PMEG2015EPK,315
  • Share:

NXP USA Inc. PMEG2015EPK,315

Manufacturer No:
PMEG2015EPK,315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA PMEG2015EPK - RECTI
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG2015EPK,315 is a 20 V, 1.5 A low forward voltage drop (VF) Schottky barrier rectifier produced by Nexperia (formerly part of NXP USA Inc.). This component is designed for high-efficiency applications and features an integrated guard ring for stress protection. It is encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
Voltage - DC Reverse (Vr) (Max)20 V
Current - Average Rectified (Io)1.5 A
Forward Voltage Drop (VF) (Max)0.55 V (typical at 1.5 A)
Package TypeLeadless ultra small SOD1608 (DFN1608D-2)
PackagingTape & Reel (TR), Cut Tape (CT)
Part StatusActive
TechnologySchottky

Key Features

  • Low forward voltage drop (VF) for high efficiency
  • Integrated guard ring for stress protection
  • Leadless ultra small SOD1608 (DFN1608D-2) package for space-saving designs
  • High current capability of up to 1.5 A
  • Maximum DC reverse voltage of 20 V

Applications

The PMEG2015EPK,315 is suitable for a variety of applications requiring high-efficiency rectification, such as:

  • Power supplies and DC-DC converters
  • Switch-mode power supplies
  • High-frequency switching applications
  • Automotive and industrial power systems

Q & A

  1. What is the maximum DC reverse voltage of the PMEG2015EPK,315?
    The maximum DC reverse voltage is 20 V.
  2. What is the typical forward voltage drop (VF) of this component?
    The typical forward voltage drop is 0.55 V at 1.5 A.
  3. What package type is used for the PMEG2015EPK,315?
    The component is encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) package.
  4. What is the current rating of the PMEG2015EPK,315?
    The current rating is up to 1.5 A.
  5. Is the PMEG2015EPK,315 still an active part?
    Yes, the part status is active.
  6. What technology is used in the PMEG2015EPK,315?
    The technology used is Schottky barrier rectifier.
  7. What are the common applications for the PMEG2015EPK,315?
    Common applications include power supplies, DC-DC converters, high-frequency switching applications, and automotive and industrial power systems.
  8. How is the PMEG2015EPK,315 packaged?
    The component is available in Tape & Reel (TR) and Cut Tape (CT) packaging.
  9. What is the purpose of the integrated guard ring in the PMEG2015EPK,315?
    The integrated guard ring provides stress protection.
  10. Who is the manufacturer of the PMEG2015EPK,315?
    The manufacturer is Nexperia (formerly part of NXP USA Inc.).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1.5A
Voltage - Forward (Vf) (Max) @ If:420 mV @ 1.5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:350 µA @ 10 V
Capacitance @ Vr, F:120pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:DFN1608D-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.12
5,509

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG2015EPK,315 PMEG2005EPK,315 PMEG2010EPK,315
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 20 V
Current - Average Rectified (Io) 1.5A 500mA 1A
Voltage - Forward (Vf) (Max) @ If 420 mV @ 1.5 A 410 mV @ 500 mA 415 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 5 ns 3 ns 4 ns
Current - Reverse Leakage @ Vr 350 µA @ 10 V 130 µA @ 10 V 600 µA @ 20 V
Capacitance @ Vr, F 120pF @ 1V, 1MHz 35pF @ 1V, 1MHz 65pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package DFN1608D-2 DFN1608D-2 DFN1608D-2
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
MK24FN1M0VLL12
MK24FN1M0VLL12
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 100LQFP
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
TJA1028T/5V0/20,11
TJA1028T/5V0/20,11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
SC16C652BIB48,128
SC16C652BIB48,128
NXP USA Inc.
IC ENCODER/DECODER IRDA 48LQFP
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN