Overview
The SM6T12A-E3/5B is a Transient Voltage Suppressor (TVS) diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the SM6T series, designed to protect sensitive electronic equipment from voltage transients and electrostatic discharges. The SM6T12A-E3/5B is particularly suited for applications requiring high reliability and stability in various environments, including automotive, industrial, consumer, and telecommunication sectors.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Pulse Power Dissipation (10/1000 μs) | 600 W | W |
| Stand-off Voltage (VWM) | 10.2 V to 12.6 V | V |
| Breakdown Voltage (VBR) | 12.8 V to 15.8 V | V |
| Peak Pulse Current (10/1000 μs) | See datasheet for specific values | A |
| Power Dissipation on Infinite Heatsink | 5.0 W | W |
| Peak Forward Surge Current (10 ms single half sine-wave) | 100 A | A |
| Operating Junction and Storage Temperature Range | -65 to +150 °C | °C |
| Package Type | SMB (DO-214AA) | - |
| Lead Finishing | Matte tin plated leads | - |
| Compliance | UL94 V-0, J-STD-020 MSL level 1, J-STD-002, JESD 22-B102 | - |
Key Features
- Low profile package ideal for automated placement
- Glass passivated chip junction for enhanced reliability
- Available in unidirectional and bidirectional configurations
- High peak pulse power capability of 600 W with a 10/1000 μs waveform
- Excellent clamping capability and low inductance
- Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
- AEC-Q101 qualified for automotive applications
- Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C
- High junction temperature capability up to 150 °C
Applications
The SM6T12A-E3/5B is used to protect sensitive electronics against voltage transients induced by inductive load switching and lightning. It is suitable for various applications including:
- Consumer electronics
- Computer systems
- Industrial equipment
- Automotive systems
- Telecommunication devices
- Signal lines of sensor units
Q & A
- What is the peak pulse power dissipation of the SM6T12A-E3/5B?
The peak pulse power dissipation is 600 W with a 10/1000 μs waveform.
- What are the stand-off and breakdown voltages for this component?
The stand-off voltage (VWM) ranges from 10.2 V to 12.6 V, and the breakdown voltage (VBR) ranges from 12.8 V to 15.8 V.
- Is the SM6T12A-E3/5B available in both unidirectional and bidirectional configurations?
- What is the maximum operating junction temperature for this component?
The maximum operating junction temperature is 150 °C.
- Does the SM6T12A-E3/5B meet any specific industry standards?
- What is the package type of the SM6T12A-E3/5B?
The package type is SMB (DO-214AA).
- Is the SM6T12A-E3/5B suitable for automotive applications?
- What is the leakage current of the SM6T12A-E3/5B at different temperatures?
The leakage current is 0.2 μA at 25 °C and 1 μA at 85 °C.
- Can the SM6T12A-E3/5B protect against electrostatic discharges?
- What are some typical applications for the SM6T12A-E3/5B?
