1N4007GP-M3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GP-M3/73

Manufacturer No:
1N4007GP-M3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GP-M3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for use in various applications requiring rectification, including power supplies, inverters, converters, and freewheeling diodes. It is part of the 1N400x series, known for its reliability and versatility in handling different voltage and current requirements.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum DC Blocking Voltage (VDC) 1000 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) - 8.3 ms single half sine-wave 30 A
Non-repetitive Peak Forward Surge Current (IFSM) - square waveform, tp = 1 ms 45 A
Maximum Instantaneous Forward Voltage (VF) @ 1 A 1.1 V
Maximum DC Reverse Current (IR) @ 1000 V 5.0 μA
Operating Junction and Storage Temperature Range -55°C to 175°C °C
Package DO-41 (DO-204AL), Axial
Mounting Type Through Hole
Junction Capacitance @ 4 V, 1 MHz 8 pF pF
Reverse Recovery Time (trr) 2 μs μs

Key Features

  • High Voltage Rating: The 1N4007GP-M3/73 has a maximum repetitive peak reverse voltage of 1000 V, making it suitable for high-voltage applications.
  • High Current Capability: It can handle a maximum average forward rectified current of 1.0 A and peak forward surge currents up to 45 A for short durations.
  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.1 V at 1 A, ensuring efficient rectification with minimal voltage drop.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -55°C to 175°C, making it reliable in various environmental conditions.
  • Standard Recovery Time: The reverse recovery time is 2 μs, which is suitable for standard recovery applications.
  • RoHS Compliant: The diode is RoHS compliant, ensuring it meets environmental standards for lead-free products.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Suitable for use in inverter and converter circuits due to its high voltage and current handling capabilities.
  • Freewheeling Diodes: Often used as freewheeling diodes in motor control and power electronic circuits to protect against back EMF.
  • Consumer Electronics: Found in various consumer electronic devices that require reliable rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007GP-M3/73 diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007GP-M3/73?

    The maximum average forward rectified current is 1.0 A.

  3. What is the package type of the 1N4007GP-M3/73 diode?

    The diode is packaged in a DO-41 (DO-204AL) axial case.

  4. What is the operating junction temperature range of the 1N4007GP-M3/73?

    The operating junction temperature range is -55°C to 175°C.

  5. Is the 1N4007GP-M3/73 RoHS compliant?

    Yes, the diode is RoHS compliant.

  6. What is the typical reverse recovery time of the 1N4007GP-M3/73?

    The typical reverse recovery time is 2 μs.

  7. What are some common applications of the 1N4007GP-M3/73 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diodes in motor control circuits.

  8. What is the maximum instantaneous forward voltage of the 1N4007GP-M3/73 at 1 A?

    The maximum instantaneous forward voltage at 1 A is 1.1 V.

  9. What is the peak forward surge current rating of the 1N4007GP-M3/73 for a 1 ms square waveform?

    The peak forward surge current rating for a 1 ms square waveform is 45 A.

  10. What is the junction capacitance of the 1N4007GP-M3/73 at 4 V and 1 MHz?

    The junction capacitance at 4 V and 1 MHz is 8 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
577

Please send RFQ , we will respond immediately.

Same Series
1N4006E-E3/54
1N4006E-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4002-E3/73
1N4002-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004E-E3/54
1N4004E-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4001E-E3/54
1N4001E-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4006-E3/73
1N4006-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4003-E3/73
1N4003-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4007E-E3/53
1N4007E-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4002E-E3/73
1N4002E-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GP-M3/73
1N4004GP-M3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GP-M3/73
1N4005GP-M3/73
DIODE GEN PURP 600V 1A DO204AL
1N4006-E3/53
1N4006-E3/53
DIODE GEN PURP 800V 1A DO204AL
1N4007GP-M3/73
1N4007GP-M3/73
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007GP-M3/73 1N4007GPE-M3/73 1N4007GPHM3/73 1N4006GP-M3/73 1N4007GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T220CA-E3/5B
SM6T220CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T36A-M3/9AT
SM15T36A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T150AHM3/I
SM6T150AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
MBR10100CT-E3/4W
MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
MURB1620CTTRL
MURB1620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
BAS85-GS08
BAS85-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD80
1N4004GPE-E3/54
1N4004GPE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MURS260HE3_A/I
MURS260HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4007GPEHE3/91
1N4007GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX384C5V6-E3-08
BZX384C5V6-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 200MW SOD323
BZX384B7V5-HE3-08
BZX384B7V5-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 200MW SOD323
BZX84C3V9-G3-08
BZX84C3V9-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3