1N4007GPE-E3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GPE-E3/73

Manufacturer No:
1N4007GPE-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GPE-E3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for use in various applications such as general-purpose rectification of power supplies, inverters, converters, and freewheeling diodes. It features a molded epoxy body in a DO-204AL (DO-41) case with matte tin-plated leads, ensuring good solderability and reliability. The diode is RoHS-compliant and meets the UL 94 V-0 flammability rating, making it suitable for a wide range of consumer and industrial applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 1000 V
Maximum RMS Voltage VRMS 700 V
Maximum DC Blocking Voltage VDC 1000 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C
Reverse Recovery Time trr 2.0 μs
Junction Capacitance CJ 8.0 pF
Thermal Resistance (Junction to Ambient) RθJA 55 °C/W
Package DO-204AL (DO-41)

Key Features

  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.1 V at 1 A, ensuring efficient operation.
  • High Forward Surge Capability: It can handle peak forward surge currents up to 30 A for 8.3 ms and 45 A for 1 ms square waveform.
  • Low Leakage Current: The maximum DC reverse current is 5.0 μA at the rated DC blocking voltage.
  • RoHS Compliance: The diode is RoHS-compliant, making it suitable for modern electronic designs.
  • Standard Recovery Time: The reverse recovery time is 2.0 μs, which is suitable for many general-purpose applications.
  • Wide Operating Temperature Range: The diode operates over a temperature range of -50°C to +150°C.

Applications

The 1N4007GPE-E3/73 is versatile and can be used in various applications, including:

  • General-purpose rectification of power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Consumer electronics.
  • Industrial power supplies.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007GPE-E3/73 diode?

    1000 V.

  2. What is the maximum average forward rectified current of the diode?

    1.0 A.

  3. What is the peak forward surge current rating of the diode?

    30 A for 8.3 ms single half sine-wave and 45 A for 1 ms square waveform.

  4. What is the maximum instantaneous forward voltage of the diode?

    1.1 V at 1 A.

  5. Is the 1N4007GPE-E3/73 diode RoHS-compliant?
  6. What is the operating junction and storage temperature range of the diode?

    -50°C to +150°C.

  7. What is the reverse recovery time of the diode?

    2.0 μs.

  8. What is the junction capacitance of the diode?

    8.0 pF at 4 V and 1 MHz.

  9. What is the thermal resistance (junction to ambient) of the diode?

    55 °C/W.

  10. In what package is the 1N4007GPE-E3/73 diode available?

    DO-204AL (DO-41).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
210

Please send RFQ , we will respond immediately.

Same Series
1N4001GPE-E3/54
1N4001GPE-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4003GP-E3/73
1N4003GP-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N5407GP-E3/54
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4006GPHE3/73
1N4006GPHE3/73
DIODE GEN PURP 800V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4007GPHE3/54
1N4007GPHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPE-E3/93
1N4004GPE-E3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/91
1N4007GPEHE3/91
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPE-E3/91
1N4001GPE-E3/91
DIODE GEN PURP 50V 1A DO204AL

Similar Products

Part Number 1N4007GPE-E3/73 1N4007GPEHE3/73 1N4007GPE-M3/73 1N4007GP-E3/73 1N4007GPE-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Obsolete Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

SM6T220A-M3/52
SM6T220A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAT54C-E3-08
BAT54C-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
MBR10100CT-E3/45
MBR10100CT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
MURS260HE3_A/I
MURS260HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N5406GP-E3/54
1N5406GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
1N4002GPHE3/73
1N4002GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
BZX84C47-E3-08
BZX84C47-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 47V 300MW SOT23-3
BZX84C51-G3-18
BZX84C51-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX84C62-G3-18
BZX84C62-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84C3V9-G3-08
BZX84C3V9-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX384C2V4-G3-08
BZX384C2V4-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323