Overview
The SZESD8351XV2T1G is an ESD (Electrostatic Discharge) protection diode manufactured by onsemi. This device is specifically designed to protect high-speed data lines from ESD events, making it an ideal solution for voltage-sensitive applications. The SZESD8351XV2T1G features ultra-low capacitance and low ESD clamping voltage, ensuring minimal impact on the signal integrity of high-speed data lines.
Key Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | I/O Pin to GND | 3.3 | 3.7 | V | |
| Breakdown Voltage | VBR | IT = 1 mA, I/O Pin to GND | 5.5 | 7.8 | V | |
| Maximum Reverse Leakage Current | IR | VRWM = 3.3 V, I/O Pin to GND | 500 nA | |||
| Holding Reverse Voltage | VHOLD | I/O Pin to GND | 1.15 | V | ||
| Holding Reverse Current | IHOLD | I/O Pin to GND | 20 | mA | ||
| Dynamic Resistance | RDYN | 0.59 | 0.62 | Ω | ||
| Maximum Peak Pulse Current | IPP | 8/20 μs @ TA = 25°C | 5.0 | A | ||
| Clamping Voltage @ IPP | VC | IPP = 5 A, tp = 8 x 20 μs | 8.2 | V | ||
| Junction Capacitance | CJ | VR = 0 V, f = 1 MHz | 0.55 | pF |
Key Features
- Low Capacitance: Maximum of 0.55 pF (I/O to GND), ensuring minimal impact on high-speed data lines.
- ESD Protection Standards: Compliant with IEC 61000-4-2 (Level 4) and ISO 10605.
- Low ESD Clamping Voltage: Effective in protecting voltage-sensitive high-speed data lines.
- Automotive and Industrial Compliance: SZ prefix indicates AEC-Q101 qualification and PPAP capability, suitable for automotive and other applications requiring unique site and control change requirements.
- Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- USB 2.0: Low-speed, full-speed, and high-speed interfaces.
- USB 3.0 SS: SuperSpeed interfaces.
- eSATA: External Serial Advanced Technology Attachment.
- DisplayPort: High-speed display interfaces.
Q & A
- What is the primary function of the SZESD8351XV2T1G?
The primary function is to protect high-speed data lines from electrostatic discharge (ESD) events. - What are the key specifications of the SZESD8351XV2T1G?
Key specifications include a reverse working voltage of 3.3 V, breakdown voltage of 5.5-7.8 V, and a maximum peak pulse current of 5.0 A. - Is the SZESD8351XV2T1G compliant with any ESD protection standards?
Yes, it is compliant with IEC 61000-4-2 (Level 4) and ISO 10605. - What is the maximum capacitance of the SZESD8351XV2T1G?
The maximum capacitance is 0.55 pF (I/O to GND). - Is the SZESD8351XV2T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable. - What are the typical applications of the SZESD8351XV2T1G?
Typical applications include USB 2.0, USB 3.0 SS, eSATA, and DisplayPort. - Can the SZESD8351XV2T1G be used for HDMI applications?
No, it is not recommended for HDMI applications due to potential latch-up issues; instead, use ESD8104 or ESD8040. - What is the operating junction temperature range of the SZESD8351XV2T1G?
The operating junction temperature range is -55°C to +125°C. - Is the SZESD8351XV2T1G environmentally friendly?
Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the dynamic resistance of the SZESD8351XV2T1G?
The dynamic resistance is approximately 0.59-0.62 Ω.
