SM6T12A-M3/5B
  • Share:

Vishay General Semiconductor - Diodes Division SM6T12A-M3/5B

Manufacturer No:
SM6T12A-M3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
TVS DIODE 10.2VWM 16.7VC DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SM6T12A-M3/5B is a Transient Voltage Suppressor (TVS) diode manufactured by Vishay General Semiconductor - Diodes Division. This component is part of the SM6T series, designed to protect sensitive electronic equipment against electrostatic discharges, electrical overstress, and voltage transients. The SM6T12A-M3/5B is particularly suited for applications requiring high reliability and stability in various industries, including consumer electronics, telecommunications, automotive, industrial automation, and healthcare.

Key Specifications

Parameter Value Unit
Peak Pulse Power (10/1000 μs) 600 W
Peak Pulse Power (8/20 μs) 4 kW
Stand-off Voltage Range 5 V to 188 V
Breakdown Voltage (VBR) Unidirectional 6.8 V to 220 V
Breakdown Voltage (VBR) Bidirectional 6.8 V to 220 V
Leakage Current at 25 °C 0.2 μA
Leakage Current at 85 °C 1 μA
Maximum Junction Temperature (Tj max) 150 °C
Package Type SMB (DO-214AA)
Lead Finishing Matte tin plated leads
Compliance UL94 V-0, J-STD-020 MSL level 1, J-STD-002, JESD 22-B102 E3, and MIL-STD-750

Key Features

  • Low Profile Package: Ideal for automated placement and suitable for high-end equipment.
  • Glass Passivated Chip Junction: Ensures high reliability and stability.
  • High Power Capability: 600 W peak pulse power with a 10/1000 μs waveform.
  • Low Inductance: Enhances performance in high-speed applications.
  • Unidirectional and Bidirectional Types: Available to suit various application needs.
  • Compliance with Standards: Meets UL94 V-0, J-STD-020 MSL level 1, J-STD-002, JESD 22-B102 E3, and MIL-STD-750 standards.
  • AEC-Q101 Qualified: Available for automotive applications.

Applications

The SM6T12A-M3/5B TVS diode is used in a variety of applications to protect sensitive electronics against voltage transients and electrostatic discharges. These include:

  • Consumer electronics: Protection for smartphones, tablets, and other portable devices.
  • Telecommunications: Used in routers, base stations, and satellite systems.
  • Automotive: Protects electronic systems in vehicles, including infotainment and safety systems.
  • Industrial automation: Safeguards control systems, sensors, and other industrial equipment.
  • Healthcare: Ensures the reliability of medical devices and equipment.
  • Wireless communication devices: Protects against surges and transients in wireless communication systems.

Q & A

  1. What is the peak pulse power capability of the SM6T12A-M3/5B?

    The peak pulse power capability is 600 W with a 10/1000 μs waveform and 4 kW with an 8/20 μs waveform.

  2. What is the stand-off voltage range for this TVS diode?

    The stand-off voltage range is from 5 V to 188 V.

  3. What are the leakage current values at different temperatures?

    The leakage current is 0.2 μA at 25 °C and 1 μA at 85 °C.

  4. What is the maximum junction temperature for this component?

    The maximum junction temperature (Tj max) is 150 °C.

  5. What type of package does the SM6T12A-M3/5B come in?

    The component is packaged in an SMB (DO-214AA) package.

  6. Is the SM6T12A-M3/5B compliant with automotive standards?

    Yes, it is AEC-Q101 qualified for automotive applications.

  7. What are the lead finishing and solderability specifications?

    The leads are matte tin plated and solderable per J-STD-002 and JESD 22-B102 E3.

  8. What standards does the SM6T12A-M3/5B comply with?

    It complies with UL94 V-0, J-STD-020 MSL level 1, J-STD-002, JESD 22-B102 E3, and MIL-STD-750 standards.

  9. Can the SM6T12A-M3/5B be used in bidirectional applications?

    Yes, bidirectional versions are available, denoted by the 'CA' suffix.

  10. What is the typical application of the SM6T12A-M3/5B?

    It is typically used to protect sensitive electronics against voltage transients induced by inductive load switching and lightning.

