1N4001GPEHE3/91
  • Share:

Vishay General Semiconductor - Diodes Division 1N4001GPEHE3/91

Manufacturer No:
1N4001GPEHE3/91
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GPEHE3/91 is a standard rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 through 1N4007 series, which are known for their high current capability and low-forward voltage drop. The 1N4001GPEHE3/91 is specifically designed to handle a wide range of applications requiring reliable rectification and protection against reverse polarity.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 50 V
Reverse Voltage, Total RMS Value VR(RMS) 35 V
Average Forward Current IF 1 A
Surge Peak Forward Current (8.3ms single half sine wave) IFSM 30 A
Junction Temperature TJ -55 to +150 °C
Storage Temperature TSTG -55 to +150 °C
Forward Voltage @ IF = 1A VFM 1 V
Reverse Current @ TA = +25°C at Rated DC Blocking Voltage IRM 5 µA
Typical Junction Capacitance (at 1MHz, VR = 4.0V) Cj 10 pF
Junction-to-Ambient Thermal Resistance RθJA 80 °C/W

Key Features

  • High current capability with an average forward current of 1A and a non-repetitive peak forward surge current of 30A.
  • Low-forward voltage drop of 1V at 1A forward current.
  • Low reverse leakage current of 5µA at 25°C.
  • Available in DO-41 package with lead-free finish and RoHS compliance.
  • Wide operating temperature range from -55°C to +150°C.

Applications

  • Prevention of reverse polarity problems in circuits.
  • Half-wave and full-wave rectifiers.
  • Protection devices against voltage spikes and surges.
  • Current flow regulators in various electronic circuits).

Q & A

  1. What is the maximum forward current of the 1N4001GPEHE3/91 diode?

    The maximum forward current is 1A).

  2. What is the peak repetitive reverse voltage for the 1N4001GPEHE3/91 diode?

    The peak repetitive reverse voltage is 50V).

  3. What is the surge peak forward current rating for the 1N4001GPEHE3/91 diode?

    The surge peak forward current rating is 30A for an 8.3ms single half sine wave).

  4. What is the typical forward voltage drop at 1A for the 1N4001GPEHE3/91 diode?

    The typical forward voltage drop at 1A is 1V).

  5. What is the junction-to-ambient thermal resistance of the 1N4001GPEHE3/91 diode?

    The junction-to-ambient thermal resistance is 80°C/W).

  6. Is the 1N4001GPEHE3/91 diode RoHS compliant?

    Yes, the 1N4001GPEHE3/91 diode is RoHS compliant and has a lead-free finish).

  7. What are the common applications of the 1N4001GPEHE3/91 diode?

    Common applications include prevention of reverse polarity problems, half-wave and full-wave rectifiers, protection devices, and current flow regulators).

  8. What is the storage temperature range for the 1N4001GPEHE3/91 diode?

    The storage temperature range is from -55°C to +150°C).

  9. What package type is the 1N4001GPEHE3/91 diode available in?

    The 1N4001GPEHE3/91 diode is available in the DO-41 package).

  10. What is the reverse current at 25°C for the 1N4001GPEHE3/91 diode?

    The reverse current at 25°C is 5µA).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
307

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/73
1N4001GP-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4001GP-E3/54
1N4001GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N5406GP-E3/54
1N5406GP-E3/54
DIODE GEN PURP 600V 3A DO201AD
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4004GPHE3/54
1N4004GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/54
1N4007GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4002GPE-E3/91
1N4002GPE-E3/91
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GP-E3/53
1N4007GP-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPE-E3/91
1N4007GPE-E3/91
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4001GPEHE3/91 1N4002GPEHE3/91
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 100 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SMBJ5.0CA-E3/5B
SMBJ5.0CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM6T220CAHM3_A/H
SM6T220CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T6V8CAHM3_A/H
SM6T6V8CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T18AHM3_A/I
SM15T18AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MBR10100CT-E3/45
MBR10100CT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
MBR1545CT801HE3/45
MBR1545CT801HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
1N4148W-HE3-08
1N4148W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
1N4007GPEHE3/91
1N4007GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84C16-E3-08
BZX84C16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323