1N4002GP-E3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GP-E3/73

Manufacturer No:
1N4002GP-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GP-E3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the SUPERECTIFIER® series and is designed for use in various applications such as power supplies, inverters, converters, and freewheeling diodes. It is particularly suited for consumer and industrial electronics where reliable rectification is essential.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS Voltage VRMS 70 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Typical Reverse Recovery Time trr 2.0 μs μs
Typical Junction Capacitance CJ 8.0 pF pF
Operating Junction and Storage Temperature Range TJ -55 to 175 °C °C
Package DO-41 (DO-204AL)
Mounting Type Through Hole

Key Features

  • High Reliability: The 1N4002GP-E3/73 is designed with high reliability in mind, making it suitable for critical applications.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 1.1 V, this diode minimizes power loss during operation.
  • High Surge Current Capability: It can handle peak forward surge currents up to 30 A for 8.3 ms, ensuring robust performance under transient conditions.
  • Low Reverse Current: The diode has a low maximum DC reverse current of 5.0 μA, reducing leakage and improving overall efficiency.
  • Compact Packaging: The DO-41 (DO-204AL) package is compact and suitable for a wide range of applications where space is limited.
  • RoHS Compliant: The E3 suffix indicates that the diode is RoHS compliant, meeting environmental standards.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Suitable for use in inverter and converter circuits where reliable rectification is crucial.
  • Freewheeling Diodes: Often used as freewheeling diodes to protect circuits from back EMF.
  • Consumer Electronics: Commonly used in consumer electronics such as TVs, radios, and other household appliances.
  • Industrial Electronics: Used in various industrial applications where robust and reliable rectification is required.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4002GP-E3/73 diode?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current of the 1N4002GP-E3/73 diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4002GP-E3/73 diode?

    The peak forward surge current rating is 30 A for 8.3 ms.

  4. What is the typical reverse recovery time of the 1N4002GP-E3/73 diode?

    The typical reverse recovery time is 2.0 μs.

  5. What is the operating junction temperature range of the 1N4002GP-E3/73 diode?

    The operating junction temperature range is -55 to 175 °C.

  6. Is the 1N4002GP-E3/73 diode RoHS compliant?
  7. What type of package does the 1N4002GP-E3/73 diode come in?

    The diode comes in a DO-41 (DO-204AL) package.

  8. What is the maximum instantaneous forward voltage of the 1N4002GP-E3/73 diode?

    The maximum instantaneous forward voltage is 1.1 V.

  9. What are some common applications of the 1N4002GP-E3/73 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diodes in consumer and industrial electronics.

  10. What is the typical junction capacitance of the 1N4002GP-E3/73 diode?

    The typical junction capacitance is 8.0 pF at 4 V and 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
108

Please send RFQ , we will respond immediately.

Same Series
1N4006GP-E3/54
1N4006GP-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4007GP-E3/54
1N4007GP-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPE-E3/54
1N4004GPE-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4001GPE-E3/54
1N4001GPE-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4003GPHE3/73
1N4003GPHE3/73
DIODE GEN PURP 200V 1A DO204AL
1N4005GPEHE3/54
1N4005GPEHE3/54
DIODE GEN PURP 600V 1A DO204AL
1N4007GPEHE3/54
1N4007GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/54
1N4007GPHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4003GPE-E3/53
1N4003GPE-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4005GPEHE3/53
1N4005GPEHE3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GPHE3/53
1N4007GPHE3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPE-E3/91
1N4001GPE-E3/91
DIODE GEN PURP 50V 1A DO204AL

Similar Products

Part Number 1N4002GP-E3/73 1N4003GP-E3/73 1N4002GPE-E3/73 1N4002GPHE3/73 1N4004GP-E3/73 1N4002GP-M3/73 1N4001GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Obsolete Active Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 100 V 100 V 400 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 400 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

SMBJ5.0CA-E3/5B
SMBJ5.0CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM6T150AHM3_A/I
SM6T150AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM15T7V5A-E3/57T
SM15T7V5A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T200CAHM3_A/I
SM15T200CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM6T12AHM3/H
SM6T12AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
BYQ28EF-100-E3/45
BYQ28EF-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A ITO220AB
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MBR10100-E3/4W
MBR10100-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAS40-02V-V-G-08
BAS40-02V-V-G-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 120MA SOD523
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84C3V9-G3-08
BZX84C3V9-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3