1N4007GPE-M3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GPE-M3/73

Manufacturer No:
1N4007GPE-M3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GPE-M3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. It belongs to the 1N400x series, which includes diodes with varying maximum repetitive reverse voltages. The 1N4007 is specifically designed for applications requiring a peak inverse voltage (PIV) rating of 1000V. This diode is ideal for low-power applications, including rectification in power supplies, freewheeling diodes, and general current flow regulation.

Key Specifications

Parameter Value Unit
Package Type DO-41 -
Maximum Repetitive Reverse Voltage 1000 V
Forward Voltage 1.1 V
Average Forward Current 1 A
Non-repetitive Max Forward Current 30 A
Reverse Current 5 μA
Max Power Dissipation 3 W
Operating and Storage Temperature Range -55 to +175 °C

Key Features

  • Average forward current of 1A, with non-repetitive peak current up to 30A.
  • Peak repetitive reverse voltage of 1000V.
  • Forward voltage of 1.1V.
  • Reverse current of 5μA, which is negligible.
  • Maximum power dissipation of 3W.
  • Available in DO-41 package.
  • Corrosion-resistant terminals and external surface.
  • Cathode side marked by a polarity band.

Applications

  • Rectification in power supplies to convert AC voltage to DC voltage.
  • Freewheeling diodes in inverter and converter circuits.
  • Protection against reverse polarity problems.
  • Half-wave and full-wave rectifiers.
  • Current flow regulators and general-purpose diode applications.

Q & A

  1. What is the 1N4007GPE-M3/73 diode used for?

    The 1N4007GPE-M3/73 is a rectifier diode used for converting alternating current (AC) to direct current (DC) in power supplies, and for other general-purpose diode applications.

  2. What is the maximum repetitive reverse voltage of the 1N4007GPE-M3/73 diode?

    The maximum repetitive reverse voltage is 1000V.

  3. What is the average forward current of the 1N4007GPE-M3/73 diode?

    The average forward current is 1A.

  4. What is the non-repetitive maximum forward current of the 1N4007GPE-M3/73 diode?

    The non-repetitive maximum forward current is 30A.

  5. What is the reverse current of the 1N4007GPE-M3/73 diode?

    The reverse current is 5μA.

  6. What is the maximum power dissipation of the 1N4007GPE-M3/73 diode?

    The maximum power dissipation is 3W.

  7. In what package is the 1N4007GPE-M3/73 diode available?

    The diode is available in the DO-41 package.

  8. What are some common applications of the 1N4007GPE-M3/73 diode?

    Common applications include rectification in power supplies, freewheeling diodes, protection against reverse polarity, and general current flow regulation.

  9. Can the 1N4007GPE-M3/73 diode be used in high-temperature environments?

    The diode can operate in temperatures ranging from -55°C to +175°C.

  10. How is the cathode side of the 1N4007GPE-M3/73 diode identified?

    The cathode side is marked by a polarity band.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
195

Please send RFQ , we will respond immediately.

Same Series
1N4002-E3/73
1N4002-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4006-E3/54
1N4006-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4002E-E3/54
1N4002E-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003E-E3/54
1N4003E-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4001E-E3/54
1N4001E-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4007-E3/73
1N4007-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4005E-E3/73
1N4005E-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4006E-E3/73
1N4006E-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4001E-E3/73
1N4001E-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002E-E3/53
1N4002E-E3/53
DIODE GEN PURP 100V 1A DO204AL
1N4003-E3/53
1N4003-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4007GPE-M3/73
1N4007GPE-M3/73
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007GPE-M3/73 1N4007GP-M3/73 1N4007GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

SM15T15A-E3/57T
SM15T15A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM6T220A-M3/52
SM6T220A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAS16D-E3-08
BAS16D-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BAT43WS-HE3-18
BAT43WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX384C15-G3-08
BZX384C15-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84C22-E3-18
BZX84C22-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84C68-HE3-08
BZX84C68-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 68V 300MW SOT23-3
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3