BAS16-HE3-18
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Vishay General Semiconductor - Diodes Division BAS16-HE3-18

Manufacturer No:
BAS16-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOT23
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The BAS16-HE3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is part of the BAS16 series, which is known for its ultra-fast switching speeds and high conductance. The BAS16-HE3-18 is packaged in a SOD-123 surface mount package, making it ideal for automatic insertion in various electronic circuits.

Key Specifications

Parameter Value Unit
Non-repetitive peak reverse voltage (VRM) 100 V
Repetitive peak reverse voltage (VRRM) / Working peak reverse voltage (VRWM) / DC blocking voltage (VR) 75 V
Peak forward surge current (IFSM) 1 A (tp = 1 s), 2 A (tp = 1 μs) A
Average forward current (IF(AV)) 250 mA mA
Forward current (IF) 350 mA mA
Power dissipation (Ptot) 270 mW (on FR-4 board), 390 mW (infinite heatsink) mW
Thermal resistance junction to ambient air (RthJA) 460 K/W K/W
Thermal resistance junction to lead (RthJL) 320 K/W K/W
Junction temperature (Tj) 125 °C °C
Storage temperature range (Tstg) -65 to +150 °C °C
Operating temperature range (Top) -55 to +150 °C °C
Reverse recovery time (trr) 6 ns ns
Capacitance @ Vr, F 2 pF @ 0V, 1 MHz pF
Package SOD-123
Mounting type Surface Mount

Key Features

  • Ultra-fast switching speed: The BAS16-HE3-18 features ultra-fast switching speeds with a reverse recovery time of 6 ns, making it suitable for high-speed applications.
  • High conductance: This diode offers high conductance, ensuring efficient current flow.
  • AEC-Q101 qualified: The BAS16-HE3-18 is AEC-Q101 qualified, making it suitable for automotive applications.
  • RoHS-compliant: The diode is RoHS-compliant, adhering to environmental standards.
  • Surface mount package: Packaged in a SOD-123 surface mount package, it is ideal for automatic insertion and compact circuit designs.

Applications

  • Automotive systems: Given its AEC-Q101 qualification, this diode is widely used in automotive electronics for various applications such as power management and signal processing.
  • High-speed switching circuits: Its ultra-fast switching speed makes it suitable for high-speed switching applications in telecommunications, computing, and other high-frequency systems.
  • General-purpose rectification: The BAS16-HE3-18 can be used in general-purpose rectification and voltage regulation circuits due to its high reverse voltage rating and low forward voltage drop.

Q & A

  1. What is the maximum reverse voltage rating of the BAS16-HE3-18?

    The maximum reverse voltage rating is 75 V.

  2. What is the average forward current rating of the BAS16-HE3-18?

    The average forward current rating is 250 mA.

  3. What is the reverse recovery time of the BAS16-HE3-18?

    The reverse recovery time is 6 ns.

  4. Is the BAS16-HE3-18 RoHS-compliant?

    Yes, the BAS16-HE3-18 is RoHS-compliant.

  5. What is the package type of the BAS16-HE3-18?

    The package type is SOD-123.

  6. What is the operating temperature range of the BAS16-HE3-18?

    The operating temperature range is -55 to +150 °C.

  7. Is the BAS16-HE3-18 AEC-Q101 qualified?

    Yes, the BAS16-HE3-18 is AEC-Q101 qualified.

  8. What is the maximum junction temperature of the BAS16-HE3-18?

    The maximum junction temperature is 125 °C.

  9. What is the thermal resistance junction to ambient air of the BAS16-HE3-18?

    The thermal resistance junction to ambient air is 460 K/W.

  10. What is the capacitance at 0V and 1 MHz for the BAS16-HE3-18?

    The capacitance at 0V and 1 MHz is 2 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
BAS16-HE3-08
BAS16-HE3-08
DIODE GEN PURP 75V 150MA SOT23
BAS16-HE3-18
BAS16-HE3-18
DIODE GEN PURP 75V 150MA SOT23

Similar Products

Part Number BAS16-HE3-18 BAS16D-HE3-18 BAS16-E3-18 BAS16-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 250mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOD-123 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOD-123 SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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