BAS16D-E3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS16D-E3-08

Manufacturer No:
BAS16D-E3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16D-E3-08 is a small signal fast switching diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose, power, and switching applications. It features a silicon epitaxial planar structure, ensuring high performance and reliability. The BAS16D-E3-08 is available in a surface mount SOD-123 package, making it ideal for automatic insertion in various electronic circuits.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 75 V
Repetitive Peak Reverse Voltage - VRRM 100 V
Forward Current (Continuous) - IF 250 mA
Non-Repetitive Peak Forward Current (t = 1 μs) - IFSM 2 A
Power Dissipation (On FR-4 board) - Ptot 280 mW
Thermal Resistance Junction to Ambient Air - RthJA 440 K/W
Junction Temperature - Tj 150 °C
Storage Temperature Range - Tstg -65 to +150 °C
Operating Temperature Range - Top -55 to +150 °C

Key Features

  • Silicon epitaxial planar diode
  • Ultra-fast switching speed (≤ 4 ns)
  • Surface mount package (SOD-123) ideal for automatic insertion
  • High conductance
  • AEC-Q101 qualified available (for HE3_A versions)
  • RoHS-compliant
  • Molding compound meets UL 94 V-0 flammability rating

Applications

The BAS16D-E3-08 diode is suitable for a variety of applications, including:

  • General-purpose switching circuits
  • Power supply circuits
  • Automotive systems (especially for AEC-Q101 qualified versions)
  • High-frequency switching applications
  • Surface mount technology (SMT) based designs

Q & A

  1. What is the maximum reverse voltage of the BAS16D-E3-08 diode?

    The maximum reverse voltage is 75 V.

  2. What is the continuous forward current rating of the BAS16D-E3-08?

    The continuous forward current rating is 250 mA.

  3. What is the non-repetitive peak forward surge current for a 1 μs pulse?

    The non-repetitive peak forward surge current for a 1 μs pulse is 2 A.

  4. Is the BAS16D-E3-08 RoHS-compliant?
  5. What is the thermal resistance junction to ambient air for the BAS16D-E3-08?

    The thermal resistance junction to ambient air is 440 K/W.

  6. What is the operating temperature range of the BAS16D-E3-08?

    The operating temperature range is -55 to +150 °C.

  7. Is the BAS16D-E3-08 suitable for automotive applications?
  8. What is the package type of the BAS16D-E3-08?

    The package type is SOD-123.

  9. What is the maximum junction temperature of the BAS16D-E3-08?

    The maximum junction temperature is 150 °C.

  10. What is the storage temperature range of the BAS16D-E3-08?

    The storage temperature range is -65 to +150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.27
1,767

Please send RFQ , we will respond immediately.

Same Series
BAS16D-HE3-08
BAS16D-HE3-08
DIODE GEN PURP 75V 250MA SOD123
BAS16D-E3-18
BAS16D-E3-18
DIODE GEN PURP 75V 250MA SOD123
BAS16D-HE3-18
BAS16D-HE3-18
DIODE GEN PURP 75V 250MA SOD123

Similar Products

Part Number BAS16D-E3-08 BAS16D-HE3-08 BAS16D-E3-18 BAS16D-G3-08 BAS16-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 250mA 250mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SOD-123 SOD-123 SOD-123 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOD-123 SOD-123 SOD-123 SOD-123 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SM15T15AHM3_A/I
SM15T15AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T150CAHE3/9AT
SM15T150CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
SM6T10AHE3/5B
SM6T10AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM15T33CAHE3/57T
SM15T33CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
BAS40-02V-V-G-08
BAS40-02V-V-G-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 120MA SOD523
BZX84C10-E3-08
BZX84C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX384C15-G3-08
BZX384C15-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX84C3V3-HE3-18
BZX84C3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323