BYQ28E-200HE3/45
  • Share:

Vishay General Semiconductor - Diodes Division BYQ28E-200HE3/45

Manufacturer No:
BYQ28E-200HE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY GP 200V 5A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28E-200HE3/45 is a dual common cathode ultrafast rectifier diode array produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast recovery times and high current handling. The device is packaged in a TO-220AB case, which is RoHS-compliant and meets UL 94 V-0 flammability ratings. It is suitable for various industrial and automotive applications where reliability and efficiency are critical.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM200V
Maximum Average Forward Rectified Current at TC = 100 °CIF(AV)5.0 A per diodeA
Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM55A
Reverse Recovery Timetrr25 nsns
Forward Voltage DropVF0.895V
Maximum Junction TemperatureTJ max.150°C
Thermal Resistance (Junction to Ambient)RθJA50°C/W
Thermal Resistance (Junction to Case)RθJC4.5°C/W

Key Features

  • Ultrafast recovery time of 25 ns, making it suitable for high-frequency applications.
  • Dual common cathode configuration in a TO-220AB package.
  • High peak forward surge current of 55 A for transient protection.
  • Low forward voltage drop of 0.895 V, reducing power losses.
  • RoHS-compliant and meets UL 94 V-0 flammability ratings.
  • Matt tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

  • Power supplies and DC/DC converters.
  • Freewheeling diodes and polarity protection.
  • Industrial and automotive applications requiring high reliability and efficiency.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYQ28E-200HE3/45? The maximum repetitive peak reverse voltage is 200 V.
  2. What is the maximum average forward rectified current per diode at TC = 100 °C? The maximum average forward rectified current per diode is 5.0 A.
  3. What is the peak forward surge current of the BYQ28E-200HE3/45? The peak forward surge current is 55 A.
  4. What is the reverse recovery time of this diode? The reverse recovery time is 25 ns.
  5. What is the forward voltage drop of the BYQ28E-200HE3/45? The forward voltage drop is 0.895 V.
  6. What is the maximum junction temperature of this component? The maximum junction temperature is 150 °C.
  7. Is the BYQ28E-200HE3/45 RoHS-compliant? Yes, it is RoHS-compliant.
  8. What type of package does the BYQ28E-200HE3/45 come in? It comes in a TO-220AB package.
  9. What are some common applications for the BYQ28E-200HE3/45? Common applications include power supplies, DC/DC converters, freewheeling diodes, and polarity protection.
  10. What is the thermal resistance from junction to ambient for this diode? The thermal resistance from junction to ambient is 50 °C/W.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
244

Please send RFQ , we will respond immediately.

Same Series
BYQ28E-200-E3/45
BYQ28E-200-E3/45
DIODE ARRAY GP 200V 5A TO220AB
BYQ28E-100-E3/45
BYQ28E-100-E3/45
DIODE ARRAY GP 100V 5A TO220AB
UG10BCT-E3/45
UG10BCT-E3/45
DIODE ARRAY GP 100V 5A TO220AB
UGB10DCT-E3/45
UGB10DCT-E3/45
DIODE ARRAY GP 200V 5A TO263AB
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
DIODE ARRAY GP 150V 5A ITO220AB
UGF10DCT-E3/45
UGF10DCT-E3/45
DIODE ARRAY GP 200V 5A ITO220AB
UGB10BCT-E3/81
UGB10BCT-E3/81
DIODE ARRAY GP 100V 5A TO263AB
UGB10DCT-E3/81
UGB10DCT-E3/81
DIODE ARRAY GP 200V 5A TO263AB
UGB10CCTHE3/81
UGB10CCTHE3/81
DIODE ARRAY GP 150V 5A TO263AB
BYQ28E-100HE3/45
BYQ28E-100HE3/45
DIODE ARRAY GP 100V 5A TO220AB
BYQ28E-150HE3/45
BYQ28E-150HE3/45
DIODE ARRAY GP 150V 5A TO220AB
UG10DCTHE3/45
UG10DCTHE3/45
DIODE ARRAY GP 200V 5A TO220AB

Similar Products

Part Number BYQ28E-200HE3/45 BYQ28E-100HE3/45 BYQ28E-200-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 100 V 200 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 100 V 10 µA @ 200 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BAV 70W H6327
BAV 70W H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
MBRB10100CT
MBRB10100CT
SMC Diode Solutions
DIODE ARRAY SCHOTTKY 100V D2PAK
MBRB2060CT-E3/81
MBRB2060CT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AB
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A ITO220AB
BAS40-05-F2-0000HF
BAS40-05-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 40V 0.2A SOT-23-3
BAW56TA
BAW56TA
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAW 56W H6327
BAW 56W H6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
MBR10100CD-G1
MBR10100CD-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
BAS16VY/ZLX
BAS16VY/ZLX
Nexperia USA Inc.
DIODE ARRAY GEN PURP 100V SOT363
BAW56W/DG/B3X
BAW56W/DG/B3X
Nexperia USA Inc.
DIODE SWITCHING SOT363
BAT54AHYT116
BAT54AHYT116
Rohm Semiconductor
30V, 200MA, SOT-23, ANODE COMMON

Related Product By Brand

SM6T68CA-M3/5B
SM6T68CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T30CA-M3/52
SM6T30CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T220CAHM3_A/H
SM6T220CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T22CAHM3_A/H
SM6T22CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM15T33CAHM3_A/H
SM15T33CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
BAT54C-E3-08
BAT54C-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAS21-E3-18
BAS21-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N4002GPEHE3/73
1N4002GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
BZX84C10-E3-08
BZX84C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3