1N4007GPE-E3/73
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Vishay General Semiconductor - Diodes Division 1N4007GPE-E3/73

Manufacturer No:
1N4007GPE-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
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iso13485

Product Introduction

Overview

The 1N4007GPE-E3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for use in various applications such as general-purpose rectification of power supplies, inverters, converters, and freewheeling diodes. It features a molded epoxy body in a DO-204AL (DO-41) case with matte tin-plated leads, ensuring good solderability and reliability. The diode is RoHS-compliant and meets the UL 94 V-0 flammability rating, making it suitable for a wide range of consumer and industrial applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 1000 V
Maximum RMS Voltage VRMS 700 V
Maximum DC Blocking Voltage VDC 1000 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C
Reverse Recovery Time trr 2.0 μs
Junction Capacitance CJ 8.0 pF
Thermal Resistance (Junction to Ambient) RθJA 55 °C/W
Package DO-204AL (DO-41)

Key Features

  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.1 V at 1 A, ensuring efficient operation.
  • High Forward Surge Capability: It can handle peak forward surge currents up to 30 A for 8.3 ms and 45 A for 1 ms square waveform.
  • Low Leakage Current: The maximum DC reverse current is 5.0 μA at the rated DC blocking voltage.
  • RoHS Compliance: The diode is RoHS-compliant, making it suitable for modern electronic designs.
  • Standard Recovery Time: The reverse recovery time is 2.0 μs, which is suitable for many general-purpose applications.
  • Wide Operating Temperature Range: The diode operates over a temperature range of -50°C to +150°C.

Applications

The 1N4007GPE-E3/73 is versatile and can be used in various applications, including:

  • General-purpose rectification of power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Consumer electronics.
  • Industrial power supplies.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007GPE-E3/73 diode?

    1000 V.

  2. What is the maximum average forward rectified current of the diode?

    1.0 A.

  3. What is the peak forward surge current rating of the diode?

    30 A for 8.3 ms single half sine-wave and 45 A for 1 ms square waveform.

  4. What is the maximum instantaneous forward voltage of the diode?

    1.1 V at 1 A.

  5. Is the 1N4007GPE-E3/73 diode RoHS-compliant?
  6. What is the operating junction and storage temperature range of the diode?

    -50°C to +150°C.

  7. What is the reverse recovery time of the diode?

    2.0 μs.

  8. What is the junction capacitance of the diode?

    8.0 pF at 4 V and 1 MHz.

  9. What is the thermal resistance (junction to ambient) of the diode?

    55 °C/W.

  10. In what package is the 1N4007GPE-E3/73 diode available?

    DO-204AL (DO-41).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number 1N4007GPE-E3/73 1N4007GPEHE3/73 1N4007GPE-M3/73 1N4007GP-E3/73 1N4007GPE-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Obsolete Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

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