1N4007E-E3/53
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007E-E3/53

Manufacturer No:
1N4007E-E3/53
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007E-E3/53 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4007 series and is designed for use in a variety of applications including power supplies, inverters, converters, and freewheeling diodes. The 1N4007E-E3/53 is known for its high reliability and robust performance, making it a popular choice in many electronic circuits.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum DC Blocking Voltage (VDC) 1000 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) - 8.3 ms single half sine-wave 30 A
Maximum Instantaneous Forward Voltage (VF) at 1.0 A 1.1 V
Maximum DC Reverse Current (IR) at Rated DC Blocking Voltage 5.0 μA μA
Operating Junction Temperature (TJ) -50 to +150 °C
Diode Case Style DO-41 (DO-204AL)
No. of Pins 2
Packaging Each
Termination Type Axial Leaded

Key Features

  • High Reverse Voltage Capability: Up to 1000 V, making it suitable for high-voltage applications.
  • High Forward Current Rating: 1 A average forward rectified current.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1 A.
  • High Surge Current Capability: Peak forward surge current of 30 A for 8.3 ms single half sine-wave.
  • Wide Operating Temperature Range: From -50°C to +150°C.
  • RoHS Compliant: Meets environmental regulations.
  • UL 94 V-0 Flammability Rating: Ensures safety in various applications.

Applications

  • Power Supplies: Used in rectification stages of power supplies.
  • Inverters and Converters: Suitable for use in inverter and converter circuits.
  • Freewheeling Diodes: Often used as freewheeling diodes in various power electronic circuits.
  • General Purpose Rectification: Ideal for general-purpose rectification in a wide range of electronic devices.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007E-E3/53 diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007E-E3/53 diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4007E-E3/53 diode?

    The peak forward surge current rating is 30 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of the 1N4007E-E3/53 diode at 1 A?

    The maximum instantaneous forward voltage at 1 A is 1.1 V.

  5. What is the operating junction temperature range of the 1N4007E-E3/53 diode?

    The operating junction temperature range is from -50°C to +150°C.

  6. Is the 1N4007E-E3/53 diode RoHS compliant?

    Yes, the 1N4007E-E3/53 diode is RoHS compliant.

  7. What is the case style of the 1N4007E-E3/53 diode?

    The case style is DO-41 (DO-204AL).

  8. What are the typical applications of the 1N4007E-E3/53 diode?

    Typical applications include power supplies, inverters, converters, and freewheeling diodes.

  9. What is the termination type of the 1N4007E-E3/53 diode?

    The termination type is axial leaded.

  10. Does the 1N4007E-E3/53 diode meet UL 94 V-0 flammability rating?

    Yes, the diode meets the UL 94 V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
29

Please send RFQ , we will respond immediately.

Same Series
1N4001-E3/54
1N4001-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4001-E3/53
1N4001-E3/53
DIODE GEN PURP 50V 1A DO204AL
1N4002-E3/54
1N4002-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4004-E3/54
1N4004-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4002E-E3/54
1N4002E-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003E-E3/54
1N4003E-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4001E-E3/54
1N4001E-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4004E-E3/73
1N4004E-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4001GP-M3/73
1N4001GP-M3/73
DIODE GEN PURP 50V 1A DO204AL
1N4003E-E3/53
1N4003E-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4006-E3/53
1N4006-E3/53
DIODE GEN PURP 800V 1A DO204AL
1N4007GPE-M3/73
1N4007GPE-M3/73
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007E-E3/53 1N4007E-E3/73 1N4007E-E3/54 1N4007-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -55°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM15T36CA-E3/57T
SM15T36CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T15CA-M3/52
SM6T15CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T27AHM3_A/I
SM6T27AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T33AHE3/52
SM6T33AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T10CAHE3_A/H
SM6T10CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
MBR20H100CTG-E3/4W
MBR20H100CTG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DUAL CC TO220
BAT85S-TAP
BAT85S-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
1N4007-E3/54
1N4007-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84C47-E3-08
BZX84C47-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 47V 300MW SOT23-3
BZX84C36-G3-08
BZX84C36-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 300MW SOT23-3
BZX84C7V5-G3-08
BZX84C7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3