1N4001GP-E3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GP-E3/73

Manufacturer No:
1N4001GP-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GP-E3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the SUPERECTIFIER® series, known for its high reliability and robust performance. It is designed for use in various consumer and industrial applications, including power supplies, inverters, converters, and freewheeling diodes. The 1N4001GP-E3/73 features a glass-passivated junction and a DO-41 (DO-204AL) package, making it suitable for through-hole mounting.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 50 V
Maximum RMS Voltage VRMS 35 V
Maximum DC Blocking Voltage VDC 50 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Typical Reverse Recovery Time trr 2.0 μs μs
Typical Junction Capacitance CJ 8.0 pF pF
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C °C
Package DO-41 (DO-204AL)
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • Superectifier Structure: Designed for high reliability applications.
  • Cavity-Free Glass-Passivated Junction: Enhances durability and performance.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1 A.
  • Low Leakage Current: Typical reverse current less than 0.1 μA.
  • High Forward Surge Capability: Peak forward surge current of 30 A for 8.3 ms single half sine-wave.
  • Solderable Leads: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • RoHS Compliant: Lead-free and compliant with RoHS standards.
  • Wide Operating Temperature Range: From -65 °C to +175 °C.

Applications

The 1N4001GP-E3/73 is suitable for various applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes in consumer and industrial electronics.
  • Bridge rectifier applications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4001GP-E3/73?

    The maximum repetitive peak reverse voltage is 50 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the typical reverse recovery time of the 1N4001GP-E3/73?

    The typical reverse recovery time is 2.0 μs.

  4. Is the 1N4001GP-E3/73 RoHS compliant?
  5. What is the operating junction and storage temperature range of this diode?

    The operating junction and storage temperature range is from -65 °C to +175 °C.

  6. What type of package does the 1N4001GP-E3/73 come in?

    The diode comes in a DO-41 (DO-204AL) package.

  7. What is the maximum instantaneous forward voltage of the 1N4001GP-E3/73?

    The maximum instantaneous forward voltage is 1.1 V at 1 A.

  8. What is the peak forward surge current capability of this diode?

    The peak forward surge current is 30 A for an 8.3 ms single half sine-wave.

  9. What are some typical applications of the 1N4001GP-E3/73?

    Typical applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diodes.

  10. Is the 1N4001GP-E3/73 suitable for through-hole mounting?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.53
1,579

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/54
1N4001GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4005GPE-E3/54
1N4005GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N5404GP-E3/54
1N5404GP-E3/54
DIODE GEN PURP 400V 3A DO201AD
1N4001GPEHE3/73
1N4001GPEHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4003GPEHE3/54
1N4003GPEHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4007GPHE3/54
1N4007GPHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPHE3/54
1N4001GPHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-E3/91
1N4002GPE-E3/91
DIODE GEN PURP 100V 1A DO204AL
1N4003GPEHE3/53
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL
1N4007GPE-E3/53
1N4007GPE-E3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4001GP-E3/73 1N4001GPE-E3/73 1N4001GPHE3/73 1N4002GP-E3/73 1N4001GP-M3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

SM15T36CAHE3/9AT
SM15T36CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T200CAHM3_A/I
SM15T200CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM6T150AHM3/I
SM6T150AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T220AHM3/I
SM6T220AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAS40-05-G3-18
BAS40-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MURD620CTTR
MURD620CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 3A DPAK
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84B12-E3-08
BZX84B12-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84C51-E3-18
BZX84C51-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX384C6V8-HE3-08
BZX384C6V8-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX84C36-G3-08
BZX84C36-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 300MW SOT23-3