1N4001GPE-E3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GPE-E3/73

Manufacturer No:
1N4001GPE-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPE-E3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various applications requiring reliable and efficient rectification. The 1N4001GPE-E3/73 is housed in a DO-204AL (DO-41) package and is designed for through-hole mounting.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 50 V
Maximum RMS Voltage (VRMS) 35 V
Maximum DC Blocking Voltage (VDC) 50 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) - 1 ms 45 A
Maximum Instantaneous Forward Voltage (VF) @ 1 A 1.1 V
Maximum DC Reverse Current (IR) @ 50 V 5.0 μA
Operating Junction Temperature Range -50 to +150 °C
Package DO-204AL (DO-41)
Mounting Type Through Hole

Key Features

  • Low forward voltage drop of 1.1 V at 1 A, ensuring efficient rectification.
  • High forward surge capability, with a peak forward surge current of 45 A for 1 ms.
  • Low leakage current of 5.0 μA at 50 V, reducing power loss.
  • Standard recovery time, suitable for general-purpose applications.
  • Wide operating junction temperature range from -50°C to +150°C.
  • Lead-free and RoHS compliant, making it environmentally friendly.

Applications

The 1N4001GPE-E3/73 is versatile and can be used in various applications, including:

  • General-purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diode applications.
  • Automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4001GPE-E3/73?

    The maximum repetitive peak reverse voltage (VRRM) is 50 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the peak forward surge current of the 1N4001GPE-E3/73 for a 1 ms pulse?

    The peak forward surge current (IFSM) for a 1 ms pulse is 45 A.

  4. What is the maximum instantaneous forward voltage of this diode at 1 A?

    The maximum instantaneous forward voltage (VF) at 1 A is 1.1 V.

  5. What is the operating junction temperature range of the 1N4001GPE-E3/73?

    The operating junction temperature range is from -50°C to +150°C.

  6. Is the 1N4001GPE-E3/73 lead-free and RoHS compliant?

    Yes, the 1N4001GPE-E3/73 is lead-free and RoHS compliant.

  7. What type of package does the 1N4001GPE-E3/73 come in?

    The 1N4001GPE-E3/73 comes in a DO-204AL (DO-41) package.

  8. What is the typical thermal resistance of the 1N4001GPE-E3/73?

    The typical thermal resistance (RθJA) is 50 °C/W.

  9. What are some common applications of the 1N4001GPE-E3/73?

    Common applications include general-purpose rectification in power supplies, inverters, converters, and freewheeling diode applications.

  10. What is the maximum DC reverse current of the 1N4001GPE-E3/73 at 50 V?

    The maximum DC reverse current (IR) at 50 V is 5.0 μA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
448

Please send RFQ , we will respond immediately.

Same Series
1N4007GPE-E3/54
1N4007GPE-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N5407GP-E3/54
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GP-E3/73
1N4004GP-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4006GP-E3/73
1N4006GP-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4006GPHE3/54
1N4006GPHE3/54
DIODE GEN PURP 800V 1A DO204AL
1N4002GPEHE3/91
1N4002GPEHE3/91
DIODE GEN PURP 100V 1A DO204AL
1N4003GPEHE3/53
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL
1N4007GPEHE3/53
1N4007GPEHE3/53
DIODE GEN PURP 1KV 1A DO204AL
1N5407GP-E3/73
1N5407GP-E3/73
DIODE GEN PURP 800V 3A DO201AD

Similar Products

Part Number 1N4001GPE-E3/73 1N4001GPEHE3/73 1N4002GPE-E3/73 1N4001GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Obsolete Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T7V5A-E3/5B
SM6T7V5A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
SM15T7V5AHE3_A/H
SM15T7V5AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
SM15T18CAHM3/H
SM15T18CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM6T36CAHM3/I
SM6T36CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
BAS70-06-HE3-08
BAS70-06-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAV70-HE3-18
BAV70-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BAT54-HE3-18
BAT54-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
1N4001GP-E3/54
1N4001GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAT54WS-HE3-08
BAT54WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
SS14HE3/5AT
SS14HE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
BZX84B2V4-E3-18
BZX84B2V4-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 300MW SOT23-3