BAS16D-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS16D-G3-08

Manufacturer No:
BAS16D-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16D-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is part of the BAS16D series, known for its silicon epitaxial planar construction. It is AEC-Q101 qualified, ensuring it meets stringent automotive standards. The device is packaged in a SOT-23-3 surface mount package, making it ideal for automatic insertion and use in a variety of electronic circuits.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 75 V
Repetitive Peak Reverse Voltage - VRRM 100 V
Forward Current (Continuous) - IF 300 mA
Non-Repetitive Peak Forward Current (t = 1 μs) - IFSM 2 A
Power Dissipation (On FR-4 board) - Ptot 280 mW
Thermal Resistance Junction to Ambient Air - RthJA 440 K/W
Junction Temperature - Tj 150 °C
Storage Temperature Range - Tstg -65 to +150 °C
Operating Temperature Range - Top -55 to +150 °C
Forward Voltage (IF = 1 mA) - VF 0.715 V
Reverse Recovery Time - trr 6 ns

Key Features

  • Silicon Epitaxial Planar Diode: Ensures high reliability and performance.
  • Fast Switching Speed: With a reverse recovery time of 6 ns, it is suitable for high-speed applications.
  • Surface Mount Package: SOT-23-3 package ideal for automatic insertion and compact designs.
  • AEC-Q101 Qualified: Meets automotive standards for reliability and durability.
  • Low Forward Voltage Drop: Forward voltage as low as 0.715 V at 1 mA.
  • High Conductance: Supports high current handling with minimal voltage drop.
  • Moisture Sensitivity Level (MSL) 1: Ensures robustness against moisture-related failures.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • High-Speed Switching Circuits: Ideal for applications requiring fast switching times.
  • General Purpose Rectification: Can be used in a wide range of rectification and switching circuits.
  • Consumer Electronics: Used in various consumer electronic devices requiring reliable and fast switching diodes.
  • Industrial Control Systems: Suitable for industrial control and automation systems.

Q & A

  1. What is the maximum reverse voltage of the BAS16D-G3-08 diode?

    The maximum reverse voltage is 75 V, with a repetitive peak reverse voltage of 100 V.

  2. What is the forward current rating of the BAS16D-G3-08?

    The continuous forward current rating is 300 mA, and the non-repetitive peak forward current is 2 A for a pulse duration of 1 μs.

  3. What is the thermal resistance junction to ambient air for the BAS16D-G3-08?

    The thermal resistance junction to ambient air is 440 K/W on an FR-4 board with the recommended soldering footprint.

  4. What is the junction temperature range of the BAS16D-G3-08?

    The junction temperature range is -55 to +150 °C.

  5. What is the reverse recovery time of the BAS16D-G3-08?

    The reverse recovery time is 6 ns.

  6. Is the BAS16D-G3-08 AEC-Q101 qualified?

    Yes, the BAS16D-G3-08 is AEC-Q101 qualified, making it suitable for automotive applications).

  7. What is the package type of the BAS16D-G3-08?

    The package type is SOT-23-3, which is a surface mount package).

  8. What is the moisture sensitivity level (MSL) of the BAS16D-G3-08?

    The moisture sensitivity level is MSL 1, indicating high robustness against moisture-related failures).

  9. What are the typical applications of the BAS16D-G3-08?

    The BAS16D-G3-08 is typically used in automotive systems, high-speed switching circuits, general purpose rectification, consumer electronics, and industrial control systems).

  10. What is the storage temperature range for the BAS16D-G3-08?

    The storage temperature range is -65 to +150 °C).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.32
627

Please send RFQ , we will respond immediately.

Same Series
1823764
1823764
TERM BLK 4P SIDE ENT 3.81MM PCB
BAS16D-G3-18
BAS16D-G3-18
DIODE GEN PURP 75V 250MA SOD123

Similar Products

Part Number BAS16D-G3-08 BAS16L-G3-08 BAS16D-G3-18 BAS16-G3-08 BAS16D-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 100 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA (DC) 250mA 150mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 4 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 100 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 0.36pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123 0402 (1006 Metric) SOD-123 TO-236-3, SC-59, SOT-23-3 SOD-123
Supplier Device Package SOD-123 DFN1006-2A SOD-123 SOT-23-3 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T7V5CAHE3_A/I
SM6T7V5CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
BYQ28EF-100-E3/45
BYQ28EF-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A ITO220AB
BAT85S-TAP
BAT85S-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAS16D-E3-08
BAS16D-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BZX84C10-E3-08
BZX84C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84C56-E3-18
BZX84C56-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 56V 300MW SOT23-3
BZX384C6V8-HE3-08
BZX384C6V8-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX84C7V5-G3-08
BZX84C7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3