BAS16D-HE3-18
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Vishay General Semiconductor - Diodes Division BAS16D-HE3-18

Manufacturer No:
BAS16D-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16D-HE3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is available in a surface mount SOD-123 package. It is RoHS-compliant and AEC-Q101 qualified, making it suitable for automotive and commercial applications. The BAS16D-HE3-18 is known for its ultra-fast switching speed and high conductance, making it an ideal choice for various electronic circuits.

Key Specifications

Parameter Value Unit
Non-repetitive peak reverse voltage (VRM) 100 V
Repetitive peak reverse voltage (VRRM) / Working peak reverse voltage (VRWM) / DC blocking voltage (VR) 75 V
Peak forward surge current (IFSM) - tp = 1 s 1 A
Peak forward surge current (IFSM) - tp = 1 μs 2 A
Average forward current (IF(AV)) - Half wave rectification with resistive load and f ≥ 50 Hz 250 mA
Forward current (IF) 350 mA
Power dissipation (Ptot) - On FR-4 board with recommended soldering footprint 270 mW
Thermal resistance junction to ambient air (RthJA) 460 K/W
Junction temperature (Tj) 125 °C
Storage temperature range (Tstg) -65 to +150 °C
Operating temperature range (Top) -55 to +150 °C
Reverse recovery time (trr) 6 ns
Diode capacitance (CD) - VR = 0, f = 1 MHz 1.5 pF

Key Features

  • Silicon epitaxial planar diode
  • Ultra-fast switching speed (≤ 4 ns)
  • Surface mount package ideally suited for automatic insertion
  • High conductance
  • AEC-Q101 qualified available
  • RoHS-compliant
  • High reliability and stability in various operating conditions

Applications

The BAS16D-HE3-18 diode is suitable for a wide range of applications, including:

  • Automotive systems (due to AEC-Q101 qualification)
  • High-speed switching circuits
  • Rectifier circuits
  • Clamping circuits
  • General-purpose switching applications

Q & A

  1. What is the maximum reverse voltage rating of the BAS16D-HE3-18 diode?

    The maximum reverse voltage rating is 75 V.

  2. What is the average forward current rating of the BAS16D-HE3-18 diode?

    The average forward current rating is 250 mA.

  3. What is the switching speed of the BAS16D-HE3-18 diode?

    The switching speed is ultra-fast, with a reverse recovery time of ≤ 4 ns.

  4. Is the BAS16D-HE3-18 diode RoHS-compliant?

    Yes, the BAS16D-HE3-18 diode is RoHS-compliant.

  5. What is the junction temperature range of the BAS16D-HE3-18 diode?

    The junction temperature range is -55 to +150 °C.

  6. What is the power dissipation of the BAS16D-HE3-18 diode on an FR-4 board?

    The power dissipation is 270 mW on an FR-4 board with the recommended soldering footprint.

  7. Is the BAS16D-HE3-18 diode AEC-Q101 qualified?

    Yes, the BAS16D-HE3-18 diode is AEC-Q101 qualified.

  8. What is the diode capacitance of the BAS16D-HE3-18 at 1 MHz?

    The diode capacitance is 1.5 pF at 1 MHz.

  9. What is the package type of the BAS16D-HE3-18 diode?

    The package type is surface mount SOD-123.

  10. What are some common applications of the BAS16D-HE3-18 diode?

    Common applications include automotive systems, high-speed switching circuits, rectifier circuits, clamping circuits, and general-purpose switching applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
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BAS16D-HE3-18
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Similar Products

Part Number BAS16D-HE3-18 BAS16-HE3-18 BAS16D-E3-18 BAS16D-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 150mA 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 TO-236-3, SC-59, SOT-23-3 SOD-123 SOD-123
Supplier Device Package SOD-123 SOT-23-3 SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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