1N4004GPE-E3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPE-E3/73

Manufacturer No:
1N4004GPE-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPE-E3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various electrical and electronic applications. It is known for its reliability and performance in rectification tasks.

The 1N4004GPE-E3/73 is packaged in a DO-204AL (DO-41) case, making it suitable for through-hole mounting. It is designed to handle a maximum DC blocking voltage of 400V and a maximum average forward rectified current of 1A, making it versatile for use in power supplies, inverters, converters, and freewheeling diode applications.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 400 V
Maximum RMS Voltage (VRMS) 280 V
Maximum DC Blocking Voltage (VDC) 400 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A
Maximum Instantaneous Forward Voltage (VF) @ 1A 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage (IR) 5.0 μA
Typical Junction Capacitance (CJ) @ 4V, 1MHz 15 pF
Operating Temperature - Junction -65°C to 175°C °C
Package / Case DO-204AL (DO-41)
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • High Voltage Handling: The diode can handle a maximum repetitive peak reverse voltage of 400V, making it suitable for high-voltage applications.
  • High Current Capability: It can handle a maximum average forward rectified current of 1A, which is adequate for many power supply and converter applications.
  • Low Forward Voltage Drop: The maximum instantaneous forward voltage is 1.1V at 1A, reducing power losses in the circuit.
  • Low Reverse Current: The diode has a low DC reverse current of 5.0 μA at the rated DC blocking voltage, minimizing leakage current.
  • Wide Operating Temperature Range: The diode operates over a junction temperature range of -65°C to 175°C, making it suitable for various environmental conditions.
  • Lead-Free and RoHS Compliant: The diode is lead-free and RoHS compliant, ensuring it meets current environmental and safety standards.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage high-voltage and high-current flows.
  • Freewheeling Diodes: Used as freewheeling diodes to protect circuits from back EMF generated by inductive loads.
  • General Rectification: Suitable for general-purpose rectification in various electronic and electrical systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPE-E3/73 diode?

    The maximum repetitive peak reverse voltage is 400V.

  2. What is the maximum average forward rectified current of the 1N4004GPE-E3/73 diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the maximum instantaneous forward voltage of the 1N4004GPE-E3/73 diode at 1A?

    The maximum instantaneous forward voltage at 1A is 1.1V.

  4. What is the typical junction capacitance of the 1N4004GPE-E3/73 diode?

    The typical junction capacitance is 15 pF at 4V and 1MHz.

  5. What is the operating temperature range of the 1N4004GPE-E3/73 diode?

    The operating temperature range is -65°C to 175°C.

  6. Is the 1N4004GPE-E3/73 diode lead-free and RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  7. What is the package type of the 1N4004GPE-E3/73 diode?

    The diode is packaged in a DO-204AL (DO-41) case.

  8. What is the mounting type of the 1N4004GPE-E3/73 diode?

    The mounting type is through-hole.

  9. What are some common applications of the 1N4004GPE-E3/73 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diode applications.

  10. What is the peak forward surge current rating of the 1N4004GPE-E3/73 diode?

    The peak forward surge current rating is 30 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
322

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/54
1N4001GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4004GPE-E3/54
1N4004GPE-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4003GPE-E3/54
1N4003GPE-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4005GP-E3/73
1N4005GP-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4001GPE-E3/73
1N4001GPE-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4001GPHE3/73
1N4001GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4001GPEHE3/91
1N4001GPEHE3/91
DIODE GEN PURP 50V 1A DO204AL
1N4004GPEHE3/91
1N4004GPEHE3/91
DIODE GEN PURP 400V 1A DO204AL
1N4007GP-E3/53
1N4007GP-E3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4004GPE-E3/73 1N4004GPEHE3/73 1N4005GPE-E3/73 1N4004GPE-E3/93 1N4004GPE-M3/73 1N4004GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Obsolete Active Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 400 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T6V8CA-E3/5B
SM6T6V8CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T36CA-E3/57T
SM15T36CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T150CAHE3_A/I
SM15T150CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAS70-04-E3-08
BAS70-04-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
MBR1545CT801HE3/45
MBR1545CT801HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
SS14HE3_B/I
SS14HE3_B/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C4V3-E3-08
BZX84C4V3-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84C62-G3-18
BZX84C62-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX384B16-G3-18
BZX384B16-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323