BAS16D-HE3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS16D-HE3-08

Manufacturer No:
BAS16D-HE3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16D-HE3-08 is a small signal fast switching diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is known for its fast switching capabilities and high reliability. It is packaged in the SOD-123 case, making it suitable for surface mount technology (SMT) assembly. The BAS16D-HE3-08 is AEC-Q101 qualified, ensuring it meets stringent automotive standards, and is also RoHS-compliant, aligning with environmental regulations.

Key Specifications

Parameter Value Unit
Reverse Voltage (VR) 75 V
Repetitive Peak Reverse Voltage (VRRM) 100 V
Forward Current (Continuous) (IF) 300 mA
Non-Repetitive Peak Forward Current (IFSM) at 1 μs 2 A
Power Dissipation on FR-4 Board 280 mW
Thermal Resistance Junction to Ambient Air 440 K/W
Junction Temperature (Tj) 150 °C
Storage Temperature Range (Tstg) -65 to +150 °C
Operating Temperature Range (Top) -55 to +150 °C
Reverse Recovery Time (trr) 6 ns
Diode Capacitance (CD) at VR = 0, f = 1 MHz 1.5 pF

Key Features

  • Fast Switching Diode: The BAS16D-HE3-08 is optimized for fast switching applications, making it suitable for high-frequency circuits.
  • AEC-Q101 Qualified: This diode meets the AEC-Q101 standard, ensuring its reliability and performance in automotive applications.
  • RoHS Compliant: The device is RoHS compliant, adhering to environmental regulations and reducing the use of hazardous substances.
  • High Reliability: The diode features a high level of reliability with a low reverse recovery time and high forward current capability.
  • Surface Mount Package: The SOD-123 package is designed for surface mount technology, facilitating easy integration into modern electronic designs.
  • UL 94 V-0 Flammability Rating: The molding compound used meets the UL 94 V-0 flammability rating, ensuring safety in various applications.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification, the BAS16D-HE3-08 is well-suited for use in automotive electronics, including power management and signal processing circuits.
  • Consumer Electronics: This diode can be used in various consumer electronic devices such as smartphones, tablets, and laptops for voltage regulation and protection.
  • Industrial Control Systems: The diode's fast switching and high reliability make it a good choice for industrial control systems, including motor control and power supplies.
  • Medical Devices: The BAS16D-HE3-08 can be used in medical devices where high reliability and fast switching are critical, such as in medical imaging and diagnostic equipment.

Q & A

  1. What is the reverse voltage rating of the BAS16D-HE3-08?

    The reverse voltage rating of the BAS16D-HE3-08 is 75 V.

  2. What is the maximum forward current for the BAS16D-HE3-08?

    The maximum continuous forward current for the BAS16D-HE3-08 is 300 mA.

  3. Is the BAS16D-HE3-08 RoHS compliant?

    Yes, the BAS16D-HE3-08 is RoHS compliant.

  4. What is the package type of the BAS16D-HE3-08?

    The BAS16D-HE3-08 is packaged in the SOD-123 case.

  5. What is the junction temperature range for the BAS16D-HE3-08?

    The junction temperature range for the BAS16D-HE3-08 is -55°C to +150°C.

  6. What is the reverse recovery time of the BAS16D-HE3-08?

    The reverse recovery time of the BAS16D-HE3-08 is 6 ns.

  7. Is the BAS16D-HE3-08 suitable for automotive applications?

    Yes, the BAS16D-HE3-08 is AEC-Q101 qualified, making it suitable for automotive applications.

  8. What is the power dissipation capability of the BAS16D-HE3-08 on an FR-4 board?

    The power dissipation capability of the BAS16D-HE3-08 on an FR-4 board is 280 mW.

  9. What is the thermal resistance junction to ambient air for the BAS16D-HE3-08?

    The thermal resistance junction to ambient air for the BAS16D-HE3-08 is 440 K/W.

  10. What is the diode capacitance of the BAS16D-HE3-08 at VR = 0 and f = 1 MHz?

    The diode capacitance of the BAS16D-HE3-08 at VR = 0 and f = 1 MHz is 1.5 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.29
837

Please send RFQ , we will respond immediately.

Same Series
BAS16D-HE3-08
BAS16D-HE3-08
DIODE GEN PURP 75V 250MA SOD123
BAS16D-E3-18
BAS16D-E3-18
DIODE GEN PURP 75V 250MA SOD123
BAS16D-HE3-18
BAS16D-HE3-18
DIODE GEN PURP 75V 250MA SOD123

Similar Products

Part Number BAS16D-HE3-08 BAS16D-HE3-18 BAS16-HE3-08 BAS16D-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 150mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SOD-123 TO-236-3, SC-59, SOT-23-3 SOD-123
Supplier Device Package SOD-123 SOD-123 SOT-23-3 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

SM15T36AHE3_A/I
SM15T36AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T100CA-M3/9AT
SM15T100CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T36CAHE3/9AT
SM15T36CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T15CAHM3/H
SM6T15CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
MBR1545CT801HE3/45
MBR1545CT801HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
MBR10100-E3/4W
MBR10100-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BAS40-02V-V-G-08
BAS40-02V-V-G-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 120MA SOD523
BZX384C3V3-G3-18
BZX384C3V3-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX384C6V8-G3-18
BZX384C6V8-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323