1N4001GPEHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GPEHE3/73

Manufacturer No:
1N4001GPEHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPEHE3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 through 1N4007 series, which are widely used in various applications requiring rectification of power supplies, inverters, converters, and freewheeling diodes. The 1N4001GPEHE3/73 is known for its high reliability, low forward voltage drop, and high surge current capability, making it a versatile component in electronic circuits.

Key Specifications

Parameter Symbol 1N4001G Unit
Peak Repetitive Reverse Voltage VRRM 50 V
RMS Reverse Voltage VRMS 35 V
Maximum DC Blocking Voltage VDC 50 V
Average Forward Rectified Current IF(AV) 1.0 A
Non-Repetitive Peak Forward Surge Current IFSM 30 A
Forward Voltage at IF = 1.0 A VF 1.1 V
Peak Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Typical Junction Capacitance CJ 15 pF pF
Typical Thermal Resistance Junction to Ambient RθJA 100 °C/W °C/W
Operating Junction Temperature Range TJ -65 to +150 °C °C
Storage Temperature Range TSTG -65 to +150 °C °C

Key Features

  • Diffused Junction: Ensures high current capability and low forward voltage drop.
  • High Surge Current Capability: Can handle non-repetitive peak forward surge currents up to 30 A.
  • Low Reverse Leakage Current: Minimizes current leakage, enhancing overall efficiency.
  • Lead-Free Finish and RoHS Compliant: Meets environmental standards and is suitable for modern electronic designs.
  • Molded Plastic Package (DO-41): Provides a robust and reliable housing for the diode.
  • Solderable Leads: Plated leads are solderable per MIL-STD-202, Method 208, ensuring easy integration into various circuits.

Applications

The 1N4001GPEHE3/73 is suitable for a wide range of applications, including:

  • General Purpose Rectification: Ideal for power supplies, inverters, and converters.
  • Freewheeling Diodes: Used in circuits to prevent backflow of current.
  • Automotive and Industrial Systems: Qualified for use in automotive and industrial environments due to its robust specifications.
  • Consumer Electronics: Can be used in various consumer electronic devices requiring reliable rectification.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001GPEHE3/73?

    The peak repetitive reverse voltage (VRRM) is 50 V.

  2. What is the average forward rectified current rating of this diode?

    The average forward rectified current (IF(AV)) is 1.0 A at an ambient temperature of 75°C.

  3. What is the maximum forward surge current this diode can handle?

    The non-repetitive peak forward surge current (IFSM) is 30 A for an 8.3 ms single half sine-wave.

  4. What is the forward voltage drop at 1.0 A current?

    The forward voltage (VF) at 1.0 A is 1.1 V.

  5. What is the typical junction capacitance of this diode?

    The typical junction capacitance (CJ) is 15 pF measured at 1 MHz and 4.0 V DC.

  6. What is the operating junction temperature range for this diode?

    The operating junction temperature range (TJ) is -65 to +150 °C.

  7. Is the 1N4001GPEHE3/73 RoHS compliant?

    Yes, the 1N4001GPEHE3/73 is lead-free and RoHS compliant.

  8. What type of package does the 1N4001GPEHE3/73 come in?

    The diode comes in a molded plastic DO-41 package.

  9. Are the leads of the 1N4001GPEHE3/73 solderable?

    Yes, the leads are plated and solderable per MIL-STD-202, Method 208.

  10. What are some common applications for the 1N4001GPEHE3/73?

    Common applications include general-purpose rectification, freewheeling diodes, automotive, industrial, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
308

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/54
1N4001GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GP-E3/54
1N4002GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4004GPE-E3/54
1N4004GPE-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4007GPE-E3/73
1N4007GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N5407GP-E3/54
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD
1N4002GP-E3/73
1N4002GP-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4006GP-E3/73
1N4006GP-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4003GPE-E3/53
1N4003GPE-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4007GPEHE3/91
1N4007GPEHE3/91
DIODE GEN PURP 1KV 1A DO204AL
1N5407GP-E3/73
1N5407GP-E3/73
DIODE GEN PURP 800V 3A DO201AD

Similar Products

Part Number 1N4001GPEHE3/73 1N4001GPHE3/73 1N4002GPEHE3/73 1N4001GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76

Related Product By Brand

SM6T39A-E3/52
SM6T39A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T12AHE3_A/I
SM6T12AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAS16D-E3-08
BAS16D-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
MURS120-E3/5BT
MURS120-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX384C3V3-HE3-08
BZX384C3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX384C3V3-G3-18
BZX384C3V3-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX84B24-E3-08
BZX84B24-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3
BZX384B15-E3-18
BZX384B15-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323