Product Attributes

Type:Zener
Unidirectional Channels:1
Bidirectional Channels:- 
Voltage - Reverse Standoff (Typ):10.2V
Voltage - Breakdown (Min):11.4V
Voltage - Clamping (Max) @ Ipp:16.7V
Current - Peak Pulse (10/1000µs):36A
Power - Peak Pulse:600W
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMBJ)
0 Remaining View Similar

In Stock

$0.13
5,740

Please send RFQ , we will respond immediately.

Same Series
SM6T39A-E3/52
SM6T39A-E3/52
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T200A-E3/52
SM6T200A-E3/52
TVS DIODE 171VWM 274VC DO214AA
SM6T6V8CA-E3/52
SM6T6V8CA-E3/52
TVS DIODE 5.8VWM 10.5VC DO214AA
SM6T200CA-E3/52
SM6T200CA-E3/52
TVS DIODE 171VWM 274VC DO214AA
SM6T7V5A-M3/5B
SM6T7V5A-M3/5B
TVS DIODE 6.4VWM 11.3VC DO214AA
SM6T10CA-M3/52
SM6T10CA-M3/52
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T220CA-E3/5B
SM6T220CA-E3/5B
TVS DIODE 188VWM 328VC DO214AA
SM6T100AHE3/5B
SM6T100AHE3/5B
TVS DIODE 85.5VWM 137VC DO214AA
SM6T7V5AHE3/5B
SM6T7V5AHE3/5B
TVS DIODE 6.4VWM 11.3VC DO214AA
SM6T39AHE3/52
SM6T39AHE3/52
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T7V5AHE3/52
SM6T7V5AHE3/52
TVS DIODE 6.4VWM 11.3VC DO214AA
SM6T36AHE3/5B
SM6T36AHE3/5B
TVS DIODE 30.8VWM 49.9VC DO214AA

Similar Products

Part Number SM6T12A-M3/5B SM6T15A-M3/5B SM6T18A-M3/5B SM6T12CA-M3/5B SM6T10A-M3/5B SM6T12A-E3/5B SM6T12A-M3/52
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active Active
Type Zener Zener Zener Zener Zener Zener Zener
Unidirectional Channels 1 1 1 - 1 1 1
Bidirectional Channels - - - 1 - - -
Voltage - Reverse Standoff (Typ) 10.2V 12.8V 15.3V 10.2V 8.55V 10.2V 10.2V
Voltage - Breakdown (Min) 11.4V 14.3V 17.1V 11.4V 9.5V 11.4V 11.4V
Voltage - Clamping (Max) @ Ipp 16.7V 21.2V 25.2V 16.7V 14.5V 16.7V 16.7V
Current - Peak Pulse (10/1000µs) 36A 28A 24A 36A 41A 36A 36A
Power - Peak Pulse 600W 600W 600W 600W 600W 600W 600W
Power Line Protection No No No No No No No
Applications General Purpose General Purpose General Purpose General Purpose General Purpose General Purpose General Purpose
Capacitance @ Frequency - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMBJ) DO-214AA (SMBJ) DO-214AA (SMBJ) DO-214AA (SMBJ) DO-214AA (SMBJ) DO-214AA (SMBJ) DO-214AA (SMBJ)

Related Product By Categories

PTVS20VS1UR,115
PTVS20VS1UR,115
Nexperia USA Inc.
TVS DIODE 20VWM 32.4VC CFP3
1SMB24CAT3G
1SMB24CAT3G
onsemi
TVS DIODE 24VWM 38.9VC 425TEPBGA
SMCJ48CA/TR13
SMCJ48CA/TR13
YAGEO
SMCJ, DO-214AB, 48V, 77.4V, REEL
SM6T18A-M3/5B
SM6T18A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T220A-E3/5B
SM6T220A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T22AHM3_A/I
SM6T22AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM6T68AHM3_A/H
SM6T68AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T15AHE3_A/H
SM15T15AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM15T18AHE3_A/H
SM15T18AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
5KP43A-E3/73
5KP43A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 43VWM 69.4VC P600
SM6T39AHE3/5B
SM6T39AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T7V5CAHM3/I
SM6T7V5CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA

Related Product By Brand

SM6T18CA-E3/52
SM6T18CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T36CA-E3/57T
SM15T36CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T150A-E3/5B
SM6T150A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM15T6V8CA-E3/57T
SM15T6V8CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T22CAHM3_A/I
SM15T22CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
LL4148-M-08
LL4148-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
1N4004GPHE3/73
1N4004GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX384B16-G3-18
BZX384B16-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323