BYQ28E-200HE3/45
  • Share:

Vishay General Semiconductor - Diodes Division BYQ28E-200HE3/45

Manufacturer No:
BYQ28E-200HE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY GP 200V 5A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28E-200HE3/45 is a dual common cathode ultrafast rectifier diode array produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast recovery times and high current handling. The device is packaged in a TO-220AB case, which is RoHS-compliant and meets UL 94 V-0 flammability ratings. It is suitable for various industrial and automotive applications where reliability and efficiency are critical.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM200V
Maximum Average Forward Rectified Current at TC = 100 °CIF(AV)5.0 A per diodeA
Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM55A
Reverse Recovery Timetrr25 nsns
Forward Voltage DropVF0.895V
Maximum Junction TemperatureTJ max.150°C
Thermal Resistance (Junction to Ambient)RθJA50°C/W
Thermal Resistance (Junction to Case)RθJC4.5°C/W

Key Features

  • Ultrafast recovery time of 25 ns, making it suitable for high-frequency applications.
  • Dual common cathode configuration in a TO-220AB package.
  • High peak forward surge current of 55 A for transient protection.
  • Low forward voltage drop of 0.895 V, reducing power losses.
  • RoHS-compliant and meets UL 94 V-0 flammability ratings.
  • Matt tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

  • Power supplies and DC/DC converters.
  • Freewheeling diodes and polarity protection.
  • Industrial and automotive applications requiring high reliability and efficiency.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYQ28E-200HE3/45? The maximum repetitive peak reverse voltage is 200 V.
  2. What is the maximum average forward rectified current per diode at TC = 100 °C? The maximum average forward rectified current per diode is 5.0 A.
  3. What is the peak forward surge current of the BYQ28E-200HE3/45? The peak forward surge current is 55 A.
  4. What is the reverse recovery time of this diode? The reverse recovery time is 25 ns.
  5. What is the forward voltage drop of the BYQ28E-200HE3/45? The forward voltage drop is 0.895 V.
  6. What is the maximum junction temperature of this component? The maximum junction temperature is 150 °C.
  7. Is the BYQ28E-200HE3/45 RoHS-compliant? Yes, it is RoHS-compliant.
  8. What type of package does the BYQ28E-200HE3/45 come in? It comes in a TO-220AB package.
  9. What are some common applications for the BYQ28E-200HE3/45? Common applications include power supplies, DC/DC converters, freewheeling diodes, and polarity protection.
  10. What is the thermal resistance from junction to ambient for this diode? The thermal resistance from junction to ambient is 50 °C/W.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
244

Please send RFQ , we will respond immediately.

Same Series
BYQ28E-200-E3/45
BYQ28E-200-E3/45
DIODE ARRAY GP 200V 5A TO220AB
BYQ28E-150-E3/45
BYQ28E-150-E3/45
DIODE ARRAY GP 150V 5A TO220AB
UG10BCT-E3/45
UG10BCT-E3/45
DIODE ARRAY GP 100V 5A TO220AB
UG10CCT-E3/45
UG10CCT-E3/45
DIODE ARRAY GP 150V 5A TO220AB
UGB10BCT-E3/45
UGB10BCT-E3/45
DIODE ARRAY GP 100V 5A TO263AB
UGB10CCT-E3/45
UGB10CCT-E3/45
DIODE ARRAY GP 150V 5A TO263AB
BYQ28EB-150-E3/81
BYQ28EB-150-E3/81
DIODE ARRAY GP 150V 5A TO263AB
UGB10BCT-E3/81
UGB10BCT-E3/81
DIODE ARRAY GP 100V 5A TO263AB
UGB10BCTHE3/81
UGB10BCTHE3/81
DIODE ARRAY GP 100V 5A TO263AB
UGB10CCTHE3/81
UGB10CCTHE3/81
DIODE ARRAY GP 150V 5A TO263AB
UGB10DCTHE3/81
UGB10DCTHE3/81
DIODE ARRAY GP 200V 5A TO263AB
UG10DCTHE3/45
UG10DCTHE3/45
DIODE ARRAY GP 200V 5A TO220AB

Similar Products

Part Number BYQ28E-200HE3/45 BYQ28E-100HE3/45 BYQ28E-200-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 100 V 200 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 100 V 10 µA @ 200 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

MBR20100CT-G1
MBR20100CT-G1
Diodes Incorporated
DIODE SCHOTTKY 100V 10A TO220AB
BYV44-500,127
BYV44-500,127
WeEn Semiconductors
DIODE ARRAY GP 500V 30A TO220AB
BAV70S/DG/B3135
BAV70S/DG/B3135
NXP USA Inc.
RECTIFIER DIODE
BAV23CA
BAV23CA
Diotec Semiconductor
DIODE SOT-23 250V 0.22A 50NS
BAT54CLT1G
BAT54CLT1G
onsemi
DIODE ARRAY SCHOTTKY 30V SOT23-3
SBAV70LT3G
SBAV70LT3G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
STPS40170CT
STPS40170CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO220
BAV23C-G3-18
BAV23C-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
BAS40-04E6327
BAS40-04E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BAV70DXV6T5
BAV70DXV6T5
onsemi
DIODE ARRAY GP 100V 200MA SOT563
BAV99W/DG/B3F
BAV99W/DG/B3F
Nexperia USA Inc.
DIODE ARRAY GP 100V 150MA SC70
BAV99-QR
BAV99-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T33A-M3/5B
SM6T33A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T15CAHM3_A/I
SM6T15CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T220CAHM3_A/I
SM6T220CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T33A-M3/9AT
SM15T33A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM15T33AHE3/57T
SM15T33AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM15T6V8AHM3/H
SM15T6V8AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
BZX84B6V8-HE3-08
BZX84B6V8-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 300MW SOT23-3
BZX384C5V6-E3-08
BZX384C5V6-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 200MW SOD323
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84C62-G3-18
BZX84C62-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3