MURS260-M3/52T
  • Share:

Vishay General Semiconductor - Diodes Division MURS260-M3/52T

Manufacturer No:
MURS260-M3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260-M3/52T is a high-performance, ultrafast recovery rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the MURS260 series and is designed for surface mount applications. It offers excellent characteristics for high-frequency switching and rectification needs, making it suitable for a variety of industrial, automotive, and consumer electronics applications.

Key Specifications

Parameter Value
Maximum Average Rectified Current (Io) 2 A
Maximum DC Reverse Voltage (Vr) 600 V
Maximum Forward Voltage (Vf) @ If 1.45 V @ 2 A
Reverse Recovery Time (trr) 50 ns
Reverse Leakage Current @ Vr 5 µA @ 600 V
Operating Junction Temperature -65°C to 175°C
Package Type DO-214AA (SMB)
Mounting Type Surface Mount

Key Features

  • Ultrafast recovery time of 50 ns, making it ideal for high-frequency applications.
  • Low forward voltage drop of 1.45 V at 2 A, reducing power losses.
  • High DC reverse voltage rating of 600 V, providing robust protection against reverse voltages.
  • Low reverse leakage current of 5 µA at 600 V, minimizing standby power consumption.
  • Broad operating junction temperature range from -65°C to 175°C, suitable for various environmental conditions.
  • Surface mount package (DO-214AA) for easy integration into modern PCB designs.

Applications

  • Industrial power supplies and converters.
  • Automotive systems, including battery charging and power management.
  • Consumer electronics, such as power adapters and switching power supplies.
  • High-frequency switching circuits and rectification applications.
  • General-purpose rectification and polarity protection in various electronic devices.

Q & A

  1. What is the maximum average rectified current of the MURS260-M3/52T?

    The maximum average rectified current is 2 A.

  2. What is the maximum DC reverse voltage rating of this diode?

    The maximum DC reverse voltage rating is 600 V.

  3. What is the forward voltage drop at 2 A for the MURS260-M3/52T?

    The forward voltage drop at 2 A is 1.45 V.

  4. What is the reverse recovery time of this diode?

    The reverse recovery time is 50 ns.

  5. What is the operating junction temperature range for this component?

    The operating junction temperature range is from -65°C to 175°C.

  6. What type of package does the MURS260-M3/52T come in?

    The component comes in a DO-214AA (SMB) surface mount package.

  7. What are some common applications for the MURS260-M3/52T?

    Common applications include industrial power supplies, automotive systems, consumer electronics, and high-frequency switching circuits.

  8. How does the ultrafast recovery time benefit the performance of the MURS260-M3/52T?

    The ultrafast recovery time of 50 ns makes it ideal for high-frequency applications by reducing switching losses and improving overall efficiency.

  9. What is the reverse leakage current at 600 V for this diode?

    The reverse leakage current at 600 V is 5 µA.

  10. Is the MURS260-M3/52T suitable for high-temperature environments?

    Yes, it is suitable for high-temperature environments with an operating junction temperature range from -65°C to 175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.13
4,952

Please send RFQ , we will respond immediately.

Same Series
MURS240-M3/5BT
MURS240-M3/5BT
DIODE GEN PURP 400V 2A DO214AA
MURS260-M3/5BT
MURS260-M3/5BT
DIODE GEN PURP 600V 2A DO214AA
MURS240-M3/52T
MURS240-M3/52T
DIODE GEN PURP 400V 2A DO214AA

Similar Products

Part Number MURS260-M3/52T MURS260-M3/5BT MURS160-M3/52T MURS240-M3/52T MURS260-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 400 V 600 V
Current - Average Rectified (Io) 2A 2A 1A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.45 V @ 2 A 1.25 V @ 1 A 1.45 V @ 2 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL

Related Product By Brand

SM6T12A-M3/5B
SM6T12A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T150AHM3_A/H
SM6T150AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM15T22AHE3/57T
SM15T22AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T22CAHE3_A/I
SM15T22CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
BYQ28EB-200HE3_A/P
BYQ28EB-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
MBRB2060CTHE3_B/P
MBRB2060CTHE3_B/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AB
BAS86-M-08
BAS86-M-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
ZM4734A-GS18
ZM4734A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 1W DO213AB
BZX84C10-HE3-18
BZX84C10-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84B12-HE3-08
BZX84B12-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84B22-HE3-08
BZX84B22-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84B9V1-HE3-08
BZX84B9V1-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 300MW SOT23-3