BYQ28EB-200-E3/81
  • Share:

Vishay General Semiconductor - Diodes Division BYQ28EB-200-E3/81

Manufacturer No:
BYQ28EB-200-E3/81
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 5A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28EB-200-E3/81 is a dual, ultra-fast, epitaxial rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for use as output rectifiers in high-frequency switched-mode power supplies. Known for its rugged and reliable performance, it is a critical component in various power management and conversion systems.

Key Specifications

Parameter Value
Part Number BYQ28EB-200-E3/81
Manufacturer Vishay General Semiconductor - Diodes Division
Reverse Voltage (Vr) 200V
Forward Voltage (Vf) 1.1V (typical)
Reverse Leakage Current (Ir) 10uA (maximum at 200V, 125°C)
Forward Current (If) 14A (average, per diode)
Reverse Recovery Time (Trr) 25ns (typical)
Operating Temperature Range -40°C to 150°C
Package TO-263AB

Key Features

  • Ultra-fast Recovery Time: With a typical reverse recovery time of 25ns, this diode is suitable for high-frequency applications.
  • High Current Capability: Each diode can handle an average forward current of 14A, making it suitable for high-power applications.
  • Rugged Construction: The BYQ28EB-200-E3/81 is known for its rugged and reliable performance, ensuring long-term stability in demanding environments.
  • Wide Operating Temperature Range: The component operates effectively over a temperature range of -40°C to 150°C, making it versatile for various applications.

Applications

  • High-Frequency Switched-Mode Power Supplies: Ideal for use as output rectifiers in high-frequency SMPS due to its ultra-fast recovery time.
  • Power Management Systems: Used in various power management and conversion systems where high current and fast switching are required.
  • Automotive Systems: Suitable for automotive applications due to its rugged construction and wide operating temperature range.
  • Industrial Power Supplies: Used in industrial power supplies where reliability and high performance are critical.

Q & A

  1. What is the reverse voltage rating of the BYQ28EB-200-E3/81 diode?

    The reverse voltage rating of the BYQ28EB-200-E3/81 diode is 200V.

  2. What is the typical forward voltage drop of this diode?

    The typical forward voltage drop of the BYQ28EB-200-E3/81 diode is 1.1V.

  3. What is the maximum reverse leakage current at 200V and 125°C?

    The maximum reverse leakage current at 200V and 125°C is 10uA.

  4. What is the average forward current rating per diode?

    The average forward current rating per diode is 14A.

  5. What is the typical reverse recovery time of this diode?

    The typical reverse recovery time of the BYQ28EB-200-E3/81 diode is 25ns.

  6. What is the operating temperature range of this component?

    The operating temperature range of the BYQ28EB-200-E3/81 diode is -40°C to 150°C.

  7. In what package is the BYQ28EB-200-E3/81 diode available?

    The BYQ28EB-200-E3/81 diode is available in the TO-263AB package.

  8. What are some common applications of this diode?

    Common applications include high-frequency switched-mode power supplies, power management systems, automotive systems, and industrial power supplies.

  9. Why is the BYQ28EB-200-E3/81 diode considered rugged?

    The BYQ28EB-200-E3/81 diode is considered rugged due to its ability to operate over a wide temperature range and its high reliability in demanding environments.

  10. Who is the manufacturer of the BYQ28EB-200-E3/81 diode?

    The manufacturer of the BYQ28EB-200-E3/81 diode is Vishay General Semiconductor - Diodes Division.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:-40°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
0 Remaining View Similar

In Stock

$0.76
1,191

Please send RFQ , we will respond immediately.

Same Series
BYQ28E-200-E3/45
BYQ28E-200-E3/45
DIODE ARRAY GP 200V 5A TO220AB
UG10DCT-E3/45
UG10DCT-E3/45
DIODE ARRAY GP 200V 5A TO220AB
BYQ28E-100-E3/45
BYQ28E-100-E3/45
DIODE ARRAY GP 100V 5A TO220AB
UG10CCT-E3/45
UG10CCT-E3/45
DIODE ARRAY GP 150V 5A TO220AB
UGB10BCT-E3/45
UGB10BCT-E3/45
DIODE ARRAY GP 100V 5A TO263AB
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
DIODE ARRAY GP 150V 5A ITO220AB
BYQ28EF-200-E3/45
BYQ28EF-200-E3/45
DIODE ARRAY GP 200V 5A ITO220AB
UGF10BCT-E3/45
UGF10BCT-E3/45
DIODE ARRAY GP 100V 5A ITO220AB
UGB10DCT-E3/81
UGB10DCT-E3/81
DIODE ARRAY GP 200V 5A TO263AB
BYQ28E-200HE3/45
BYQ28E-200HE3/45
DIODE ARRAY GP 200V 5A TO220AB
UG10BCTHE3/45
UG10BCTHE3/45
DIODE ARRAY GP 100V 5A TO220AB
UG10DCTHE3/45
UG10DCTHE3/45
DIODE ARRAY GP 200V 5A TO220AB

Similar Products

Part Number BYQ28EB-200-E3/81 BYQ28EB-100-E3/81
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 100 V
Current - Average Rectified (Io) (per Diode) 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 5 A 1.1 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 100 V
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK) TO-263AB (D²PAK)

Related Product By Categories

BAS40AW_R1_00001
BAS40AW_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
BAW56-HF
BAW56-HF
Comchip Technology
DIODE SWITCHING COMMON ANODE 70V
BAS40-06-E3-08
BAS40-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
STPS10170CB-TR
STPS10170CB-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V DPAK
BAS21S RFG
BAS21S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAS70-04W-AQ
BAS70-04W-AQ
Diotec Semiconductor
SchottkyD, 70V, 0.07A
BAW56TA
BAW56TA
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAV70LT1
BAV70LT1
onsemi
DIODE SWITCH DUAL CC 70V SOT23
MUR3020PTG
MUR3020PTG
onsemi
DIODE ARRAY GP 200V 15A SOT93
BAV99_S00Z
BAV99_S00Z
onsemi
DIODE HI COND 70V 200MA SOT-23
STPS10170CB
STPS10170CB
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V DPAK

Related Product By Brand

SM6T150A-E3/5B
SM6T150A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM15T12A-E3/9AT
SM15T12A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T18CAHM3_A/I
SM15T18CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM6T39CAHE3/5B
SM6T39CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T33CAHE3/57T
SM15T33CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
BAS70-06-E3-08
BAS70-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
MBR10100CT-E3/45
MBR10100CT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
1N4148WS-HE3-18
1N4148WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N5406GP-E3/54
1N5406GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3