1N4004GPE-E3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPE-E3/73

Manufacturer No:
1N4004GPE-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPE-E3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various electrical and electronic applications. It is known for its reliability and performance in rectification tasks.

The 1N4004GPE-E3/73 is packaged in a DO-204AL (DO-41) case, making it suitable for through-hole mounting. It is designed to handle a maximum DC blocking voltage of 400V and a maximum average forward rectified current of 1A, making it versatile for use in power supplies, inverters, converters, and freewheeling diode applications.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 400 V
Maximum RMS Voltage (VRMS) 280 V
Maximum DC Blocking Voltage (VDC) 400 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A
Maximum Instantaneous Forward Voltage (VF) @ 1A 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage (IR) 5.0 μA
Typical Junction Capacitance (CJ) @ 4V, 1MHz 15 pF
Operating Temperature - Junction -65°C to 175°C °C
Package / Case DO-204AL (DO-41)
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • High Voltage Handling: The diode can handle a maximum repetitive peak reverse voltage of 400V, making it suitable for high-voltage applications.
  • High Current Capability: It can handle a maximum average forward rectified current of 1A, which is adequate for many power supply and converter applications.
  • Low Forward Voltage Drop: The maximum instantaneous forward voltage is 1.1V at 1A, reducing power losses in the circuit.
  • Low Reverse Current: The diode has a low DC reverse current of 5.0 μA at the rated DC blocking voltage, minimizing leakage current.
  • Wide Operating Temperature Range: The diode operates over a junction temperature range of -65°C to 175°C, making it suitable for various environmental conditions.
  • Lead-Free and RoHS Compliant: The diode is lead-free and RoHS compliant, ensuring it meets current environmental and safety standards.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage high-voltage and high-current flows.
  • Freewheeling Diodes: Used as freewheeling diodes to protect circuits from back EMF generated by inductive loads.
  • General Rectification: Suitable for general-purpose rectification in various electronic and electrical systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPE-E3/73 diode?

    The maximum repetitive peak reverse voltage is 400V.

  2. What is the maximum average forward rectified current of the 1N4004GPE-E3/73 diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the maximum instantaneous forward voltage of the 1N4004GPE-E3/73 diode at 1A?

    The maximum instantaneous forward voltage at 1A is 1.1V.

  4. What is the typical junction capacitance of the 1N4004GPE-E3/73 diode?

    The typical junction capacitance is 15 pF at 4V and 1MHz.

  5. What is the operating temperature range of the 1N4004GPE-E3/73 diode?

    The operating temperature range is -65°C to 175°C.

  6. Is the 1N4004GPE-E3/73 diode lead-free and RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  7. What is the package type of the 1N4004GPE-E3/73 diode?

    The diode is packaged in a DO-204AL (DO-41) case.

  8. What is the mounting type of the 1N4004GPE-E3/73 diode?

    The mounting type is through-hole.

  9. What are some common applications of the 1N4004GPE-E3/73 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diode applications.

  10. What is the peak forward surge current rating of the 1N4004GPE-E3/73 diode?

    The peak forward surge current rating is 30 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
322

Please send RFQ , we will respond immediately.

Same Series
1N4007GPE-E3/54
1N4007GPE-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4006GP-E3/54
1N4006GP-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4003GP-E3/54
1N4003GP-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4005GPE-E3/54
1N4005GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N5406GP-E3/54
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD
1N4002GPE-E3/73
1N4002GPE-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4003GPHE3/73
1N4003GPHE3/73
DIODE GEN PURP 200V 1A DO204AL
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4006GPHE3/73
1N4006GPHE3/73
DIODE GEN PURP 800V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4006GPHE3/54
1N4006GPHE3/54
DIODE GEN PURP 800V 1A DO204AL
1N5407GP-E3/73
1N5407GP-E3/73
DIODE GEN PURP 800V 3A DO201AD

Similar Products

Part Number 1N4004GPE-E3/73 1N4004GPEHE3/73 1N4005GPE-E3/73 1N4004GPE-E3/93 1N4004GPE-M3/73 1N4004GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Obsolete Active Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 400 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM15T30AHE3_A/H
SM15T30AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM15T22CAHM3_A/H
SM15T22CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T18AHM3/H
SM15T18AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A ITO220AB
MURD620CTTRL
MURD620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 3A DPAK
BAV21-TR
BAV21-TR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA DO35
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BAS16-E3-18
BAS16-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C39-HE3-08
BZX84C39-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX84B18-HE3-08
BZX84B18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3