GP-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4007GPE-E3/73
1N4007GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPEHE3/73
1N4001GPEHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/73
1N4007GPHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPEHE3/54
1N4001GPEHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4005GPE-E3/53
1N4005GPE-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4005GPEHE3/53
1N4005GPEHE3/53
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4004GPEHE3/73 1N4004GPHE3/73 1N4005GPEHE3/73 1N4004GPEHE3/93 1N4004GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM6T68A-E3/5B
SM6T68A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T33CAHM3_A/I
SM6T33CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T30AHE3_A/H
SM15T30AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM15T22CAHE3_A/H
SM15T22CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
BAT54S-E3-08
BAT54S-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
MBRB2060CTHE3_B/P
MBRB2060CTHE3_B/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AB
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C5V6-HE3-08
BZX84C5V6-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 300MW SOT23-3
BZX84B3V9-E3-08
BZX84B3V9-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX84C51-HE3-18
BZX84C51-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX84B18-G3-18
BZX84B18-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX384B10-G3-18
BZX384B10-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323