1N4004GPEHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPEHE3/73

Manufacturer No:
1N4004GPEHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPEHE3/73 is a standard recovery rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose rectification and is widely used in various applications such as power supplies, inverters, converters, and freewheeling diodes. It features a glass passivated junction and is housed in a DO-41 (DO-204AL) package, making it suitable for through-hole mounting.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 400 V
Maximum RMS Voltage VRMS 280 V
Maximum DC Blocking Voltage VDC 400 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (tp = 8.3 ms) IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C
Package DO-41 (DO-204AL)
Mounting Style Through Hole

Key Features

  • High Current Capability: The diode can handle a maximum average forward rectified current of 1.0 A and a peak forward surge current of up to 30 A for 8.3 ms.
  • Low Forward Voltage Drop: It has a maximum instantaneous forward voltage of 1.1 V, ensuring efficient operation.
  • Surge Overload Rating: The diode is capable of withstanding surge overload conditions, making it robust for various applications.
  • Lead Free Finish and RoHS Compliant: The diode is lead-free and compliant with RoHS standards, ensuring environmental safety.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -50°C to +150°C, making it suitable for diverse environments.
  • Glass Passivated Junction: The glass passivated junction construction enhances the diode's reliability and performance.

Applications

The 1N4004GPEHE3/73 diode is versatile and can be used in a variety of applications, including:

  • Power Supplies: For rectification and voltage regulation.
  • Inverters and Converters: To convert AC to DC or DC to AC efficiently.
  • Freewheeling Diodes: To protect circuits from back EMF in inductive loads.
  • Automotive and Industrial Systems: Due to its robustness and wide operating temperature range.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPEHE3/73 diode?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4004GPEHE3/73 diode?

    The peak forward surge current rating is 30 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of this diode?

    The maximum instantaneous forward voltage is 1.1 V.

  5. Is the 1N4004GPEHE3/73 diode RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  6. What is the operating temperature range of the 1N4004GPEHE3/73 diode?

    The operating temperature range is -50°C to +150°C.

  7. What type of package does the 1N4004GPEHE3/73 diode come in?

    The diode is housed in a DO-41 (DO-204AL) package.

  8. What are some common applications for the 1N4004GPEHE3/73 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diodes in automotive and industrial systems.

  9. Does the 1N4004GPEHE3/73 diode have any special construction features?

    Yes, it features a glass passivated junction construction.

  10. What is the typical thermal resistance of the 1N4004GPEHE3/73 diode?

    The typical thermal resistance (RθJA) is 50 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
121

Please send RFQ , we will respond immediately.

Same Series
1N4004GP-E3/54
1N4004GP-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4005GPE-E3/54
1N4005GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4001GPHE3/73
1N4001GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPEHE3/73
1N4005GPEHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/54
1N4007GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPEHE3/91
1N4001GPEHE3/91
DIODE GEN PURP 50V 1A DO204AL
1N4003GPEHE3/53
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL
1N4001GPE-E3/91
1N4001GPE-E3/91
DIODE GEN PURP 50V 1A DO204AL
1N4007GPE-E3/91
1N4007GPE-E3/91
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4004GPEHE3/73 1N4004GPHE3/73 1N4005GPEHE3/73 1N4004GPEHE3/93 1N4004GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T150AHM3_A/I
SM6T150AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T39CAHE3/52
SM6T39CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
BAT54A-HE3-18
BAT54A-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
MBR20H100CTG-E3/4W
MBR20H100CTG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DUAL CC TO220
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
MURS120-E3/5BT
MURS120-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
LL4150-M-08
LL4150-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 600MA SOD80
BAT54W-G3-18
BAT54W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N5245B-TR
1N5245B-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84B3V3-HE3-08
BZX84B3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3