MUR420-E3/73
  • Share:

Vishay General Semiconductor - Diodes Division MUR420-E3/73

Manufacturer No:
MUR420-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 200V 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR420-E3/73 is a high-performance ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for applications requiring fast recovery times and high current handling capabilities. It features a DO-201AD axial package and is suitable for a wide range of industrial, automotive, and consumer electronics applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current at TA = 80 °C IF(AV) 4.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 150 A
Maximum Instantaneous Forward Voltage at 3.0 A, TJ = 25 °C VF 0.710 V
Maximum Reverse Recovery Time trr 25 ns ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-201AD, Axial
Mounting Type Through Hole

Key Features

  • Ultrafast recovery time of 25 ns, ensuring high efficiency in switching applications.
  • High current handling capability with a maximum average forward rectified current of 4.0 A.
  • Maximum repetitive peak reverse voltage of 200 V, providing robust protection against reverse voltage.
  • Low forward voltage drop of 0.710 V at 3.0 A, reducing power losses.
  • RoHS-compliant and halogen-free, meeting environmental standards.
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

  • Industrial power supplies and converters.
  • Automotive systems requiring high reliability and efficiency.
  • Consumer electronics where fast recovery and low forward voltage are critical.
  • Switching power supplies and DC-DC converters.
  • Rectification and polarity protection in various electronic circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MUR420-E3/73?

    200 V.

  2. What is the maximum average forward rectified current of the MUR420-E3/73?

    4.0 A at TA = 80 °C.

  3. What is the reverse recovery time of the MUR420-E3/73?

    25 ns.

  4. What is the operating junction and storage temperature range of the MUR420-E3/73?

    -65 to +175 °C.

  5. Is the MUR420-E3/73 RoHS-compliant?

    Yes, it is RoHS-compliant and halogen-free.

  6. What type of packaging is available for the MUR420-E3/73?

    13" diameter paper tape and reel, and ammo pack packaging.

  7. What is the maximum forward surge current of the MUR420-E3/73?

    150 A (8.3 ms single half sine-wave).

  8. What is the typical forward voltage drop of the MUR420-E3/73 at 3.0 A?

    0.710 V at TJ = 25 °C.

  9. What are the common applications of the MUR420-E3/73?

    Industrial power supplies, automotive systems, consumer electronics, switching power supplies, and DC-DC converters.

  10. What is the package type of the MUR420-E3/73?

    DO-201AD, Axial.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:890 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.63
408

Please send RFQ , we will respond immediately.

Same Series
MUR420-E3/54
MUR420-E3/54
DIODE GEN PURP 200V 4A DO201AD

Similar Products

Part Number MUR420-E3/73 MUR460-E3/73 MUR420-M3/73 MUR440-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 200 V 400 V
Current - Average Rectified (Io) 4A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 890 mV @ 4 A 1.28 V @ 4 A 890 mV @ 4 A 1.28 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 35 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

SM6T220CA-E3/52
SM6T220CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T68A-E3/5B
SM6T68A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T68CA-M3/52
SM6T68CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T68CA-M3/57T
SM15T68CA-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
1N4002GPE-E3/91
1N4002GPE-E3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
BZX55C3V3-TR
BZX55C3V3-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 500MW DO35
BZX85C15-TAP
BZX85C15-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 1.3W DO204AL
BZX84C4V3-E3-18
BZX84C4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84B2V7-E3-18
BZX84B2V7-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 300MW SOT23-3
BZX84C3V6-G3-18
BZX84C3V6-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 300MW SOT23-3
BZX384B3V0-HE3-08
BZX384B3V0-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323