PMEG2015EPK,315
  • Share:

NXP USA Inc. PMEG2015EPK,315

Manufacturer No:
PMEG2015EPK,315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA PMEG2015EPK - RECTI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG2015EPK,315 is a 20 V, 1.5 A low forward voltage drop (VF) Schottky barrier rectifier produced by Nexperia (formerly part of NXP USA Inc.). This component is designed for high-efficiency applications and features an integrated guard ring for stress protection. It is encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
Voltage - DC Reverse (Vr) (Max)20 V
Current - Average Rectified (Io)1.5 A
Forward Voltage Drop (VF) (Max)0.55 V (typical at 1.5 A)
Package TypeLeadless ultra small SOD1608 (DFN1608D-2)
PackagingTape & Reel (TR), Cut Tape (CT)
Part StatusActive
TechnologySchottky

Key Features

  • Low forward voltage drop (VF) for high efficiency
  • Integrated guard ring for stress protection
  • Leadless ultra small SOD1608 (DFN1608D-2) package for space-saving designs
  • High current capability of up to 1.5 A
  • Maximum DC reverse voltage of 20 V

Applications

The PMEG2015EPK,315 is suitable for a variety of applications requiring high-efficiency rectification, such as:

  • Power supplies and DC-DC converters
  • Switch-mode power supplies
  • High-frequency switching applications
  • Automotive and industrial power systems

Q & A

  1. What is the maximum DC reverse voltage of the PMEG2015EPK,315?
    The maximum DC reverse voltage is 20 V.
  2. What is the typical forward voltage drop (VF) of this component?
    The typical forward voltage drop is 0.55 V at 1.5 A.
  3. What package type is used for the PMEG2015EPK,315?
    The component is encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) package.
  4. What is the current rating of the PMEG2015EPK,315?
    The current rating is up to 1.5 A.
  5. Is the PMEG2015EPK,315 still an active part?
    Yes, the part status is active.
  6. What technology is used in the PMEG2015EPK,315?
    The technology used is Schottky barrier rectifier.
  7. What are the common applications for the PMEG2015EPK,315?
    Common applications include power supplies, DC-DC converters, high-frequency switching applications, and automotive and industrial power systems.
  8. How is the PMEG2015EPK,315 packaged?
    The component is available in Tape & Reel (TR) and Cut Tape (CT) packaging.
  9. What is the purpose of the integrated guard ring in the PMEG2015EPK,315?
    The integrated guard ring provides stress protection.
  10. Who is the manufacturer of the PMEG2015EPK,315?
    The manufacturer is Nexperia (formerly part of NXP USA Inc.).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1.5A
Voltage - Forward (Vf) (Max) @ If:420 mV @ 1.5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:350 µA @ 10 V
Capacitance @ Vr, F:120pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:DFN1608D-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.12
5,509

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG2015EPK,315 PMEG2005EPK,315 PMEG2010EPK,315
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 20 V
Current - Average Rectified (Io) 1.5A 500mA 1A
Voltage - Forward (Vf) (Max) @ If 420 mV @ 1.5 A 410 mV @ 500 mA 415 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 5 ns 3 ns 4 ns
Current - Reverse Leakage @ Vr 350 µA @ 10 V 130 µA @ 10 V 600 µA @ 20 V
Capacitance @ Vr, F 120pF @ 1V, 1MHz 35pF @ 1V, 1MHz 65pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package DFN1608D-2 DFN1608D-2 DFN1608D-2
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
P89LPC938FDH,529
P89LPC938FDH,529
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
74AHC1G126GW/C4125
74AHC1G126GW/C4125
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
HEF4528BP652
HEF4528BP652
NXP USA Inc.
IC MULTIVIBRATOR
BGU7005/Z/N2115
BGU7005/Z/N2115
NXP USA Inc.
NARROW BAND LOW POWER AMPLIFIER
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
SLRC40001T/OFE,112
SLRC40001T/OFE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO