Overview
The SZESD8351HT1G is an ESD protection diode from onsemi, designed to protect high-speed data lines from electrostatic discharge (ESD). This device is part of the ESD8351 series, which is known for its ultra-low capacitance and low ESD clamping voltage, making it an ideal solution for voltage-sensitive high-speed data lines. The SZESD8351HT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | I/O Pin to GND | - | - | 3.3 | V |
| Breakdown Voltage | VBR | IT = 1 mA, I/O Pin to GND | 5.5 | 7.0 | 7.8 | V |
| Reverse Leakage Current | IR | VRWM = 3.3 V, I/O Pin to GND | - | - | 500 nA | A |
| Holding Reverse Voltage | VHOLD | I/O Pin to GND | - | - | 1.15 | V |
| Holding Reverse Current | IHOLD | I/O Pin to GND | - | - | 20 mA | A |
| Dynamic Resistance | RDYN | - | - | - | 0.62 Ω | Ω |
| Maximum Peak Pulse Current | IPP | - | - | - | 16 A | A |
| Clamping Voltage @ IPP | VC | IPP = 16 A | - | - | 11.2 V | V |
| Junction Capacitance | CJ | VR = 0 V, f = 1 MHz | - | - | 0.55 pF | pF |
Key Features
- Low Capacitance (0.55 pF Max, I/O to GND)
- Protection for IEC 61000-4-2 (Level 4) and ISO 10605 standards
- Low ESD Clamping Voltage
- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-free, Halogen Free/BFR Free and RoHS Compliant
Applications
- USB 2.0
- eSATA
- USB 3.0 SS
- DisplayPort
Q & A
- What is the primary function of the SZESD8351HT1G? The primary function of the SZESD8351HT1G is to protect high-speed data lines from electrostatic discharge (ESD).
- What are the key features of the SZESD8351HT1G? Key features include low capacitance, low ESD clamping voltage, and compliance with IEC 61000-4-2 (Level 4) and ISO 10605 standards.
- What is the maximum reverse working voltage of the SZESD8351HT1G? The maximum reverse working voltage is 3.3 V.
- What is the breakdown voltage of the SZESD8351HT1G? The breakdown voltage ranges from 5.5 V to 7.8 V at a test current of 1 mA.
- Is the SZESD8351HT1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the maximum peak pulse current the SZESD8351HT1G can handle? The maximum peak pulse current is 16 A.
- What is the clamping voltage at the maximum peak pulse current? The clamping voltage at 16 A is 11.2 V.
- Can the SZESD8351HT1G be used for HDMI applications? No, the SZESD8351HT1G should not be used for HDMI applications due to potential latch-up issues; instead, ESD8104 or ESD8040 should be used.
- Is the SZESD8351HT1G RoHS compliant? Yes, the device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the junction capacitance of the SZESD8351HT1G? The junction capacitance is 0.55 pF at 1 MHz.
