Overview
The BAS16-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is available in a surface mount SOT-23-3 package, making it ideal for automatic insertion in various electronic circuits.
Key Specifications
| Parameter | Test Condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Non-repetitive peak reverse voltage | - | VRM | 100 | V |
| Repetitive peak reverse voltage / Working peak reverse voltage / DC blocking voltage | - | VRRM / VRWM / VR | 75 | V |
| Peak forward surge current (tp = 1 s) | - | IFSM | 1 | A |
| Peak forward surge current (tp = 1 μs) | - | IFSM | 2 | A |
| Average forward current (Half wave rectification with resistive load and f ≥ 50 Hz) | - | IF(AV) | 250 | mA |
| Forward current | - | IF | 350 | mA |
| Power dissipation (On FR-4 board with recommended soldering footprint) | - | Ptot | 270 | mW |
| Thermal resistance junction to ambient air | - | RthJA | 460 | K/W |
| Junction temperature | - | Tj | 125 | °C |
| Storage temperature range | - | Tstg | -65 to +150 | °C |
| Operating temperature range | - | Top | -55 to +150 | °C |
| Forward voltage (IF = 1 mA) | - | VF | 0.715 | V |
| Forward voltage (IF = 10 mA) | - | VF | 0.855 | V |
| Forward voltage (IF = 50 mA) | - | VF | 1 | V |
| Forward voltage (IF = 150 mA) | - | VF | 1.25 | V |
Key Features
- Silicon epitaxial planar diode
- Ultra-fast switching speed (≤ 4 ns)
- Surface mount package (SOT-23-3) ideally suited for automatic insertion
- High conductance
- AEC-Q101 qualified available (part number on request)
- Moisture sensitivity level (MSL) 1
- RoHS compliant
Applications
- High-speed switching circuits
- General-purpose rectification
- Automotive applications (AEC-Q101 qualified)
- Consumer electronics
- Industrial control systems
Q & A
- What is the maximum reverse voltage rating of the BAS16-G3-08 diode?
The maximum reverse voltage rating is 75 V (VRRM/VRWM/VR).
- What is the average forward current rating of the BAS16-G3-08 diode?
The average forward current rating is 250 mA (Half wave rectification with resistive load and f ≥ 50 Hz).
- What is the thermal resistance junction to ambient air for the BAS16-G3-08 diode?
The thermal resistance junction to ambient air is 460 K/W on an FR-4 board with the recommended soldering footprint.
- Is the BAS16-G3-08 diode RoHS compliant?
- What is the junction temperature range for the BAS16-G3-08 diode?
The junction temperature range is -55 to +150 °C.
- What is the package type of the BAS16-G3-08 diode?
The package type is SOT-23-3.
- What is the forward voltage drop at 150 mA for the BAS16-G3-08 diode?
The forward voltage drop at 150 mA is 1.25 V.
- Is the BAS16-G3-08 diode suitable for automotive applications?
- What is the storage temperature range for the BAS16-G3-08 diode?
The storage temperature range is -65 to +150 °C).
- What is the peak forward surge current rating for the BAS16-G3-08 diode for a pulse duration of 1 μs?
The peak forward surge current rating for a pulse duration of 1 μs is 2 A).
