BAS16D-E3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS16D-E3-08

Manufacturer No:
BAS16D-E3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16D-E3-08 is a small signal fast switching diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose, power, and switching applications. It features a silicon epitaxial planar structure, ensuring high performance and reliability. The BAS16D-E3-08 is available in a surface mount SOD-123 package, making it ideal for automatic insertion in various electronic circuits.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 75 V
Repetitive Peak Reverse Voltage - VRRM 100 V
Forward Current (Continuous) - IF 250 mA
Non-Repetitive Peak Forward Current (t = 1 μs) - IFSM 2 A
Power Dissipation (On FR-4 board) - Ptot 280 mW
Thermal Resistance Junction to Ambient Air - RthJA 440 K/W
Junction Temperature - Tj 150 °C
Storage Temperature Range - Tstg -65 to +150 °C
Operating Temperature Range - Top -55 to +150 °C

Key Features

  • Silicon epitaxial planar diode
  • Ultra-fast switching speed (≤ 4 ns)
  • Surface mount package (SOD-123) ideal for automatic insertion
  • High conductance
  • AEC-Q101 qualified available (for HE3_A versions)
  • RoHS-compliant
  • Molding compound meets UL 94 V-0 flammability rating

Applications

The BAS16D-E3-08 diode is suitable for a variety of applications, including:

  • General-purpose switching circuits
  • Power supply circuits
  • Automotive systems (especially for AEC-Q101 qualified versions)
  • High-frequency switching applications
  • Surface mount technology (SMT) based designs

Q & A

  1. What is the maximum reverse voltage of the BAS16D-E3-08 diode?

    The maximum reverse voltage is 75 V.

  2. What is the continuous forward current rating of the BAS16D-E3-08?

    The continuous forward current rating is 250 mA.

  3. What is the non-repetitive peak forward surge current for a 1 μs pulse?

    The non-repetitive peak forward surge current for a 1 μs pulse is 2 A.

  4. Is the BAS16D-E3-08 RoHS-compliant?
  5. What is the thermal resistance junction to ambient air for the BAS16D-E3-08?

    The thermal resistance junction to ambient air is 440 K/W.

  6. What is the operating temperature range of the BAS16D-E3-08?

    The operating temperature range is -55 to +150 °C.

  7. Is the BAS16D-E3-08 suitable for automotive applications?
  8. What is the package type of the BAS16D-E3-08?

    The package type is SOD-123.

  9. What is the maximum junction temperature of the BAS16D-E3-08?

    The maximum junction temperature is 150 °C.

  10. What is the storage temperature range of the BAS16D-E3-08?

    The storage temperature range is -65 to +150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.27
1,767

Please send RFQ , we will respond immediately.

Same Series
BAS16D-HE3-08
BAS16D-HE3-08
DIODE GEN PURP 75V 250MA SOD123
BAS16D-E3-18
BAS16D-E3-18
DIODE GEN PURP 75V 250MA SOD123
BAS16D-HE3-18
BAS16D-HE3-18
DIODE GEN PURP 75V 250MA SOD123

Similar Products

Part Number BAS16D-E3-08 BAS16D-HE3-08 BAS16D-E3-18 BAS16D-G3-08 BAS16-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 250mA 250mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 SOD-123 SOD-123 SOD-123 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOD-123 SOD-123 SOD-123 SOD-123 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES

Related Product By Brand

SM6T220AHE3_A/H
SM6T220AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T30CA-E3/5B
SM6T30CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T12AHE3_A/H
SM15T12AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T7V5AHE3_A/H
SM15T7V5AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
SM15T68CAHM3/I
SM15T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAS70-05-E3-18
BAS70-05-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS140-M3/52T
MURS140-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO214AA
MURS260-M3/52T
MURS260-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX384B24-G3-18
BZX384B24-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 200MW SOD323