1N4001GPEHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GPEHE3/73

Manufacturer No:
1N4001GPEHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPEHE3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 through 1N4007 series, which are widely used in various applications requiring rectification of power supplies, inverters, converters, and freewheeling diodes. The 1N4001GPEHE3/73 is known for its high reliability, low forward voltage drop, and high surge current capability, making it a versatile component in electronic circuits.

Key Specifications

Parameter Symbol 1N4001G Unit
Peak Repetitive Reverse Voltage VRRM 50 V
RMS Reverse Voltage VRMS 35 V
Maximum DC Blocking Voltage VDC 50 V
Average Forward Rectified Current IF(AV) 1.0 A
Non-Repetitive Peak Forward Surge Current IFSM 30 A
Forward Voltage at IF = 1.0 A VF 1.1 V
Peak Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Typical Junction Capacitance CJ 15 pF pF
Typical Thermal Resistance Junction to Ambient RθJA 100 °C/W °C/W
Operating Junction Temperature Range TJ -65 to +150 °C °C
Storage Temperature Range TSTG -65 to +150 °C °C

Key Features

  • Diffused Junction: Ensures high current capability and low forward voltage drop.
  • High Surge Current Capability: Can handle non-repetitive peak forward surge currents up to 30 A.
  • Low Reverse Leakage Current: Minimizes current leakage, enhancing overall efficiency.
  • Lead-Free Finish and RoHS Compliant: Meets environmental standards and is suitable for modern electronic designs.
  • Molded Plastic Package (DO-41): Provides a robust and reliable housing for the diode.
  • Solderable Leads: Plated leads are solderable per MIL-STD-202, Method 208, ensuring easy integration into various circuits.

Applications

The 1N4001GPEHE3/73 is suitable for a wide range of applications, including:

  • General Purpose Rectification: Ideal for power supplies, inverters, and converters.
  • Freewheeling Diodes: Used in circuits to prevent backflow of current.
  • Automotive and Industrial Systems: Qualified for use in automotive and industrial environments due to its robust specifications.
  • Consumer Electronics: Can be used in various consumer electronic devices requiring reliable rectification.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001GPEHE3/73?

    The peak repetitive reverse voltage (VRRM) is 50 V.

  2. What is the average forward rectified current rating of this diode?

    The average forward rectified current (IF(AV)) is 1.0 A at an ambient temperature of 75°C.

  3. What is the maximum forward surge current this diode can handle?

    The non-repetitive peak forward surge current (IFSM) is 30 A for an 8.3 ms single half sine-wave.

  4. What is the forward voltage drop at 1.0 A current?

    The forward voltage (VF) at 1.0 A is 1.1 V.

  5. What is the typical junction capacitance of this diode?

    The typical junction capacitance (CJ) is 15 pF measured at 1 MHz and 4.0 V DC.

  6. What is the operating junction temperature range for this diode?

    The operating junction temperature range (TJ) is -65 to +150 °C.

  7. Is the 1N4001GPEHE3/73 RoHS compliant?

    Yes, the 1N4001GPEHE3/73 is lead-free and RoHS compliant.

  8. What type of package does the 1N4001GPEHE3/73 come in?

    The diode comes in a molded plastic DO-41 package.

  9. Are the leads of the 1N4001GPEHE3/73 solderable?

    Yes, the leads are plated and solderable per MIL-STD-202, Method 208.

  10. What are some common applications for the 1N4001GPEHE3/73?

    Common applications include general-purpose rectification, freewheeling diodes, automotive, industrial, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
308

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/73
1N4001GP-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N5407GP-E3/54
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4001GPEHE3/54
1N4001GPEHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4003GPEHE3/54
1N4003GPEHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4004GPEHE3/54
1N4004GPEHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4006GPHE3/54
1N4006GPHE3/54
DIODE GEN PURP 800V 1A DO204AL
1N4001GPHE3/54
1N4001GPHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4001GPEHE3/91
1N4001GPEHE3/91
DIODE GEN PURP 50V 1A DO204AL
1N4003GPE-E3/53
1N4003GPE-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4004GPE-E3/93
1N4004GPE-E3/93
DIODE GEN PURP 400V 1A DO204AL
1N4001GPE-E3/91
1N4001GPE-E3/91
DIODE GEN PURP 50V 1A DO204AL

Similar Products

Part Number 1N4001GPEHE3/73 1N4001GPHE3/73 1N4002GPEHE3/73 1N4001GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL

Related Product By Brand

SM6T12CA-E3/5B
SM6T12CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T10AHE3_A/H
SM6T10AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T27A-E3/5B
SM6T27A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SM6T15CAHM3_A/I
SM6T15CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T18CAHM3/H
SM15T18CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BAV21-TR
BAV21-TR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA DO35
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BAS16-E3-18
BAS16-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT43W-G3-08
BAT43W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
SS14HE3/5AT
SS14HE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
BZX384B12-E3-18
BZX384B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 200MW SOD323