BYQ28E-200HE3/45
  • Share:

Vishay General Semiconductor - Diodes Division BYQ28E-200HE3/45

Manufacturer No:
BYQ28E-200HE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY GP 200V 5A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28E-200HE3/45 is a dual common cathode ultrafast rectifier diode array produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast recovery times and high current handling. The device is packaged in a TO-220AB case, which is RoHS-compliant and meets UL 94 V-0 flammability ratings. It is suitable for various industrial and automotive applications where reliability and efficiency are critical.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM200V
Maximum Average Forward Rectified Current at TC = 100 °CIF(AV)5.0 A per diodeA
Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM55A
Reverse Recovery Timetrr25 nsns
Forward Voltage DropVF0.895V
Maximum Junction TemperatureTJ max.150°C
Thermal Resistance (Junction to Ambient)RθJA50°C/W
Thermal Resistance (Junction to Case)RθJC4.5°C/W

Key Features

  • Ultrafast recovery time of 25 ns, making it suitable for high-frequency applications.
  • Dual common cathode configuration in a TO-220AB package.
  • High peak forward surge current of 55 A for transient protection.
  • Low forward voltage drop of 0.895 V, reducing power losses.
  • RoHS-compliant and meets UL 94 V-0 flammability ratings.
  • Matt tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

  • Power supplies and DC/DC converters.
  • Freewheeling diodes and polarity protection.
  • Industrial and automotive applications requiring high reliability and efficiency.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYQ28E-200HE3/45? The maximum repetitive peak reverse voltage is 200 V.
  2. What is the maximum average forward rectified current per diode at TC = 100 °C? The maximum average forward rectified current per diode is 5.0 A.
  3. What is the peak forward surge current of the BYQ28E-200HE3/45? The peak forward surge current is 55 A.
  4. What is the reverse recovery time of this diode? The reverse recovery time is 25 ns.
  5. What is the forward voltage drop of the BYQ28E-200HE3/45? The forward voltage drop is 0.895 V.
  6. What is the maximum junction temperature of this component? The maximum junction temperature is 150 °C.
  7. Is the BYQ28E-200HE3/45 RoHS-compliant? Yes, it is RoHS-compliant.
  8. What type of package does the BYQ28E-200HE3/45 come in? It comes in a TO-220AB package.
  9. What are some common applications for the BYQ28E-200HE3/45? Common applications include power supplies, DC/DC converters, freewheeling diodes, and polarity protection.
  10. What is the thermal resistance from junction to ambient for this diode? The thermal resistance from junction to ambient is 50 °C/W.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
244

Please send RFQ , we will respond immediately.

Same Series
BYQ28E-150-E3/45
BYQ28E-150-E3/45
DIODE ARRAY GP 150V 5A TO220AB
UG10BCT-E3/45
UG10BCT-E3/45
DIODE ARRAY GP 100V 5A TO220AB
UGB10BCT-E3/45
UGB10BCT-E3/45
DIODE ARRAY GP 100V 5A TO263AB
UGB10CCT-E3/45
UGB10CCT-E3/45
DIODE ARRAY GP 150V 5A TO263AB
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
DIODE ARRAY GP 150V 5A ITO220AB
BYQ28EB-150-E3/81
BYQ28EB-150-E3/81
DIODE ARRAY GP 150V 5A TO263AB
BYQ28EB-200-E3/81
BYQ28EB-200-E3/81
DIODE ARRAY GP 200V 5A TO263AB
UGB10BCT-E3/81
UGB10BCT-E3/81
DIODE ARRAY GP 100V 5A TO263AB
UGB10CCT-E3/81
UGB10CCT-E3/81
DIODE ARRAY GP 150V 5A TO263AB
BYQ28E-100HE3/45
BYQ28E-100HE3/45
DIODE ARRAY GP 100V 5A TO220AB
BYQ28E-200HE3/45
BYQ28E-200HE3/45
DIODE ARRAY GP 200V 5A TO220AB
UG10DCTHE3/45
UG10DCTHE3/45
DIODE ARRAY GP 200V 5A TO220AB

Similar Products

Part Number BYQ28E-200HE3/45 BYQ28E-100HE3/45 BYQ28E-200-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 100 V 200 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 100 V 10 µA @ 200 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STPS30120CT
STPS30120CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 120V TO220
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAS21VD,165
BAS21VD,165
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAT54V-TP
BAT54V-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT563
STTH16L06CT
STTH16L06CT
STMicroelectronics
DIODE ARRAY GP 600V 10A TO220AB
BAS21S RFG
BAS21S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
BAV199DW-TP
BAV199DW-TP
Micro Commercial Co
DIODE RECT 85V 160MA SOT363
STPS20150CG
STPS20150CG
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
MUR3060WT
MUR3060WT
onsemi
DIODE ARRAY GP 600V 15A TO247
BAW56SB6327XT
BAW56SB6327XT
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
MURD620CTH
MURD620CTH
onsemi
DIODE GEN PURPOSE
BAS40-05/ZLR
BAS40-05/ZLR
NXP USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT23

Related Product By Brand

SM15T33A-M3/9AT
SM15T33A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T7V5AHM3/I
SM15T7V5AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
SM6T30CAHM3/I
SM6T30CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
BAV99-HE3-08
BAV99-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 150MA SOT23
MURD620CTTR
MURD620CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 3A DPAK
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX384B7V5-HE3-08
BZX384B7V5-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 200MW SOD323
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84C68-HE3-08
BZX84C68-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 68V 300MW SOT23-3
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX384B11-G3-18
BZX384B11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323