BYQ28E-150-E3/45
  • Share:

Vishay General Semiconductor - Diodes Division BYQ28E-150-E3/45

Manufacturer No:
BYQ28E-150-E3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY GP 150V 5A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28E-150-E3/45 is a dual common cathode ultrafast rectifier diode array produced by Vishay General Semiconductor - Diodes Division. This component is part of Vishay's extensive portfolio of rectifiers, known for their high performance and reliability in various applications. The BYQ28E-150-E3/45 is designed to meet the demands of industrial, automotive, and consumer markets, offering fast recovery times and high current handling capabilities.

Key Specifications

Parameter Value
Maximum Repetitive Peak Reverse Voltage (VRRM) 150 V
Maximum DC Blocking Voltage (VDC) 150 V
Maximum Average Forward Rectified Current (IF(AV)) per Diode 5 A
Peak Forward Surge Current (IFSM) 55 A (8.3 ms single half sine-wave)
Reverse Recovery Time (trr) 25 ns
Reverse Leakage Current at Vr 10 μA @ 150 V
Forward Voltage (Vf) at If 1.1 V @ 5 A
Operating Junction Temperature Range -40°C to +150°C
Package/Case TO-220-3
Mounting Type Through Hole
Qualification AEC-Q101

Key Features

  • Ultrafast Recovery Time: The BYQ28E-150-E3/45 features a fast recovery time of 25 ns, making it suitable for high-frequency applications.
  • High Current Handling: With a maximum average forward rectified current of 5 A per diode, this component is ideal for applications requiring high current rectification.
  • Low Forward Voltage: The diode has a low forward voltage drop of 1.1 V at 5 A, reducing power losses and improving efficiency.
  • High Temperature Operation: The component can operate over a wide junction temperature range from -40°C to +150°C.
  • Robust Construction: The TO-220-3 package and through-hole mounting ensure reliable and durable performance.
  • AEC-Q101 Qualified: This diode meets the AEC-Q101 standard, making it suitable for automotive applications.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust construction.
  • Industrial Power Supplies: Ideal for use in industrial power supplies, inverters, and DC-DC converters due to its high current handling and fast recovery time.
  • Consumer Electronics: Used in consumer electronics for rectification, polarity protection, and signal switching applications.
  • High-Frequency Applications: The ultrafast recovery time makes it suitable for high-frequency switching applications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYQ28E-150-E3/45?

    The maximum repetitive peak reverse voltage (VRRM) is 150 V.

  2. What is the maximum average forward rectified current per diode?

    The maximum average forward rectified current (IF(AV)) per diode is 5 A.

  3. What is the reverse recovery time of the BYQ28E-150-E3/45?

    The reverse recovery time (trr) is 25 ns.

  4. What is the operating junction temperature range of the BYQ28E-150-E3/45?

    The operating junction temperature range is -40°C to +150°C.

  5. Is the BYQ28E-150-E3/45 qualified for automotive applications?
  6. What is the package type of the BYQ28E-150-E3/45?

    The package type is TO-220-3.

  7. What is the forward voltage drop at 5 A?

    The forward voltage drop (Vf) at 5 A is 1.1 V.

  8. What is the peak forward surge current rating?

    The peak forward surge current (IFSM) is 55 A (8.3 ms single half sine-wave).

  9. What is the reverse leakage current at 150 V?

    The reverse leakage current at 150 V is 10 μA.

  10. Is the BYQ28E-150-E3/45 suitable for high-frequency applications?

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 150 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

$0.52
1,647

Please send RFQ , we will respond immediately.

Same Series
BYQ28E-200-E3/45
BYQ28E-200-E3/45
DIODE ARRAY GP 200V 5A TO220AB
BYQ28E-150-E3/45
BYQ28E-150-E3/45
DIODE ARRAY GP 150V 5A TO220AB
UG10CCT-E3/45
UG10CCT-E3/45
DIODE ARRAY GP 150V 5A TO220AB
UGB10BCT-E3/45
UGB10BCT-E3/45
DIODE ARRAY GP 100V 5A TO263AB
UGF10BCT-E3/45
UGF10BCT-E3/45
DIODE ARRAY GP 100V 5A ITO220AB
UGF10DCT-E3/45
UGF10DCT-E3/45
DIODE ARRAY GP 200V 5A ITO220AB
BYQ28EB-100-E3/81
BYQ28EB-100-E3/81
DIODE ARRAY GP 100V 5A TO263AB
BYQ28EB-150-E3/81
BYQ28EB-150-E3/81
DIODE ARRAY GP 150V 5A TO263AB
BYQ28EB-200-E3/81
BYQ28EB-200-E3/81
DIODE ARRAY GP 200V 5A TO263AB
UGB10CCTHE3/81
UGB10CCTHE3/81
DIODE ARRAY GP 150V 5A TO263AB
BYQ28E-150HE3/45
BYQ28E-150HE3/45
DIODE ARRAY GP 150V 5A TO220AB
UG10DCTHE3/45
UG10DCTHE3/45
DIODE ARRAY GP 200V 5A TO220AB

Similar Products

Part Number BYQ28E-150-E3/45 BYQ28EF-150-E3/45 BYQ28E-150HE3/45 BYQ28E-100-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 150 V 100 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 150 V 10 µA @ 150 V 10 µA @ 150 V 10 µA @ 100 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3 TO-220-3
Supplier Device Package TO-220-3 ITO-220AB TO-220-3 TO-220-3

Related Product By Categories

BAS40-04T-7-F
BAS40-04T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
MMBD2835LT1G
MMBD2835LT1G
onsemi
DIODE ARRAY GP 35V 100MA SOT23-3
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
MBRD640CTT4G
MBRD640CTT4G
onsemi
DIODE ARRAY SCHOTTKY 40V 3A DPAK
BAS21S RFG
BAS21S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAV70LT1
BAV70LT1
onsemi
DIODE SWITCH DUAL CC 70V SOT23
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS 40-05 B5003
BAS 40-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAT54A-13-F-31
BAT54A-13-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAV99-QR
BAV99-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T220CA-E3/52
SM6T220CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T24CAHM3_A/I
SM6T24CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM15T15AHM3_A/I
SM15T15AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM6T39AHE3/52
SM6T39AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
1N4002GPHE3/54
1N4002GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
1N4007GPHE3/54
1N4007GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84B3V0-G3-18
BZX84B3V0-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 300MW SOT23-3
BZX84B11-G3-08
BZX84B11-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 300MW SOT23-3
BZX84B6V2-G3-08
BZX84B6V2-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW SOT23-3