1N4001GPEHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GPEHE3/73

Manufacturer No:
1N4001GPEHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPEHE3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 through 1N4007 series, which are widely used in various applications requiring rectification of power supplies, inverters, converters, and freewheeling diodes. The 1N4001GPEHE3/73 is known for its high reliability, low forward voltage drop, and high surge current capability, making it a versatile component in electronic circuits.

Key Specifications

Parameter Symbol 1N4001G Unit
Peak Repetitive Reverse Voltage VRRM 50 V
RMS Reverse Voltage VRMS 35 V
Maximum DC Blocking Voltage VDC 50 V
Average Forward Rectified Current IF(AV) 1.0 A
Non-Repetitive Peak Forward Surge Current IFSM 30 A
Forward Voltage at IF = 1.0 A VF 1.1 V
Peak Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Typical Junction Capacitance CJ 15 pF pF
Typical Thermal Resistance Junction to Ambient RθJA 100 °C/W °C/W
Operating Junction Temperature Range TJ -65 to +150 °C °C
Storage Temperature Range TSTG -65 to +150 °C °C

Key Features

  • Diffused Junction: Ensures high current capability and low forward voltage drop.
  • High Surge Current Capability: Can handle non-repetitive peak forward surge currents up to 30 A.
  • Low Reverse Leakage Current: Minimizes current leakage, enhancing overall efficiency.
  • Lead-Free Finish and RoHS Compliant: Meets environmental standards and is suitable for modern electronic designs.
  • Molded Plastic Package (DO-41): Provides a robust and reliable housing for the diode.
  • Solderable Leads: Plated leads are solderable per MIL-STD-202, Method 208, ensuring easy integration into various circuits.

Applications

The 1N4001GPEHE3/73 is suitable for a wide range of applications, including:

  • General Purpose Rectification: Ideal for power supplies, inverters, and converters.
  • Freewheeling Diodes: Used in circuits to prevent backflow of current.
  • Automotive and Industrial Systems: Qualified for use in automotive and industrial environments due to its robust specifications.
  • Consumer Electronics: Can be used in various consumer electronic devices requiring reliable rectification.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001GPEHE3/73?

    The peak repetitive reverse voltage (VRRM) is 50 V.

  2. What is the average forward rectified current rating of this diode?

    The average forward rectified current (IF(AV)) is 1.0 A at an ambient temperature of 75°C.

  3. What is the maximum forward surge current this diode can handle?

    The non-repetitive peak forward surge current (IFSM) is 30 A for an 8.3 ms single half sine-wave.

  4. What is the forward voltage drop at 1.0 A current?

    The forward voltage (VF) at 1.0 A is 1.1 V.

  5. What is the typical junction capacitance of this diode?

    The typical junction capacitance (CJ) is 15 pF measured at 1 MHz and 4.0 V DC.

  6. What is the operating junction temperature range for this diode?

    The operating junction temperature range (TJ) is -65 to +150 °C.

  7. Is the 1N4001GPEHE3/73 RoHS compliant?

    Yes, the 1N4001GPEHE3/73 is lead-free and RoHS compliant.

  8. What type of package does the 1N4001GPEHE3/73 come in?

    The diode comes in a molded plastic DO-41 package.

  9. Are the leads of the 1N4001GPEHE3/73 solderable?

    Yes, the leads are plated and solderable per MIL-STD-202, Method 208.

  10. What are some common applications for the 1N4001GPEHE3/73?

    Common applications include general-purpose rectification, freewheeling diodes, automotive, industrial, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
308

Please send RFQ , we will respond immediately.

Same Series
1N4007GPE-E3/54
1N4007GPE-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4006GP-E3/54
1N4006GP-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4003GP-E3/54
1N4003GP-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4003GP-E3/73
1N4003GP-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4007GPE-E3/73
1N4007GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4007GP-E3/73
1N4007GP-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4002GP-E3/73
1N4002GP-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4006GP-E3/73
1N4006GP-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4002GPEHE3/91
1N4002GPEHE3/91
DIODE GEN PURP 100V 1A DO204AL
1N4003GPE-E3/53
1N4003GPE-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4003GPEHE3/53
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL

Similar Products

Part Number 1N4001GPEHE3/73 1N4001GPHE3/73 1N4002GPEHE3/73 1N4001GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

SM15T36CA-E3/57T
SM15T36CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T220A-M3/52
SM6T220A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T12A-E3/9AT
SM15T12A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM6T220AHM3/I
SM6T220AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAT54S-HE3-08
BAT54S-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BYQ28E-200HE3/45
BYQ28E-200HE3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO220AB
BAT54W-G3-18
BAT54W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4002GPEHE3/73
1N4002GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
1N5245B-TR
1N5245B-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3