1N4004GPHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPHE3/54

Manufacturer No:
1N4004GPHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPHE3/54 is a standard recovery rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for general-purpose rectification in various applications, including power supplies, inverters, converters, and freewheeling diodes. It is part of the 1N400x series, known for its reliability and versatility in handling different voltage and current requirements.

Key Specifications

Parameter Value Unit
Part Number 1N4004GPHE3/54 -
Manufacturer Vishay General Semiconductor - Diodes Division -
Package DO-204AL (DO-41) -
Maximum Repetitive Peak Reverse Voltage (VRRM) 400 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A (8.3 ms sine-wave), 45 A (square wave, tp = 1 ms) A
Forward Voltage (VF) 1.1 V
Reverse Current (IR) 5.0 μA μA
Operating Junction Temperature (TJ) -50 to +150 °C
Mounting Style Through Hole -
Termination Style Axial -

Key Features

  • RoHS Compliant: The 1N4004GPHE3/54 is RoHS compliant, making it suitable for use in applications where environmental regulations are stringent.
  • High Surge Current Capability: The diode can handle peak forward surge currents up to 45 A for a square wave with a pulse duration of 1 ms.
  • Low Forward Voltage: It has a forward voltage of 1.1 V at 1 A, which is beneficial for reducing power losses in rectification applications.
  • Wide Operating Temperature Range: The diode operates over a temperature range of -50°C to +150°C, making it versatile for various environmental conditions.
  • Reliable Construction: The DO-41 (DO-204AL) package is made from molded epoxy with a UL 94 V-0 flammability rating, ensuring durability and safety.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage power flow and direction.
  • Freewheeling Diodes: Acts as freewheeling diodes in motor control and other inductive load applications to prevent back-EMF damage.
  • General Rectification: Suitable for general-purpose rectification in various electronic circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPHE3/54 diode?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current of the 1N4004GPHE3/54 diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the forward voltage of the 1N4004GPHE3/54 diode at 1 A?

    The forward voltage is 1.1 V at 1 A.

  4. What is the peak forward surge current capability of the 1N4004GPHE3/54 diode?

    The diode can handle a peak forward surge current of up to 45 A for a square wave with a pulse duration of 1 ms.

  5. What is the operating temperature range of the 1N4004GPHE3/54 diode?

    The operating temperature range is -50°C to +150°C.

  6. Is the 1N4004GPHE3/54 diode RoHS compliant?
  7. What type of package does the 1N4004GPHE3/54 diode use?

    The diode uses a DO-204AL (DO-41) package.

  8. What are some common applications of the 1N4004GPHE3/54 diode?
  9. What is the termination style of the 1N4004GPHE3/54 diode?

    The termination style is axial.

  10. What is the reverse current of the 1N4004GPHE3/54 diode at rated DC blocking voltage?

    The reverse current is 5.0 μA at rated DC blocking voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
572

Please send RFQ , we will respond immediately.

Same Series
1N4003GP-E3/73
1N4003GP-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4007GPE-E3/73
1N4007GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N5407GP-E3/54
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD
1N5406GP-E3/54
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD
1N4004GP-E3/73
1N4004GP-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPEHE3/73
1N4005GPEHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4003GPHE3/54
1N4003GPHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4004GPE-E3/93
1N4004GPE-E3/93
DIODE GEN PURP 400V 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GP-E3/53
1N4007GP-E3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4004GPHE3/54 1N4005GPHE3/54 1N4004GPHM3/54 1N4003GPHE3/54 1N4004GP-E3/54 1N4004GPEHE3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 200 V 400 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs - 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

SM6T150AHE3_A/I
SM6T150AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T36AHE3_A/I
SM6T36AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T100A-E3/5B
SM6T100A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM6T6V8A-E3/5B
SM6T6V8A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T22AHE3/57T
SM15T22AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T12AHM3_A/I
SM15T12AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
MUR420-E3/73
MUR420-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
BAT42W-HE3-18
BAT42W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C10-HE3-08
BZX84C10-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84C18-E3-08
BZX84C18-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84B24-G3-08
BZX84B24-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3
BZX384B10-G3-18
BZX384B10-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323