1N4004GP-E3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GP-E3/73

Manufacturer No:
1N4004GP-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GP-E3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the SUPERECTIFIER® series and is designed for use in various consumer and industrial applications, including power supplies, inverters, converters, and freewheeling diodes. It features a glass-passivated junction and a molded epoxy body, ensuring high reliability and durability.

Key Specifications

ParameterValueUnit
Maximum DC Reverse Voltage (VDC)400V
Maximum Average Forward Rectified Current (IF(AV))1.0A
Peak Forward Surge Current (IFSM)30A
Maximum Instantaneous Forward Voltage (VF)1.1V
Reverse Recovery Time (trr)2.0μs
Junction Capacitance (CJ)8.0pF
Operating Junction Temperature Range-65 to +175°C
PackageDO-204AL (DO-41), Through Hole

Key Features

  • Superectifier Structure: Designed for high reliability applications.
  • Glass-Passivated Junction: Ensures low leakage current and high forward surge capability.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1 A.
  • Low Leakage Current: Typical reverse current less than 5.0 μA at rated DC blocking voltage.
  • High Forward Surge Capability: Peak forward surge current of 30 A for 8.3 ms single half sine-wave.
  • RoHS-Compliant: Meets environmental standards.
  • Molded Epoxy Body: Meets UL 94 V-0 flammability rating.

Applications

The 1N4004GP-E3/73 is suitable for general-purpose rectification in various applications, including:

  • Power supplies
  • Inverters
  • Converters
  • Freewheeling diodes for consumer applications

Q & A

  1. What is the maximum DC reverse voltage of the 1N4004GP-E3/73 diode?
    The maximum DC reverse voltage is 400 V.
  2. What is the maximum average forward rectified current of this diode?
    The maximum average forward rectified current is 1.0 A.
  3. What is the peak forward surge current of the 1N4004GP-E3/73?
    The peak forward surge current is 30 A for 8.3 ms single half sine-wave.
  4. What is the maximum instantaneous forward voltage of this diode?
    The maximum instantaneous forward voltage is 1.1 V at 1 A.
  5. What is the reverse recovery time of the 1N4004GP-E3/73?
    The reverse recovery time is 2.0 μs.
  6. What is the junction capacitance of this diode?
    The junction capacitance is 8.0 pF at 4 V and 1 MHz.
  7. What is the operating junction temperature range of the 1N4004GP-E3/73?
    The operating junction temperature range is -65 to +175 °C.
  8. What type of package does the 1N4004GP-E3/73 come in?
    The diode comes in a DO-204AL (DO-41) through-hole package.
  9. Is the 1N4004GP-E3/73 RoHS-compliant?
    Yes, the diode is RoHS-compliant.
  10. What are some typical applications of the 1N4004GP-E3/73 diode?
    Typical applications include power supplies, inverters, converters, and freewheeling diodes for consumer applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.39
1,867

Please send RFQ , we will respond immediately.

Same Series
1N4004GP-E3/54
1N4004GP-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4003GP-E3/54
1N4003GP-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4002GPE-E3/54
1N4002GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4001GPE-E3/73
1N4001GPE-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4004GP-E3/73
1N4004GP-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4006GPHE3/73
1N4006GPHE3/73
DIODE GEN PURP 800V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4002GPHE3/54
1N4002GPHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GPHE3/54
1N4003GPHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4001GPHE3/54
1N4001GPHE3/54
DIODE GEN PURP 50V 1A DO204AL

Similar Products

Part Number 1N4004GP-E3/73 1N4005GP-E3/73 1N4004GPE-E3/73 1N4004GPHE3/73 1N4004GP-M3/73 1N4002GP-E3/73 1N4003GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Obsolete Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 400 V 400 V 100 V 200 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 100 V 5 µA @ 200 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T18CA-M3/5B
SM6T18CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T36A-M3/9AT
SM15T36A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
1.5KE6.8A-E3/73
1.5KE6.8A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T10AHE3/5B
SM6T10AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T12AHM3_A/H
SM15T12AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T18CAHM3/I
SM15T18CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
MURD620CTTR
MURD620CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 3A DPAK
1N4004GPE-E3/54
1N4004GPE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BAT54WS-G3-08
BAT54WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX84C3V9-G3-08
BZX84C3V9-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3